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    10.0330 Search Results

    10.0330 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    27LS03-30/BEA Rochester Electronics 27LS03 - SRAM - Dual marked (8605109EA) Visit Rochester Electronics Buy
    RFB0810-330L Coilcraft Inc General Purpose Inductor, 33uH, 10%, 1 Element, Ferrite-Core, ROHS COMPLIANT Visit Coilcraft Inc
    RFB1010-330L Coilcraft Inc General Purpose Inductor, 33uH, 10%, 1 Element, Ferrite-Core, ROHS COMPLIANT Visit Coilcraft Inc
    RJK0330DPB-01#J0 Renesas Electronics Corporation Silicon N Channel Power MOSFET Power Switching Visit Renesas Electronics Corporation
    UPD703302YGB-XXX-8EU-A Renesas Electronics Corporation 32-bit Microcontrollers (Non Promotion), LQFP, / Visit Renesas Electronics Corporation
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    10.0330 Price and Stock

    Caddock Electronics Inc MP9100-33.0-1-

    RES 33 OHM 1% 100W TO247
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    DigiKey MP9100-33.0-1- Tube 2,236 1
    • 1 $17.84
    • 10 $11.06
    • 100 $7.5625
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    Essentra Components SLP100-330-01

    SNAP LOCK PIN 0.410" NYLON NRTL
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    DigiKey SLP100-330-01 Bulk 1,121 1
    • 1 $0.44
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    • 100 $0.2489
    • 1000 $0.21153
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    DB Roberts SLP100-330-01
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    RAF Electronic Hardware M1003-3005-S-12

    4.5MM RD X 6MM X M3 THD
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    DigiKey M1003-3005-S-12 Bulk 757 1
    • 1 $1.46
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    • 100 $0.8502
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    Bisco Industries M1003-3005-S-12 130
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    Caddock Electronics Inc MP9100-3.30-1-

    RES 3.3 OHM 1% 100W TO247
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    DigiKey MP9100-3.30-1- Tube 645 1
    • 1 $20.76
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    • 100 $9.1625
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    KEMET Corporation SS26V-R100330

    CMC 33MH 1A 2LN TH
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    DigiKey SS26V-R100330 Tray 313 1
    • 1 $3.11
    • 10 $2.266
    • 100 $1.81563
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    Avnet Abacus SS26V-R100330 23 Weeks 350
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    10.0330 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    10.0330 Lapp Group Connector Accessories Mounting Base 10 Housings Original PDF
    1003307 Phoenix Contact ES/LP Original PDF
    100-330J API Delevan RF Inductors - Micro i Ribbon-Lead Inductor - Surface Mount - 100 Original PDF
    100-330K API Delevan RF Inductors - Micro i Ribbon-Lead Inductor - Surface Mount - 100 Original PDF
    100-330M API Delevan RF Inductors - Micro i Ribbon-Lead Inductor - Surface Mount - 100 Original PDF
    100-330N API Delevan RF Inductors - Micro i Ribbon-Lead Inductor - Surface Mount MS21367-3 - 100 Original PDF

    10.0330 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    114-18063

    Abstract: mass air flow sensor pbt-gf30 pbt-GF15 PBT - GF15 connector AMP PBT gf30 connector tyco pbt gf15 komax kappa 220 komax kappa 220 manual AMP PBT - GF15 3 pin Tyco PA66 GF15
    Text: MQS-Umschlag 08.03.2005 13:43 Uhr Seite 1 Catalog 1307999 Issued 3-05 G L O B A L AU TO M OT I V E D I V I S I O N Micro Quadlok Interconnection System MQS-Umschlag 08.03.2005 13:43 Uhr Seite 2 TYCO ELECTRONICS G L O B A L AU TO M OT I V E D I V I S I O N


    Original
    PDF

    AMP superseal 1.0

    Abstract: amp tyco applicator superseal 6473427-1 6437288-5 AMP Superseal 1.5 AMP Superseal 2.8 184-912 7 inch china ipod MQS Interconnection for the Automotive Industry 114-18050
    Text: 1-Cover SUPERSEAL 1.0.qxd 09.06.2008 16:10 Uhr Seite 1 RoHS Ready AMP SUPERSEAL Connectors 1.0 mm System for the Automotive Market SUPERSEDED NOT the LATEST REVISION 1-Cover SUPERSEAL 1.0.qxd 09.06.2008 16:10 Uhr T YCO E L E C T R O N I C S Seite 2 G LO B A L AU TO M OT I V E D I V I S I O N


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    PDF

    RC ladder networks smd

    Abstract: AYWW marking code IC NCV8184 NCV8501
    Text: NCV8184 Micropower 70 mA Low Dropout Tracking Regulator/Line Driver The NCV8184 is a monolithic integrated low dropout tracking voltage regulator designed to provide an adjustable buffered output voltage that closely tracks ±3.0 mV the reference input.


