Surface Mount
Abstract: 0909a 472K smd
Text: API_newlayouts_single:APIcatalog_newlayouts 8/27/10 3:19 PM Page 20 R F SERIES 4232 PHENOLIC CORE 250 25 20 220 25 20 180 25 20 165 25 19 135 25 19 120 25 17 200 25 17 180 25 17 140 25 17 120 25 15 110 25 15 100 25 10 90 25 10 0.45 0.50 0.54 0.61 0.68 0.72
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4232R-562F
Surface Mount
0909a
472K smd
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d4242
Abstract: rf107 RF717 RE10261 RF10731 RF10721 RG737 RD717 RD10361 RE267
Text: 412031.K01 STAKON 3/5 3/14/03 10:28 AM Page 9 Terminals ® Nylon Insulated Ring Wire Range Max. Ins. Bolt Hole Wt./Lbs. Per 1000 RD167 RD8-10 RD367 RD8-14 RD717 RD8-516 RD727 RD8-38 RD737 RD8-12 RD757* 200 25 200 25 200 25 200 25 200 25 200 8 8 8 8 8 8
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RD167
RD8-10
RD367
RD8-14
RD717
RD8-516
RD727
RD8-38
RD737
RD8-12
d4242
rf107
RF717
RE10261
RF10731
RF10721
RG737
RD717
RD10361
RE267
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0909a
Abstract: 562F SMD MARKING CODE 221k 09-09A
Text: F SERIES 4232 PHENOLIC CORE 250 25 20 220 25 20 180 25 20 165 25 19 135 25 19 120 25 17 200 25 17 180 25 17 140 25 17 120 25 15 110 25 15 100 25 10 90 25 10 0.45 0.50 0.54 0.61 0.68 0.72 0.76 0.84 0.92 1.06 1.25 1.40 1.50 519 493 474 446 442 410 400 380 363
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11tions
4232R-562F
0909a
562F
SMD MARKING CODE 221k
09-09A
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SST177
Abstract: J174 J175 J176 J177 SST174 SST175 SST176 S6 SOT23-3
Text: J/SST174 Series Siliconix PĆChannel JFETs J174 J175 J176 J177 Product Summary SST174 SST175 SST176 SST177 Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST174 5 to 10 85 -10 25 J/SST175 3 to 6 125 -10 25 J/SST176 1 to 4 250 -10
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J/SST174
SST174
SST175
SST176
SST177
J/SST174
J/SST175
J/SST176
J/SST177
J/SST176,
SST177
J174
J175
J176
J177
SST174
SST175
SST176
S6 SOT23-3
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Untitled
Abstract: No abstract text available
Text: New Product SiZ728DT Vishay Siliconix N-Channel 25 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 25 Channel-2 25 RDS(on) () ID (A) 0.0077 at VGS = 10 V 16a 0.0110 at VGS = 4.5 V 16a 0.0035 at VGS = 10 V 35a 0.0048 at VGS = 4.5 V 35a Qg (Typ.)
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SiZ728DT
2002/95/EC
SiZ728DT-T1-GE3
11-Mar-11
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MAX7044
Abstract: No abstract text available
Text: Si4670DY Vishay Siliconix Dual N-Channel 25-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 25 Channel-2 25 RDS(on) (Ω) 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V ID (A)a, e Qg (Typ.) 8.0
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Si4670DY
2002/95/EC
Si4670DY-T1-E3
Si4670DY-T1-GE3
11-Mar-11
MAX7044
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Si4670DY-T1-GE3
Abstract: No abstract text available
Text: Si4670DY Vishay Siliconix Dual N-Channel 25-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 25 Channel-2 25 RDS(on) (Ω) 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V ID (A)a, e Qg (Typ.) 8.0
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Si4670DY
2002/95/EC
11-Mar-11
Si4670DY-T1-GE3
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si4670
Abstract: Si4670DY-T1-GE3
Text: Si4670DY Vishay Siliconix Dual N-Channel 25-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 25 Channel-2 25 RDS(on) (Ω) 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V ID (A)a, e Qg (Typ.) 8.0
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Si4670DY
2002/95/EC
18-Jul-08
si4670
Si4670DY-T1-GE3
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Untitled
Abstract: No abstract text available
Text: New Product SiZ728DT Vishay Siliconix N-Channel 25 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 25 Channel-2 25 RDS(on) () ID (A) 0.0077 at VGS = 10 V 16a 0.0110 at VGS = 4.5 V 16a 0.0035 at VGS = 10 V 35a 0.0048 at VGS = 4.5 V 35a Qg (Typ.)
