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    1000V, NPN Search Results

    1000V, NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
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    1000V, NPN Price and Stock

    Mencom Corporation MDC-4FP-5M-R-NPN

    MDC - NPN Lighted - Cordset - 4 Pole - Female Right Angle - 5M - 4A - Yellow - PVC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com MDC-4FP-5M-R-NPN
    • 1 $37.32
    • 10 $32.69
    • 100 $28.99
    • 1000 $28.23
    • 10000 $28.23
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    Mencom Corporation MDC-4FP-2M-R-NPN

    MDC - NPN Lighted - Cordset - 4 Pole - Female Right Angle - 2M - 4A - Yellow - PVC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com MDC-4FP-2M-R-NPN
    • 1 $33.31
    • 10 $31.1
    • 100 $26.27
    • 1000 $25.16
    • 10000 $25.16
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    Mencom Corporation MDC-3FP-5M-R-NPN

    MDC - NPN Lighted - Cordset - 3 Pole - Female Right Angle - 5M - 4A - Yellow - PVC - Nickel Plated Brass
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com MDC-3FP-5M-R-NPN
    • 1 $48.29
    • 10 $41.81
    • 100 $37.35
    • 1000 $36.79
    • 10000 $36.79
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    SCS 1000V-6X750

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 1000V-6X750
    • 1 $288.76
    • 10 $272.38
    • 100 $268.29
    • 1000 $268.29
    • 10000 $268.29
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    Pentair Equipment Protection - Hoffman CUF10-1000V

    CUF Solar Combiner Box 10pr, 19.32x17.32x9.58, Lt Gray, Fiberglass
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com CUF10-1000V
    • 1 $319
    • 10 $300.9
    • 100 $296.39
    • 1000 $296.39
    • 10000 $296.39
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    Find more 1000V, NPN price and stock on Findchips.com

    1000V, NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4050 cmos

    Abstract: 4011 cmos 4011 c-mos ic cmos 4011 IC 4011 CMOS 4081 logic gate circuit diagram 47k ohm potentiometer Pin Diagram of ic 4081 LM311V 2N2222A npn transistor
    Text: LRGAT75F100 1000V 75A LRGAT150F100 1000V 150A ZVS THYRISTOR DUAL MODE IGBT HALF BRIDGE POWER MODULE PRODUCT DESCRIPTION The LRGAT series consists of half bridges designed to be used in Zero Voltage Switching ZVS power converters up to 80KHz operating frequency and 10KW output power.


    Original     		PDF LRGAT75F100 LRGAT150F100 80KHz 400VAC 6160xx1T2300 DIN46 F-33700 4050 cmos 4011 cmos 4011 c-mos ic cmos 4011 IC 4011 CMOS 4081 logic gate circuit diagram 47k ohm potentiometer Pin Diagram of ic 4081 LM311V 2N2222A npn transistor

    Untitled

    Abstract: No abstract text available
    Text: LT1363 70MHz, 1000V/µs Op Amp U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 70MHz Gain Bandwidth 1000V/µs Slew Rate 7.5mA Maximum Supply Current 9nV/√Hz Input Noise Voltage Unity-Gain Stable C-LoadTM Op Amp Drives All Capacitive Loads


    Original     		PDF LT1363 70MHz, 000V/Â 70MHz 350nA LT1364/LT1365

    Transistor C-1364

    Abstract: LT1364 LT1354 LT1359 LT1360 LT1362 LT1363 LT1365CN
    Text: LT1364/LT1365 Dual and Quad 70MHz, 1000V/µs Op Amps U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 70MHz Gain Bandwidth 1000V/µs Slew Rate 7.5mA Maximum Supply Current per Amplifier Unity-Gain Stable C-LoadTM Op Amp Drives All Capacitive Loads


    Original     		PDF LT1364/LT1365 70MHz, 70MHz 350nA LT1363 LT1361/LT1362 50MHz, LT1364/LT1365, Transistor C-1364 LT1364 LT1354 LT1359 LT1360 LT1362 LT1363 LT1365CN

    Transistor C-1364

    Abstract: No abstract text available
    Text: LT1364/LT1365 Dual and Quad 70MHz, 1000V/µs Op Amps U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 70MHz Gain Bandwidth 1000V/µs Slew Rate 7.5mA Maximum Supply Current per Amplifier Unity-Gain Stable C-LoadTM Op Amp Drives All Capacitive Loads


    Original     		PDF LT1364/LT1365 70MHz, 000V/Â 70MHz 350nA LT1363 Transistor C-1364

    Transistor C-1364

    Abstract: LT1365CN LT1364 LT1364CS8 LT1354 LT1359 LT1360 LT1362 LT1363 LT1364CN8
    Text: LT1364/LT1365 Dual and Quad 70MHz, 1000V/µs Op Amps U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 70MHz Gain-Bandwidth 1000V/µs Slew Rate 7.5mA Maximum Supply Current per Amplifier Unity Gain Stable C-LoadTM Op Amp Drives All Capacitive Loads


    Original     		PDF LT1364/LT1365 70MHz, 70MHz 350nA Transistor C-1364 LT1365CN LT1364 LT1364CS8 LT1354 LT1359 LT1360 LT1362 LT1363 LT1364CN8

    1363

    Abstract: C 1363 Ca LT1354 LT1359 LT1360 LT1363 LT1363CN8
    Text: LT1363 70MHz, 1000V/µs Op Amp U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 70MHz Gain Bandwidth 1000V/µs Slew Rate 7.5mA Maximum Supply Current 9nV/√Hz Input Noise Voltage Unity-Gain Stable C-LoadTM Op Amp Drives All Capacitive Loads


