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    10 M 7.5A Search Results

    10 M 7.5A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5962-9762201QEA Texas Instruments Quad LVDS Receiver 16-CDIP -55 to 125 Visit Texas Instruments Buy
    SN65LV1023ARHBR Texas Instruments 10:1 LVDS Serdes Transmitter 100 - 660Mbps 32-VQFN -40 to 85 Visit Texas Instruments Buy
    SN65LV1224BDBR Texas Instruments 1:10 LVDS Serdes Receiver 100 - 660Mbps 28-SSOP -40 to 85 Visit Texas Instruments Buy
    SN65LVCP22DR Texas Instruments 2x2 Crosspoint Switch : LVDS Outputs 16-SOIC -40 to 85 Visit Texas Instruments Buy
    SN65LVCP23PW Texas Instruments 2x2 Crosspoint Switch : LVPECL Outputs 16-TSSOP -40 to 85 Visit Texas Instruments Buy
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    10 M 7.5A Price and Stock

    IDEC Corporation NRBM1100-F-7.5A-AA

    Circuit Breakers Circuit Breaker
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics NRBM1100-F-7.5A-AA 1
    • 1 $53.02
    • 10 $44.87
    • 100 $32.63
    • 1000 $30.59
    • 10000 $30.59
    Buy Now

    IDEC Corporation NRBM2100-F-7.5A-AA

    Circuit Breakers Circuit Protector 7.5A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics NRBM2100-F-7.5A-AA 1
    • 1 $116.08
    • 10 $98.24
    • 100 $71.45
    • 1000 $71.45
    • 10000 $71.45
    Buy Now

    PanJit Semiconductor P4SMAJ7.5A_R1_00001

    ESD Protection Diodes / TVS Diodes 400W,Transient Voltage Suppressors,SMA,7.5V,UNI
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics P4SMAJ7.5A_R1_00001
    • 1 $0.29
    • 10 $0.29
    • 100 $0.259
    • 1000 $0.131
    • 10000 $0.072
    Get Quote

    PanJit Semiconductor SMF7.5A_R1_00001

    ESD Protection Diodes / TVS Diodes 200W,Transient Voltage Suppressors,SOD-123FL,7.5V,UNI
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SMF7.5A_R1_00001
    • 1 $0.32
    • 10 $0.32
    • 100 $0.288
    • 1000 $0.239
    • 10000 $0.08
    Get Quote

    Vishay Intertechnologies SMB10J7.5A-E3/5B

    ESD Protection Diodes / TVS Diodes 1000W 7.5V 5% Uni
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SMB10J7.5A-E3/5B
    • 1 $0.56
    • 10 $0.482
    • 100 $0.335
    • 1000 $0.213
    • 10000 $0.159
    Get Quote

    10 M 7.5A Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    10 M7.5A SPK Electronics Electromechanical Filter 10.7 MHz BPF, 1.5 dB IL, 0.5 dB Inband ripple Original PDF
    10 M7.5A Vanlong Technology Electromechanical Filter 10.7 MHz BPF, 1.5 dB IL, 0.5 dB Inband ripple Original PDF
    10 M 7.5A SNR Electromechanical Filter 10.7 MHz BPF, 2 dB IL, 0.5 dB Inband ripple Scan PDF
    10M7.5AZ10 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    10M7.5AZ5 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF

    10 M 7.5A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TO-247

    Abstract: VNB35NV04 VNP35NV04 VNV35NV04 VNW35NV04
    Text: VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04 “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET TYPE VNB35NV04 VNP35NV04 VNV35NV04 RDS on Ilim Vclamp 10 mΩ (*) 30 A 40 V 10 3 1 1 VNW35NV04 PowerSO-10 D2PAK (*) For PowerSO-10 only n LINEAR CURRENT LIMITATION


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    VNB35NV04 VNP35NV04 VNV35NV04 VNW35NV04 VNB35NV04 VNV35NV04 PowerSO-10TM PowerSO-10 TO-247 VNP35NV04 VNW35NV04 PDF

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    Abstract: No abstract text available
    Text: VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04 “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET TYPE VNB35NV04 VNP35NV04 VNV35NV04 RDS on Ilim Vclamp 10 mΩ (*) 30 A 40 V 10 3 1 1 VNW35NV04 PowerSO-10 D2PAK (*) For PowerSO-10 only n LINEAR CURRENT LIMITATION


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    VNB35NV04 VNP35NV04 VNV35NV04 VNW35NV04 PowerSO-10 PowerSO-10TM PDF

    OMNIFET

    Abstract: VNB35NV04 VNP35NV04 VNV35NV04 VNW35NV04 VIPower
    Text: VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04 “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET TYPE VNB35NV04 VNP35NV04 VNV35NV04 RDS on Ilim Vclamp 10 mΩ (*) 30 A 40 V 10 3 1 1 VNW35NV04 PowerSO-10 D2PAK (*) For PowerSO-10 only n LINEAR CURRENT LIMITATION