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SiZ728DT
2002/95/EC
SiZ728DT-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si4670DY Vishay Siliconix Dual N-Channel 25-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 25 Channel-2 25 RDS(on) (Ω) 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V ID (A)a, e Qg (Typ.) 8.0
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Si4670DY
2002/95/EC
Si4670DY-T1-E3
Si4670DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si4670DY Vishay Siliconix Dual N-Channel 25-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 25 Channel-2 25 RDS(on) (Ω) 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V ID (A)a, e Qg (Typ.) 8.0
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Si4670DY
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product SiZ728DT Vishay Siliconix N-Channel 25 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 25 Channel-2 25 RDS(on) () ID (A) 0.0077 at VGS = 10 V 16a 0.0110 at VGS = 4.5 V 16a 0.0035 at VGS = 10 V 35a 0.0048 at VGS = 4.5 V 35a Qg (Typ.)
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SiZ728DT
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si4670DY Vishay Siliconix Dual N-Channel 25-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 25 Channel-2 25 RDS(on) (Ω) 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V ID (A)a, e Qg (Typ.) 8.0
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Si4670DY
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiZ728DT Vishay Siliconix N-Channel 25 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 25 Channel-2 25 RDS(on) () ID (A) 0.0077 at VGS = 10 V 16a 0.0110 at VGS = 4.5 V 16a 0.0035 at VGS = 10 V 35a 0.0048 at VGS = 4.5 V 35a Qg (Typ.)
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SiZ728DT
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJK1575DPA 150V - 25A - MOS FET High Speed Power Switching R07DS0858EJ0100 Rev.1.00 Jul 27, 2012 Features • Very low on-resistance RDS on = 0.038 typ. (at ID = 12.5 A, VGS = 10 V, Ta = 25 C) Low gate charge Qg = 37 nC typ. (at VDD = 120 V, VGS = 10 V, ID = 25 A, Ta = 25 C)
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RJK1575DPA
R07DS0858EJ0100
PWSN0008DE-A
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tda7492p
Abstract: TDA7492 SZ-LAB-TDA7492P TDA7492P13TR
Text: TDA7492P 25 W + 25 W dual BTL Class-D audio amplifier Features ! 25 W + 25 W continuous output power at THD = 10% with VCC = 20 V and RL = 8 Ω ! Wide range single supply operation 10 - 26 V ! High efficiency (η =90%) ! Four selectable, fixed gain settings of
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TDA7492P
PowerSSO-36
TDA7492P
TDA7492
SZ-LAB-TDA7492P
TDA7492P13TR
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJK2076DPA 200V - 20A - MOS FET High Speed Power Switching R07DS0859EJ0100 Rev.1.00 Jul 27, 2012 Features • Low on-resistance RDS on = 0.068 typ. (at ID = 10 A, VGS = 10 V, Ta = 25C) Very low gate charge Qg = 19 nC typ. (at VDD = 160 V, VGS = 10 V, ID = 20 A, Ta = 25C)
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RJK2076DPA
R07DS0859EJ0100
PWSN0008DE-A
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Untitled
Abstract: No abstract text available