    Original
    PDF NCV8184 NCV8184 751AC NCV8184/D RC ladder networks smd AYWW marking code IC NCV8501

    114-18050

    Abstract: Tyco 3604 AMP Superseal AMP superseal 1.0 2-6447232-3 amp tyco applicator superseal 6437288-1 APPLICATION SPECIFICATION 114-18050 AMP Superseal 1.5 3 pin 114-78011
    Text: 1-Cover SUPERSEAL 1.0.qxd 09.06.2008 16:10 Uhr Seite 1 RoHS Ready AMP SUPERSEAL Connectors 1.0 mm System for the Automotive Market 1-Cover SUPERSEAL 1.0.qxd 09.06.2008 16:10 Uhr T YCO E L E C T R O N I C S Seite 2 G LO B A L AU TO M OT I V E D I V I S I O N


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    PDF

    onsemi 035 1314

    Abstract: RC ladder networks smd NCV8184 NCV8501 65037 62274
    Text: NCV8184 Micropower 70 mA Low Dropout Tracking Regulator/Line Driver The NCV8184 is a monolithic integrated low dropout tracking voltage regulator designed to provide an adjustable buffered output voltage that closely tracks ±3.0 mV the reference input.


    Original
    PDF NCV8184 NCV8184 751AC NCV8184/D onsemi 035 1314 RC ladder networks smd NCV8501 65037 62274

    ha 1452

    Abstract: 10.3814 10.0729 10.3815 112-361 STA-1100 43652 10.1550 101239 10.5022
    Text: EPIC CONNECTORS OLFLEX ® C A BL E “The Perfect Connection” 800-774-3539 www.lappusa.com EPIC® CONNECTORS Rectangular Industrial Connectors: Technical Data Overview 1. Strain Relief: Strain Relief provides a seal between the cable and the connector housing. It may also be


    Original
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    NCV8184

    Abstract: NCV8501
    Text: NCV8184 Micropower 70 mA Low Dropout Tracking Regulator/Line Driver The NCV8184 is a monolithic integrated low dropout tracking voltage regulator designed to provide an adjustable buffered output voltage that closely tracks ±3.0 mV the reference input.


    Original
    PDF NCV8184 NCV8184 751AC NCV8184/D NCV8501

    EPIC ZYLIN R2.5

    Abstract: E75770 HEE18 102041 HA10 HA16 MC20 112102 chromel alumel 309 HDD-24
    Text: EPIC Connectors- Rectangular, Circular and Pin & Sleeve Visit our website for additional information and updates. 225 EPIC® Connectors- Rectangular, Circular and Pin & Sleeve EPIC® Rectangular Connectors EPIC® Rectangular Overview 229 Overview of Housings, Plugs & Receptacles, and Selection Charts


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    8184G

    Abstract: No abstract text available
    Text: NCV8184 Micropower 70 mA Low Dropout Tracking Regulator/Line Driver The NCV8184 is a monolithic integrated low dropout tracking voltage regulator designed to provide an adjustable buffered output voltage that closely tracks ±3.0 mV the reference input.


    Original
    PDF NCV8184 751AC NCV8184/D 8184G

    Untitled

    Abstract: No abstract text available
    Text: NCV8184 Micropower 70 mA Low Dropout Tracking Regulator/Line Driver The NCV8184 is a monolithic integrated low dropout tracking voltage regulator designed to provide an adjustable buffered output voltage that closely tracks ±3.0 mV the reference input.


