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    10 35L A8 Search Results

    10 35L A8 Datasheets Context Search

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    AS8S512K32

    Abstract: No abstract text available
    Text: SRAM AS8S512K32 & AS8S512K32A 512K x 32 SRAM OPTIONS SRAM MEMORY ARRAY Operating Temp. Ranges Full Military -55oC to +125oC Military (-55oC to +125oC) Industrial (-40oC to +85oC) Markings Q & 883 XT IT Timing 12ns 15ns 17ns 20ns Timing 25ns 35ns 45ns 55ns


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    PDF AS8S512K32 AS8S512K32A -55oC 125oC) -40oC MIL-STD-883 512Kx32 AS8S512K32

    128K x 8 Static RAM

    Abstract: 5962-8959812MYA 5962-8959810MZ
    Text: L7C108 L7C109 128K x 8 Static RAM Pin Configuration     32-pin Ceramic DIP 32-pin Ceramic SOJ NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A15 CE2 WE A13


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    PDF L7C108 L7C109 32-pin MIL-STD-883, LDS-L7C108/9-G 128K x 8 Static RAM 5962-8959812MYA 5962-8959810MZ

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    Abstract: No abstract text available
    Text: PRELIMINARY INFORMATION L7C108 L7C109 128K x 8 Static RAM Pin Configuration 32-pin Ceramic DIP 32-pin Ceramic SOJ NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17


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    PDF L7C108 L7C109 32-pin LDS-L7C108/9-F

    D-P5DW

    Abstract: 10 35L W1 double acting cylinder 10 35L CAP CDQ2B63 D-J79W ya10 THREAD ROD 11-CQ2 CQ2B16-PS
    Text: Compact Cylinder: Standard Type Double Acting, Single Rod Series CQ2 ø12, ø16, ø20, ø25, ø32, ø40, ø50, ø63, ø80, ø100 How to Order Without auto switch With auto switch CQ2 B 20 30 D CDQ2 B 20 30 D J79W S Built-in magnet Ȝ Ȝ Mounting style Ȝ B Through-hole Standard F Rod side flange style


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    PDF 73C/A80C D-A7H/A80H D-A79W D-F7/J79 D-J79C D-F7W/J79W D-F79F, 20Data D-P5DW 10 35L W1 double acting cylinder 10 35L CAP CDQ2B63 D-J79W ya10 THREAD ROD 11-CQ2 CQ2B16-PS

    U62H64

    Abstract: ZMD AG
    Text: U62H64 Automotive Fast 8K x 8 SRAM Features Description ! Fast 8192 x 8 bit static CMOS The U62H64 is a static RAM manufactured using a CMOS process technology with the following operating modes: - Read - Standby - Write - Data Retention The memory array is based on a


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    PDF U62H64 U62H64 D-01109 D-01101 ZMD AG

    TSOP 1378

    Abstract: 62C1024 IS62LV1024L IS62LV1024LL
    Text: IS62LV1024L IS62LV1024L/LL IS62LV1024LL ISSI 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM FEATURES • Access times of 35, 45, 50, and 70 ns • Low active power: 60 mW typical • Low standby power: 15 µW (typical) CMOS standby • Low data retention voltage: 2V (min.)


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    PDF IS62LV1024L IS62LV1024L/LL IS62LV1024LL IS62LV1024L IS62LV1024LL 072-word IS62LV1024LL-55Q IS62LV1024LL-55T IS62LV1024LL-55H 450-mil TSOP 1378 62C1024

    51C69

    Abstract: 51C68-35L 51C68 2148H 10 35L 51C68-30 51C68-35 290091
    Text: 51C68 HIGH SPEED CHMOS 4096 x 4-BIT STATIC RAM 51C68-30 51C68-35 51C68-35L Max. Access Time ns 30 35 35 Max. Active Current (mA) 90 90 65 Max. Standby Current (mA) 10 10 5 Double Metal CHMOS III Technology High Density 20-Pin Package Completely Static Memory-No Clock


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    PDF 51C68 51C68-30 51C68-35 51C68-35L 20-Pin 2148H 51C68 384-bit 51C69 51C68-35L 10 35L 290091

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    Abstract: No abstract text available
    Text: intei 51C68 HIGH SPEED CHMOS 4096 x 4-BIT STATIC RAM 51C68-30 51C68-35 51C68-35L Max. Access Time ns 30 35 35 Max. Active Current (mA) 90 90 65 Max. Standby Current (mA) 10 10 5 Double Metal CHMOS III Technology High Density 20-Pin Package Completely Static Memory-No Clock


