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    1.2 MICRON CMOS PROCESS FAMILY Search Results

    1.2 MICRON CMOS PROCESS FAMILY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    1.2 MICRON CMOS PROCESS FAMILY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    cmos transistor 0.35 um

    Abstract: 0.6 um cmos process transistor BIPOLAR
    Text: 4 Micron CMOS Process Family Features Process parameters • Double Poly / Double Metal Process Parameters 4µm 4µm 10 volts 15 volts Metal I pitch width/space 4/4 4 /4 µm Metal II pitch (width/space) 3/4 3/4 µm Poly pitch (width/space) 4/4 4 /4 µm Contact


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    CMOS Process Family

    Abstract: st 9701
    Text: 5 Micron CMOS Process Family Process parameters Features • Double Poly / Single Metal 5µm 12 volts Units Metal I pitch width/space 5/5 µm Poly pitch (width/space) 5/5 µm Contact 5x5 µm Via 5x5 µm 5 µm P-well junction depth 6.3 µm N+ junction depth


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    Eftec ra 308

    Abstract: Ablebond 84-1LMISR4 JM2500 wafer fab control plan MICRON 64T
    Text: Reliability Update Table of Contents Overview . 1 Organization of the Update . 1


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    intel Socket 775 VID VTT

    Abstract: 775 MOTHERBOARD CIRCUIT diagram intel 775 motherboard diagram socket AM2 pinout socket pga370
    Text: Intel Pentium® III Processor Based on 0.13 Micron Process Up to 1.33 GHz Datasheet • ■ ■ ■ ■ ■ ■ ■ Available at 1.0, 1.13, 1.20, 1.33 GHz. System bus frequency at 133 MHz 256 KB Advanced Transfer Cache on-die, full speed Level 2 (L2 cache with Error


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    SiQUEST

    Abstract: S300 S400 S500 S600 S800 S000 S100 S1000 S200
    Text: SiQUEST INCORPORATED S1000 CMOS Gate Arrays OVERVIEW • • • • • • 1.2 Micron CMOS 2-level 540 to 22,330 Gates Up to 210 I/O Pads TTL/CMOS Compatible I/O >4000V ESD Protection • • • • • • FPGA Conversion Utilities Full-scan Insertion Available


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    PDF S1000 SiQUEST S300 S400 S500 S600 S800 S000 S100 S200

    S7144

    Abstract: SiQUEST S7160 S7240 S7072 S7100 S7000 S7046 S7208 S7300
    Text: SiQUEST INCORPORATED S7000 CMOS Gate Arrays OVERVIEW • • • • • • • • • • • 0.8 Micron CMOS 2-level Metal 2,450 to 44,700 Gates Up to 292 I/O Pads TTL/CMOS Compatible I/O FPGA conversion >400 Library Components Wide Package Selection ISO Certified Suppliers


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    PDF S7000 S7144 SiQUEST S7160 S7240 S7072 S7100 S7046 S7208 S7300

    14020

    Abstract: MG2000 MG2001 MG2002 MG2004 MG2010 MG2044 MG2055
    Text: MG2 0.5 Micron Sea of Gates Introduction The MG2 series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2 is manufactured using SCMOS3/2, a 0.5 micron drawn, 3 metal layers CMOS process.


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    PDF BOUT12 14020 MG2000 MG2001 MG2002 MG2004 MG2010 MG2044 MG2055

    rpp1k1

    Abstract: No abstract text available
    Text: 0.18 m Process Family: XT018 0.18 Micron HV SOI CMOS Technology DESCRIPTION The XT018 series is X-FAB’s 0.18 micron Modular High-voltage SOI CMOS Technology. Based on SOI wafers and the industrial standard single poly with up to six metal layers 0.18-micron drawn gate


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    PDF XT018 XT018 18-micron rpp1k1

    32M DPRAM

    Abstract: MG2044E MG2091E MG2140E MG2194E MG2265E MG2360E MG2480E MG2700E TM1019
    Text: MG2RT Radiation Tolerant 0.5 Micron Sea of Gates Introduction The MG2RT series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2RT is manufactured using SCMOS3/2RT, a 0.5 micron drawn, 3 metal layers