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    VNB35NV04 VNP35NV04 VNV35NV04 VNW35NV04 VNB35NV04 VNV35NV04 PowerSO-10TM PowerSO-10 OMNIFET VNP35NV04 VNW35NV04 VIPower PDF

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    Abstract: No abstract text available
    Text: VNB35NV04 VNV35NV04 OMNIFET II fully autoprotected Power MOSFET Datasheet − production data Features Type RDS on VNB35NV04 VNV35NV04 10 mΩ(1) Ilim Vclamp 10 3 30 A 40 V 1 D2PAK 1 PowerSO-10 1. For PowerSO-10 only • Linear current limitation ■ Thermal shut down


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    VNB35NV04 VNV35NV04 PowerSO-10 PowerSO-10 VNB35NV04 VNV35NV04 PDF

    D2Pak Package dimensions

    Abstract: No abstract text available
    Text: VNB35NV04 VNV35NV04 OMNIFET II fully autoprotected Power MOSFET Datasheet − production data Features Type RDS on VNB35NV04 VNV35NV04 10 mΩ(1) Ilim Vclamp 10 3 30 A 40 V 1 D2PAK 1 PowerSO-10 1. For PowerSO-10 only • Linear current limitation ■ Thermal shut down


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    VNB35NV04 VNV35NV04 VNV35NV04 PowerSO-10 PowerSO-10 D2Pak Package dimensions PDF

    D2Pak Package dimensions

    Abstract: No abstract text available
    Text: VNB35NV04-E VNP35NV04-E, VNV35NV04-E OMNIFET II fully autoprotected Power MOSFET Datasheet − production data Features Type RDS on VNB35NV04-E VNP35NV04-E VNV35NV04-E Ilim Vclamp 10 3 10 mΩ(1) 30 A 1 40 V 1 D2PAK PowerSO-10 1. For PowerSO-10 only • Linear current limitation


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    VNB35NV04-E VNP35NV04-E, VNV35NV04-E VNP35NV04-E VNV35NV04-E PowerSO-10 PowerSO-10 O-220 VNB35NV04-E, D2Pak Package dimensions PDF

    FDD6635

    Abstract: No abstract text available
    Text: FDD6635 35V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been produced using • 59 A, 35 V Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low Rdson and optimized Bvdss RDS ON = 10 mΩ @ VGS = 10 V


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    FDD6635 O-252 O-252) FDD6635 PDF

    FDD6635

    Abstract: No abstract text available
    Text: FDD6635 35V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been produced using • 59 A, 35 V Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low Rdson and optimized Bvdss RDS ON = 10 mΩ @ VGS = 10 V


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    FDD6635 O-252 O-252) FDD6635 PDF

    fdd6635

    Abstract: 6635 fet
    Text: FDD6635 tm 35V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been produced using • 59 A, 35 V Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low Rdson and optimized Bvdss RDS ON = 10 mΩ @ VGS = 10 V


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    FDD6635 O-252 O-252) fdd6635 6635 fet PDF

    Untitled

    Abstract: No abstract text available
    Text: FDD6635 tm 35V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been produced using • 59 A, 35 V Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low Rdson and optimized Bvdss RDS ON = 10 mΩ @ VGS = 10 V


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    FDD6635 O-252 O-252) PDF

    Untitled

    Abstract: No abstract text available
    Text: FDP15N40 N-Channel UniFETTM MOSFET 400 V, 15 A, 300 m Features Description • RDS on = 240 m (Typ.) @ VGS = 10 V, ID = 7.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.


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    FDP15N40 FDP15N40 PDF

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    Abstract: No abstract text available
    Text: FDPF16N50UT N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 15 A, 480 mΩ Features Description • RDS on = 370 mΩ ( Typ.) @ VGS = 10 V, ID = 7.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This


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    FDPF16N50UT 50nsec 200nsec PDF

    Untitled

    Abstract: No abstract text available
    Text: FQA13N50CF N-Channel QFET FRFET® MOSFET 500 V, 15 A, 480 mΩ Features Description • 15 A, 500 V, RDS on = 480 mΩ (Max.) @ VGS = 10 V, ID = 7.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar


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    FQA13N50CF PDF

    fqa13n50c

    Abstract: FQA13N50CF_F109
    Text: FQA13N50CF N-Channel QFET FRFET® MOSFET 500 V, 15 A, 48 mΩ Features Description • 15 A, 500 V, RDS on = 48 mΩ (Max.) @ VGS = 10 V, ID = 7.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar


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    FQA13N50CF FQA13N50CF fqa13n50c FQA13N50CF_F109 PDF

    Untitled

    Abstract: No abstract text available
    Text: March 2010 FDS6990AS Dual 30V N-Channel PowerTrench SyncFET Features General Description • 7.5 A, 30 V. RDS ON = 22 mΩ @ VGS = 10 V RDS(ON) = 28 mΩ @ VGS = 4.5 V ■ Includes SyncFET Schottky diode ■ Low gate charge (10nC typical) ■ High performance trench technology for extremely low