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    PDF 51C68 51C68-30 51C68-35 51C68-35L 20-Pin 2148H 51C68 384-bit

    51C69

    Abstract: acs 08 5s 290091
    Text: intei 51C68 HIGH SPEED CHMOS 4096 x 4-BIT STATIC RAM 51C68-30 51C68-35 M ax. A c c e s s T im e ns 30 35 35 M ax. A ctive C urren t (m A ) 90 90 65 M ax. S tand by C u rren t (m A) 10 10 5 51C68-35L Double Metal CHMOS III Technology High Density 20-Pin Package


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    PDF 51C68 51C68-30 51C68-35 51C68-35L 20-Pin 2148H 384-bit 51C68 51C69 acs 08 5s 290091

    10 35L

    Abstract: No abstract text available
    Text: hEMTÖSS 00243^1 3b4 • M I T I MITSUBISHI LS Is M5M5259CP, J-15,-20,-25,-35, -20L,-25L,-35L 262144-BIT 65536-WORD BY 4-BIT CMOS STATIC RAM (WITH OE) DESCRIPTION The M5M5259C is a family of 65536 word by 4-bit static RAMs with OE input, fabricated with the high-performance


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    PDF M5M5259CP, 262144-BIT 65536-WORD M5M5259C M5M5259CP 5259CP J-20L 10 35L

    Untitled

    Abstract: No abstract text available
    Text: blE D bSMTöBS 00SÜ031 215 IMITI MITSUBISHI LSIs M5M5257AP,J-25,-30,-35,-45, -30L,-35L,-45L 2 6 2 1 4 4 -B IT 2 6 2 1 4 4 -WORD BY l-B IT C M O S STATIC RAM MITSUBISHI (MEMORY/ASIC) DESCRIPTION P IN C O N F IG U R A T IO N (T O P V IE W ) The M5M5257A is a fam ily o f 262144-word by 1-bit static


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    PDF M5M5257AP M5M5257A 262144-word 5257dge

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LS Is M 5 M 5 2 5 9 C P , J -1 5 ,-2 0 ,-2 5 ,-3 5 , -2 0 L ,-2 5 L ,-3 5 L 262144-BIT 65536-WORD BY 4-BIT CMOS STATIC RAM (WITH OE) DESCRIPTION The M5M5259C is a family of 65536 word by 4-bit static RAMs with 0E input, fabricated with the high-performance


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    PDF 262144-BIT 65536-WORD M5M5259C M5M5259CP 0-701C,

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LS Is M5M5259CP, J-15,-20,-25,-35, -20L,-25L,-35L 262144-BIT 65536-WORD BY 4-BIT CMOS STATIC RAM (WITH OE) DESCRIPTION The M5M5259C is a family of 65536 word by 4-bit static PIN CONFIGURATION (TOP VIEW) RAMs with 0E input, fabricated with the high-performance


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    PDF M5M5259CP, 262144-BIT 65536-WORD M5M5259C M5M5259CP

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LS Is M5M51004P,J-25,-35,-45,-25L,-35L,-45L 1048576-BIT 262144-WORD BY 4-BIT CMOS STATIC RAM DESCRIPTION The M5M51004 is a family of 262144-word by 4-bit static RAMs, fabricated with the high-performance CMOS silicon- PIN CONFIGURATION (TOP VIEW)


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    PDF M5M51004P 1048576-BIT 262144-WORD M5M51004 400mW

    M5M51004

    Abstract: No abstract text available
    Text: M5M51004P,J-25,-35,-45,-25L,-35L,"4E L 1048576-BIT 262144-WORD BY 4-BIT) CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M5M51004 is a family of 262144-word by 4-bit static RAMs, fabricated with the high-performance CMOS silicon V c c (5 \0 gate process and designed for high-speed application. These


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    PDF M5M51004P 1048576-BIT 262144-WORD M5M51004 400mW

    M5M5258cp

    Abstract: 10 35L 5258C 10 35L A8
    Text: MITSUBISHI LS Is M5M5258CP, J-15,-20,-25,-35, -20L,-25L,-35L 262144-BIT 65536-WORD BY 4-BIT CMOS STATIC RAM DESCRIPTION The M 5M 5258C is a fam ily o f 6 5 5 3 6 w ord by 4-bit static PIN CONFIGURATION (TOP VIEW) RAMs, fabricated w ith the high-performance CMOS silicongate