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    PDF Tree65 32M DPRAM MG2044E MG2091E MG2140E MG2194E MG2265E MG2360E MG2480E MG2700E TM1019

    all type of motherboard 775 socket

    Abstract: schematic diagram of TV memory writer socket AM2 pinout intel 775 motherboard diagram 775 motherboard intel pentium 3 motherboard schematic diagram intel pentium 4 motherboard schematic diagram Intel Pentium 4 Socket 775 PIN diagram Socket am2 Processor Functional Data Sheet socket pga370
    Text: Pentium III Processor for the PGA370 Socket at 1.13A to 1.20GHz on 0.13 micron process Datasheet Product Features • ■ ■ ■ ■ ■ ■ ■ Available at 1.13 and 1.20GHz System bus frequency at 133 MHz 256KB Advanced Transfer Cache on-die, full speed Level 2 (L2 cache with Error


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    PDF PGA370 20GHz 20GHz 256KB PGA370 all type of motherboard 775 socket schematic diagram of TV memory writer socket AM2 pinout intel 775 motherboard diagram 775 motherboard intel pentium 3 motherboard schematic diagram intel pentium 4 motherboard schematic diagram Intel Pentium 4 Socket 775 PIN diagram Socket am2 Processor Functional Data Sheet socket pga370

    MG1070

    Abstract: No abstract text available
    Text: MG1 MG1 Sea of Gates Series 0.6 Micron CMOS Description The MG1 series is a 0.6 micron, array based, CMOS product family offering a new frontier in integration and speed. Several arrays up to 500k cells cover all system integration needs. The MG1 is manufactured using


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    PDF BOUT12 MG1070

    atmel 738

    Abstract: MG1070 ATMEL 706 MG1001 atmel 829
    Text: MG1 0.6 Micron Sea of Gates Introduction The MG1 series is a 0.6 micron, array based, CMOS product family offering a new frontier in integration and speed. Several arrays up to 500k cells cover all system integration needs. The MG1 is manufactured using SCMOS 2/2, a 0.6 micron drawn, 3 metal layers CMOS


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    PDF out12, BOUT12 atmel 738 MG1070 ATMEL 706 MG1001 atmel 829

    MG2000

    Abstract: MG2001 MG2002 MG2004 MG2010 MG2044 MG2055 MATRA MHS, MG2
    Text: MG2 MG2 Sea of Gates Series 0.5 Micron CMOS Introduction The MG2 series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2 is manufactured using SCMOS 3/2, a 0.5 micron drawn, 3 metal layers


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    PDF BOUT12 MG2000 MG2001 MG2002 MG2004 MG2010 MG2044 MG2055 MATRA MHS, MG2

    S-MOS navnet

    Abstract: S-MOS asic B16c F1841
    Text: DEC 2 3 i32S _ S-MOS S Y S T E M S • ■ ASIC _ A Seiko Epson Affiliate SLA9000 OCTOBER 1990 HIGH SPEED CMOS GATE ARRAYS DESCRIPTION The S-MOS SLA9000 series is a family of sea-of-gates • 1.0 micron drawn channel length N-Channel


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    PDF SLA9000 SLA9000 S-MOS navnet S-MOS asic B16c F1841

    Untitled

    Abstract: No abstract text available
    Text: AUA 53 HARRIS Automated Universal Array Radiation Hardened CM O S/SOS Family December 1990 D escription Features • Radiation Hardened ►Total D o s e .> 1 x 1 0 Rads Si ►Survivability . > 1 x 1 0 12 Rads (Si)/s


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    2500ECL

    Abstract: Motorola Bipolar Power Transistor Data Double Die IC 566 function generator HCA62A17 CMOS 4032 1987 Micron Technology Micron NAND bca 1st motorola ECL motorola mca
    Text: BR334/D Rev 3 Motorola Semicustom gives the designer the same process-technology choices available for discrete-logic designs, and the option of Macrocell array or cell-based func­ tions for commercial and military applications. • For very high speeds — state-of-the-art ECL arrays.