    Original
    PDF NCV8184 NCV8184 751AC NCV8184/D

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI SEMICONDUCTOR HY5116400 Series 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400 utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide operating


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    PDF HY5116400 1AD02-10-APR93 HY5116400JC HY5116400LJC HY5116400TC HY5116400LTC

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 5 1 1 7 4 0 0 S e r ie s 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5117400 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan
    PDF HY5117400 1AD05-20-MAR94 4b750fifi HY5117400JC HY5117400UC HY5117400TC HY5117400LTC

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI H Y 5 1 1 7 1 0 0 SEMICONDUCTOR Series 16Mx 1-bit CM OS DRAM DESCRIPTION The HY5117100 is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5117100 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan
    PDF HY5117100 1AD04-10-APR93 HY5117100JC HY5117100UC HY5117100TC HY5117100LTC HY5117100RC

    A1HV

    Abstract: OQ11 SLTC
    Text: “H Y U N D A I 11 • M 11 W I I I H Y 5 1 1 8 2 6 0 J 5e r i e s 4 1 1 w n e us« n « A O o ä i i » .u w or* a o o M in o 1M X 16-bit CMOS nDRAM with 2CAS &WPB DESCRIPTION The HY5118260 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118260


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    PDF 16-bit HY5118260 16-bit. 1A016-10-MAY94 GDD3543 HY5118260JC HY5118260SLJC A1HV OQ11 SLTC

    HY5116100

    Abstract: No abstract text available
    Text: HYUNDAI H Y 5 1 1 6 1 0 0 S e r ie s SEMICONDUCTOR 16M X 1-blt CMOS DRAM DESCRIPTION The HY5116100 is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5116100 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


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    PDF HY5116100 1AD01-10-APR93 HY5116100JC HY5116100LJC HY5116100TC HY5116100LTC HY5116100RC

    Untitled

    Abstract: No abstract text available
    Text: ••HYUNDAI SEMICONDUCTOR H Y 5 1 4 4 6 0 _ S e r ie s 256K x 16-blt CMOS DRAM with 2 CAS&WPB PRELIMINARY DESCRIPTION The HY514460 is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access


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    PDF 16-blt HY514460 16-bit 40pin 40/44pln 1AC12-00-APR93 HY514460JC HY514460SUC

    Untitled

    Abstract: No abstract text available
    Text: -HYUNDAI H Y 5 1 1 6 1 6 4 B S e r ie s 1Mx 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5116164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116164B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


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    PDF 16-bit HY5116164B 16-bit. HY5116164B 1ADS7-10-MAY95 HY5116164BJC HY5116164BSLJC HY5116164BTC

    Untitled

    Abstract: No abstract text available
    Text: “HYUNDAI HY51V16164B Series 1M x 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The H Y51V16164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V16164B utilizes Hyundai’s CM O S silicon gate process technology as well as advanced circuit techniques


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    PDF HY51V16164B 16-bit Y51V16164B 16-bit. 42/42pin 4b75DÃ 1AD59-10-MAY95

    wj da11 pin

    Abstract: 22TCW
    Text: •HYUNDAI H Y 5 1 1 6 1 6 0 B S e r ie s 1M X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5116160B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116160B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


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    PDF 16-bit HY5116160B 16-bit. 1AD53-10-MAY95 HY5116160BJC HY5116160BSLJC HY5116160BTC wj da11 pin 22TCW

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HY 514370_Series SEMICONDUCTOR 256K xi6-b# cm os d ra m with 2 w e & w pb PRELIMINARY DESCRIPTION The HY514370 Is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access


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    PDF HY514370 16-bit 400mii 40pin 40/44pin 1AC10-00-APR93 HY514370JC HY514370SLJC

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI SEMICONDUCTOR HY5116410 Series 4M X 4-bit CMOS DRAM with Write-Per-Bit DESCRIPTION The HY5116410 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit with function of Write-Per-Bit. The H Y 5116410 utilizes Hyundai's C M O S silicon gate process technology as well as advanced


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    PDF HY5116410 capa290 1AD03-10-APR93 HY5116410JC HY5116410UC HY5116410TC HY5116410LTC

    HY514260B

    Abstract: HY514260BJC 404Q0 HY514260 514260
    Text: - « H Y U N D A I HY514260B Series 256K x 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY514260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design techniques to achieve fast access


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    PDF HY514260B 16-bit 400mil 40pin 40/44pin 404Q0 X30SC HY514260BJC HY514260 514260

    Untitled

    Abstract: No abstract text available
    Text: HY51V4260B Series HYUNDAI 256Kx 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY51V4260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design techniques to achieve


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    PDF HY51V4260B 256Kx 16-bit 400mil 40pin 40/44pin 0D04273

    Untitled

    Abstract: No abstract text available
    Text: “ H Y U N D A I SEMICONDUCTOR H Y 5 1 4 3 7 0 S e r ie s with 2 w e 256K x i e-bit c m o s d ra m & wpb PRELIMINARY DESCRIPTION The HY514370 Is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access


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    PDF HY514370 16-bit 400mil 40pin 40/44pin 1AC10-00-APR93 4b750Ã HY514370JC