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    FDS6990AS FDS6990AS PDF

    FDS6990A

    Abstract: FDS6990AS
    Text: March 2010 FDS6990AS Dual 30V N-Channel PowerTrench SyncFET Features General Description • 7.5 A, 30 V. RDS ON = 22 mΩ @ VGS = 10 V RDS(ON) = 28 mΩ @ VGS = 4.5 V ■ Includes SyncFET Schottky diode ■ Low gate charge (10nC typical) ■ High performance trench technology for extremely low


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    FDS6990AS FDS6990AS FDS6990A PDF

    Untitled

    Abstract: No abstract text available
    Text: rS A K H tV InjmVfarmoMfaetu 2_ ^_ I_1 A REVISIONS to to - —— •. wprotowd attor torn . t * tto T w right b grantori to w M to to M m SYM D E S C R IP T IO N ECN 1 New drawing DATE APPROVED 10/19/10 ip 66.80 52.50


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    f0/19/10 RC827 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SK2417 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O S V 2SK2417 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 10 ± 0 .3


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    2SK2417 0-42n 20kil) PDF

    2Sa1045

    Abstract: 2SC2435 2sa104
    Text: 37C • 37^7L2 G001ÖL3 a FUJITSU 2SC2435 M ICROELECTRONICS 2SA1045 SILICON RING EMITTER 7 - 93- 33 DARLINGTON TRANSISTORS 10 AMP, 100 VOLT •10 absolute m a x im m ra tin g s Rating Symbol 2SC2435/2SA1045 Unit Collector to Base Voltage Emitter to Base Voltage


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    2SC2435 2SA1045 2SC2435/2SA1045 2SA1045 O-220 2SC2435 2sa104 PDF

    PS-14-24

    Abstract: ps-12-24 7.5a PS10-24 PS-12-24 PS 14-24 PS-10-24 PS1025 PS-Series ps113 lambda
    Text: PS-SERIES UMBDAA Single output 72W ~ 240W DENSEI-LAMBDA Unit Type Power Supply Model name PS-10-24 T Nominai output voltage I Shape of chassis _ _ - [o : 72W Name of series M 1 :1 20W M 2 : 180W M 4 : 240W • Features • Applicable to peak current load • Output peak current: Up to 2 times nominal current


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    ps-10-24 PS-10-24 24V3A PS-14-24 24V10A 132VAC/170 265VAC 132VAC 440Hz) ps-12-24 7.5a PS10-24 PS-12-24 PS 14-24 PS1025 PS-Series ps113 lambda PDF

    KPJX-4S

    Abstract: 1295H
    Text: co co o M aterial and Finish -17.0- Inner Shield: copper alloy, tin plated -9.0- 1 "SI- * 0 03.0 4 . 0-1 Body: PBT thermoplastic UL94V-0 rated color - black 00 o s 10 oo evi t- 5 CM Contacts: brass, tin plated Electrical Characteristics 10 Contact Rating:


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    UL94V-0 2002/95/EC LR78160 KPJX-4S 1295H PDF

    2SK2417

    Abstract: transistor marking 75s
    Text: TOSHIBA 2SK2417 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL MOS TYPE tt-M O S V 2SK2417 INDUSTRIAL APPLICATIONS U nit in mm HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TO R DRIVE APPLICATIONS 10 ±0.3


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    2SK2417 2SK2417 transistor marking 75s PDF

    AMD K6 equivalent

    Abstract: AMD MOTHERBOARD CIRCUIT diagram circuit diagram of motherboard z50 regulator P55C RCB002 RCB002-10 V121 pentium 4 motherboard CIRCUIT diagram core 2 motherboard CIRCUIT diagram
    Text: FAIRCHILD s e m ic o n d u c t o r Tm w w w .fa ir c h ild s e m i.c o m RCB002 Voltage Regulator Module VRM for Pentium P55C and K6 Processors Features Fixed 2.8V, 2.9V or 3.2V output from 5V supply Maximum output current 7.5 A for RCB002-8 Maximum output current 10A for RCB002-10


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    RCB002 RCB002-8 RCB002-10 30-pin RCB002 DS3000B002 AMD K6 equivalent AMD MOTHERBOARD CIRCUIT diagram circuit diagram of motherboard z50 regulator P55C RCB002-10 V121 pentium 4 motherboard CIRCUIT diagram core 2 motherboard CIRCUIT diagram PDF

    Untitled

    Abstract: No abstract text available
    Text: o CO CO o 4 05 13.6±0.3— i S CO O a. 10 C\l r- 10 05 S o m o -j 4 P/W CONFIGURATION c IB CO D £ CO Material and Finish Electrical Characteristics Body: ABS Thermoplastic UL94-0 Rated Black Color Contact Rating: Inner Shield: Copper Alloy, Nickel Plated


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    UL94-0 2002/95/EC PDF