    Original     		PDF LT1363 70MHz, 70MHz 350nA LT1364/LT1365 LT1360 50MHz, LT1363, 1363 C 1363 Ca LT1354 LT1359 LT1360 LT1363 LT1363CN8

    transistor 1363

    Abstract: LT1354 LT1359 LT1360 LT1363 LT1363CN8
    Text: LT1363 70MHz, 1000V/µs Op Amp U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 70MHz Gain-Bandwidth 1000V/µs Slew Rate 7.5mA Maximum Supply Current 9nV/√Hz Input Noise Voltage Unity Gain Stable C-LoadTM Op Amp Drives All Capacitive Loads


    Original     		PDF LT1363 70MHz, 70MHz 350nA transistor 1363 LT1354 LT1359 LT1360 LT1363 LT1363CN8

    2SC5264

    Abstract: 2SC5264LS 2079d
    Text: Ordering number:ENN5287A NPN Triple Diffused Planar Silicon Transistor 2SC5264LS Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process.


    Original     		PDF ENN5287A 2SC5264LS 2079D 2SC5264] O-220FI 2SC5264 2SC5264LS 2079d

    ta1238

    Abstract: TA-1238 2SC5304 2SC5304LS
    Text: Ordering number:ENN5883A NPN Triple Diffused Planar Silicon Transistor 2SC5304LS Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process.


    Original     		PDF ENN5883A 2SC5304LS 2079D 2SC5304] O-220FI ta1238 TA-1238 2SC5304 2SC5304LS

    ta1238

    Abstract: TA-1238 2SC5304 EN5883
    Text: Ordering number:EN5883 NPN Triple Diffused Planar Silicon Transistor 2SC5304 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process. unit:mm


    Original     		PDF EN5883 2SC5304 2079B 2SC5304] O-220FI ta1238 TA-1238 2SC5304 EN5883

    2069B

    Abstract: 2SC5420
    Text: Ordering number:EN5762 NPN Triple Diffused Planar Silicon Transistor 2SC5420 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process. unit:mm


    Original     		PDF EN5762 2SC5420 2069B 2SC5420] 2069B 2SC5420

    d 5287

    Abstract: 2SC5264
    Text: Ordering number:ENN5287 NPN Triple Diffused Planar Silicon Transistor 2SC5264 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process. unit:mm


    Original     		PDF ENN5287 2SC5264 2079C 2SC5264] O-220FI-LS 10Ltd. d 5287 2SC5264

    2069B

    Abstract: 2SC5420
    Text: Ordering number:EN5762 NPN Triple Diffused Planar Silicon Transistor 2SC5420 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process. unit:mm


    Original     		PDF EN5762 2SC5420 2069B 2SC5420] 2069B 2SC5420

    NPN Transistor VCEO 1000V

    Abstract: 2SC5420 1000V 20A transistor
    Text: Ordering number : EN5762 NPN Triple Diffused Planar Silicon Transistor 2SC5420 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . • High reliability (Adoption of HVP process). • Adoption of MBIT process.


    Original     		PDF EN5762 2SC5420 2069B-SMP-FD 2SC5420] NPN Transistor VCEO 1000V 2SC5420 1000V 20A transistor

    2N5015S

    Abstract: No abstract text available
    Text: 2N5015S Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		PDF 2N5015S O205AD) 10/20m 1-Aug-02 2N5015S

    Untitled

    Abstract: No abstract text available
    Text: 2N5015SX Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		PDF 2N5015SX O205AD) 10/2Parameter 10/20m 17-Jul-02

    2SC2688

    Abstract: 2SC2688L NPN Transistor VCEO 1000V
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES 1 * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. E-B reverse bias, C=2300pF


    Original     		PDF 2SC2688 2SC2688 2300pF) 50MHz -10mA) O-126 2SC2688L 2SC2688-x-T60-A-K 2SC2688L-x-T60-A-K 2SC2688L NPN Transistor VCEO 1000V

    Untitled

    Abstract: No abstract text available
    Text: 2N5015S Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		PDF 2N5015S O205AD) 10/20Parameter 10/20m 17-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: 2N5015 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		PDF 2N5015 O205AD) 10/25mParameter 10/25m 17-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: 2N5015 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		PDF 2N5015 O205AD) 10/25m 19-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: 2N5015X Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		PDF 2N5015X O205AD) 10/20Parameter 10/20m 17-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: 2N5015S Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		PDF 2N5015S O205AD) 10/20m 19-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: r r \ i m > TECHNOLOGY 70MHz, 1000V/[is O p Am p KIÌTUR6S DCSCMPTIOfl • 70MHz Gain-Bandwidth ■ 1000V/|j.s Slew Rate ■ 7.5mA Maximum Supply Current The LT1363 is a high speed, very high slew rate opera­


    OCR Scan     		PDF 70MHz, 70MHz LT1363 LT1363 700kHz

    541 transistor

    Abstract: LM311V
    Text: LRGAT75F100 1000V 75A ADVANCED R ow er LRGAT150F100 1000V 150A T e c h n o l o g y ZVSTHYRISTOR DUAL MODE IGBT HALF BRIDGE POWER MODULE PRODUCT DESCRIPTION The LRGAT series consists of half bridges designed to be used in Zero Voltage Switching ZVS power


    OCR Scan     		PDF LRGAT75F100 LRGAT150F100 80KHz 400VAC 6160xx1T2300 DIN46 F-33700 541 transistor LM311V