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    PDF M5M5258CP, 262144-BIT 65536-WORD 5258C J-20L, M5M5258cp 10 35L 10 35L A8

    Untitled

    Abstract: No abstract text available
    Text: I 1324^25 00214307 b?0 • M I T I M ITSUBISHILSIs M5M51001P,J-25, -35,-45, -25L,-35L,-45L 1048576-BIT 1048576-WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M5M51001 is a family of 1048576-word by 1-bit static RAMs, fabricated with the high-performance CMOS silicon-


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    PDF M5M51001P 1048576-BIT 1048576-WORD M5M51001 -25Lr

    510042

    Abstract: No abstract text available
    Text: MITSUBISHI LS Is M5M51004P,J-25,-35,-45,-25L,-35L,-45L 1048576-BIT 262144-WORD BY 4-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M 5 M 5 1 0 0 4 is a fam ily o f 262144-w ord by 4-bit static RAMs, fabricated w ith the high-performance CMOS silicon


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    PDF M5M51004P 1048576-BIT 262144-WORD 262144-w 51004P 510042

    Untitled

    Abstract: No abstract text available
    Text: b S 4 cî ô2 S 0D2433S 272 • M I T I M 5 M MITSUBISHILSIs 5 2 5 7 B P , J - 1 5 , - 1 7 , - 2 0 , - 2 5 ,- 3 5 , - 2 0 L , - 2 5 L , - 3 5 L 262144-BIT 262144-WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION The M5M5257B is a family of 262144-word by 1-bit static


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    PDF 0D2433S 262144-BIT 262144-WORD M5M5257B M5M5257BP J-20L

    H 9311

    Abstract: 74LVT16501A SSOP56 TSSOP56
    Text: This Material Copyrighted By Its Respective Manufacturer Philips Sem iconductors Product specification 3.3V 18-bit universal bus transceiver 3-State PIN CONFIGURATION 74LVT16501A LOGIC SYMBOL (IEEE/IEC) - -O EAB LEAB AO GND A1 A2 VC C A3


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    PDF 18-bit 74LVT16501A SA00128 OT371-1 MO-118AB LVT18-bit TSSOP56: OT364-1 -fol0-08 H 9311 74LVT16501A SSOP56 TSSOP56

    NG42

    Abstract: No abstract text available
    Text: 5 18120 J/TM 12 SONY CXK B 65,536-word x 18-bit High-Speed Bi-CMOS Static RAM Description C XK5B18120J/TM are high speed 1Mbit Bi-CMOS sta tic RAMs orga nize d as 6 5 ,5 3 6 -w o rd s-b y-1 8 -b its. Operating on a single 3.3V supply these asynchronous ICs are suitable for use in high speed and low power


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    PDF 536-word 18-bit XK5B18120J/TM 1116mW CXK5B18120J 400mil, 44-pin CXK5B18120TM NG42

    IN2804

    Abstract: No abstract text available
    Text: HYM539400 M-Series •HYUNDAI 4M X 39-bit CMOS DRAM MODULE DESCRIPTION The HYM539400 is a 4M x 39-bit Fast page mode CMOS DRAM module consisting of ten HY5116400 in 24/28 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0. 22,1/ F decoupling capacitor is mounted for each DRAM.


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    PDF HYM539400 39-bit HY5116400 HYM539400MG/ 1CE10-10-MAY94 DQD3S35 IN2804

    Untitled

    Abstract: No abstract text available
    Text: CY7C187A CYPRESS 64K x 1 Static RAM Features Functional Description • High speed location specified on the address pins A« through A 15 . The CY7C1H7A is a high-perform ance CM OS static RAM organized as 65,536 words by 1 bit. Easy memory expansion is


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    PDF CY7C187A 7C187A

    Untitled

    Abstract: No abstract text available
    Text: IS62LV1024L IS62LV1024LL — 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM a d v a n c e in f o r m a t io n FEBRUARY 1997 FEATURES DESCRIPTION • Access times of 35, 45, 55, and 70 ns T he I S S I IS 62LV 1024L and IS62LV 1024LL are low pow er and low Vcc, 1 31,072-word by 8-bit C M O S static RAM s. T hey


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    PDF IS62LV1024L IS62LV1024LL 1024L IS62LV 1024LL 072-word LV1024LL-45Q IS62LV1024LL-45T IS62LV1024LL-55Q IS62LV1024LL-55T