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    PDF BR334/D 2500ECL Motorola Bipolar Power Transistor Data Double Die IC 566 function generator HCA62A17 CMOS 4032 1987 Micron Technology Micron NAND bca 1st motorola ECL motorola mca

    Untitled

    Abstract: No abstract text available
    Text: MOE D • MOSSTlb 0D137Ö3 3 ■ A M I . . T - M 2 - 8 \ G ould AMI S ilic o n F ou n d ry A pproach Gould AMI is proud of the leadership position it occupies in today’s fast-paced world of process and technology. Our Silicon Foundry services and capabilities are truly world class. We pro­


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    PDF 0D137Ã

    SSC3020

    Abstract: SSC3030 F1841 SSC3110 F605 SSC3010 SSC3120 SSC3150
    Text: S S C 3 0 0 0 s e r ie s HIGH SPEED CMOS STANDARD CELL • DESCRIPTION The SSC3000 Series is comprised of the SSC3000 and SSC3500 family of standard cells. Each family is offered in 20 preset gate to I/O combinations. Both the SSC3000 and SSC3500 offer high speed and high drive capability


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    PDF SSC3000 SSC3500 SSC3000Serles SSC3020 SSC3030 F1841 SSC3110 F605 SSC3010 SSC3120 SSC3150

    pMOS NAND GATE

    Abstract: A540B ISO-5
    Text: UNIVERSAL SEMICONDUCTORS HE D ] “=131,0341 ODGQG4S 3 | T - «¿3.- //- 0 e] High Reliability Fast CMOS Gate Arrays UNIVERSAL SGMICONDUCTOR INC. FEATURES: • • • • • • • • •


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    PDF 13ba311 000D0M5 410x410 390x390 pMOS NAND GATE A540B ISO-5

    AS2562B

    Abstract: AS2501 TH6200 AS2575D handsfree chip IC CI-3010 AS5587 TH8001 AS-2501 as2562
    Text: Contents Page The Group . 4 C om m unications Products AS2501 Line A d ap te


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    PDF AS2501 AS2502B AS2512 AS2514 AS2520/1 AS2531/2 AS253ies AS2562B TH6200 AS2575D handsfree chip IC CI-3010 AS5587 TH8001 AS-2501 as2562

    design 8086 4k ram 8k rom

    Abstract: 80286 schematic 80286 microprocessor features intel 16k 8bit RAM chip digital clock using 8086 UC5208 intel 80286 circuits 240051 UCS51BIU Intel 8086 physical characteristics
    Text: in y 1.5 MICRON CHMOS III CELL LIBRARY VLSiCEL Elements, Cell Versions of Popular Intel Standard Microprocessors, Microcontrollers, and Microprocessor Support Peripherals, Offer the Highest Level of Micro-Computer Based System Integration. The Current Library


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    PDF 80C51BH 82C37A 82C54 82C59A 82C84 82C284 82C88 design 8086 4k ram 8k rom 80286 schematic 80286 microprocessor features intel 16k 8bit RAM chip digital clock using 8086 UC5208 intel 80286 circuits 240051 UCS51BIU Intel 8086 physical characteristics

    Untitled

    Abstract: No abstract text available
    Text: JUL 14 '993 PRELIMINARY MT4LS12832 128K X 32 SRAM MODULE M IC R O N • SfcMcCONDOCIOR. MC SRAM MODULE 128K X 32 SRAM LOW VOLTAGE FEATURES • High speed: 20*, 25 and 35ns • High-density 512KB design • High-performance, low-power, CMOS double-metal process


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    PDF MT4LS12832 512KB 64-Pin C1993.

    Untitled

    Abstract: No abstract text available
    Text: Temic MG1 S e m i c o n d u c t o r s MG1 Sea of Gates Series 0.6 Micron CMOS Description The MG1 series is a 0.6 micron, array based, CMOS product family offering a new frontier in integration and speed. Several arrays up to 500k cells cover all system integration needs. The MG1 is manufactured using


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    PDF BOUT12

    Untitled

    Abstract: No abstract text available
    Text: Temic MG2 Semiconductors MG2 Sea of Gates Series 0.5 Micron CMOS Introduction The MG2 series is a 0.5 micron, array based, CMOS prod­ uct family. Several arrays up to 700k cells cover all sys­ tem integration needs. The MG2 is manufactured using SCMOS3/2, a 0.5 micron drawn, 3 metal layers CMOS


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    PDF BOUT12