Text: PALCE16V8 PALCE16V8Z COM'L:H-5/7/10/15/25, Q-10/15/25 IND:H-10/25, Q-20/25 COM'L:-25 IND:-12/15/25 PALCE16V8 and PALCE16V8Z Families BEYOND PERFORMANCE EE CMOS Zero-Power 20-Pin Universal Programmable Array Logic DISTINCTIVE CHARACTERISTICS ♦ Pin and function compatible with all 20-pin PAL devices
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PALCE16V8
PALCE16V8Z
H-5/7/10/15/25,
Q-10/15/25
H-10/25,
Q-20/25
PALCE16V8Z
20-Pin
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Untitled
Abstract: No abstract text available
Text: C Xp nm ircuit mcd B Vf Volts MIN TYP 635 3.6 10 10 585 2.2 6.3 563 5.6 635 IfmA T Y P oard Indicators -10 MAX IfmA 2.0 3.0 10 35 10 2.1 3.0 10 35 16 10 2.1 3.0 10 35 1.0 2.0 2.0 1.9 2.4 2.0 25 585 1.0 2.0 2.0 2.4 2.9 2.0 25 565 1.0 2.0 2.0 1.9 2.4 2.0 25
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iP2970
Abstract: palce16v8 programming guide
Text: COM’L: H-5/7/10/15/25, Q-10/15/25 IND: H-10/15/25, Q-20/25 MIL: H-15/20/25 PALCE16V8 Family AdvaM "£o EE CMOS 20-Pin Universal Programmable Array Logic Devices DISTINCTIVE CHARACTERISTICS • ■ ■ Pin, function and fuse-map compatible with all 20-pin GAL devices
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H-5/7/10/15/25,
Q-10/15/25
H-10/15/25,
Q-20/25
H-15/20/25
PALCE16V8
20-Pin
PAL16R8
PAL10H8
iP2970
palce16v8 programming guide
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Untitled
Abstract: No abstract text available
Text: PALCE22V10 COM'L: H-5/7/10/15/25,0-10/15/25 IND: H-10/15/20/25 PALCE22V10Z COM'L:-25 IND: -15/25 BEYOND PERFO RM A N CE PALCE22V10 and PALCE22V10Z Families 24-Pin EE CMOS Zero Power Versatile PAL Device DISTINCTIVE CHARACTERISTICS ♦ As fast as 5-ns propagation delay and 142.8 MHz fMAX (external)
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PALCE22V10
H-5/7/10/15/25
H-10/15/20/25
PALCE22V10Z
24-Pin
Ext-15
PALCE22V10H-20
PALCE22V1
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Untitled
Abstract: No abstract text available
Text: 10 - 500 MHz Standard Hybrid Amplifier Specification limit Parameters 10-500 MHz bandwidth Temperature Frequency range TO-8 package 0.8 1.0 dB M ax p-p 25 25 d B Min Input 1.5:1 1.5:1 Max Output 1.5:1 1.5:1 Max + 15 + 14 dBm Min 3rd O rde r +28 +25 dBm Min
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H91-0127
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Untitled
Abstract: No abstract text available
Text: PALCE22V10 COM'L: H-5/7/10/15/25,Q-10/15/25 IND: H-10/15/20/25 PALCE22V10Z COM'L:-25 IN D :-15/25 VANTI S BEY O N D PER FO RM AN C E PALCE22V10 and PALCE22V10Z Families 24-Pin EE CMOS Zero Power Versatile PAL Device DISTINCTIVE CHARACTERISTICS ♦ As fast as 5-ns propagation delay and 142.8 M H z f MAX (external)
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PALCE22V10
H-5/7/10/15/25
Q-10/15/25
H-10/15/20/25
PALCE22V10Z
PALCE22V10Z
24-Pin
PALCE22V10H-20
PALCE22V10H-25
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Untitled
Abstract: No abstract text available
Text: 10-400 MHz Standard Hybrid Amplifier Parameters 10-400 M H z bandwidth Specification limit Temperature +25 0.5 1.0 dB M ax p-p 25 25 dB Min Input 1.5:1 1.5:1 Max Output 1.6:1 1.6:1 M ax + 19 + 19 dBm Min 3rd O rde r + 32 + 31 dBm Min 2nd O rde r + 41 + 38
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