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    Abstract: No abstract text available
    Text: f Z 7 SGS-THOMSON ^ 7 # M f f lO IIL IC T M Q U A D D g i L O W -T O -H IG H . INDEPENDENCE O F POWER SUPPLY SE­ QUENCE CONSIDERATIONS - Vcc CAN EX­ CEED V dd , INPUT SIGNALS CAN EXCEED BOTH Vcc AND VDD • UP AND DOWN LEVEL-SHIFTING CAPA­ BILITY . THREE-STATE OUTPUTS W ITH SEPARATE


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    PDF 100nA 0Dbb702 HCC/HCF40109B PLCC20 7T2T237

    MH12808TNA-10

    Abstract: MH12808TNA-12 DG2B
    Text: MITSUBISHI LSIs {SRAM MODULE MH12808TNA-85,-10,-12,-15/ MH12808TNA-85H,-10H,-12H,-15H 1048576-BIT 131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) (Both side] The M H 12 808 T N A is a 1 0 4 8 5 7 6 -bits CMOS static RAM module organized as 13 1072 -w o rd s by 8 - bits. It consists


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    PDF MH12808TNA-85 MH12808TNA-85H 1048576-BIT 131072-WORD 100ns 120ns 150ns 12808TN 12808TNA-10H MH12808TNA-10 MH12808TNA-12 DG2B