power transistor mrc 438
Abstract: mrc 436 mrc 438 transistor mrc 439 mrc 442 mrc 437 transistor bd 370 siemens d213 transistor BD 370 b mrc 439
Text: - ESC D • ñ23SbQS 0Q043bfl 3 « S I E G 8236320 SIEMENS/ SPCL. SEMICONDS PNP Silicon Epibase Transistors SIEMENS AKTIENGESELLSCHAF J68 BD434 BD 436 D _ - BD 438 BD440 BD442 Power transistors for com plem entary AF stages The transistors BO 434, BD 436, BD 438, BD 440 and BD 442 are PNP silicon epibase
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23SbQS
0Q043bfl
BD434
BD440
BD442
434/BD
436/BD
BD434.
BD438.
fl23SbO
power transistor mrc 438
mrc 436
mrc 438
transistor mrc 439
mrc 442
mrc 437
transistor bd 370
siemens d213
transistor BD 370 b
mrc 439
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Q62702-C327
Abstract: Q62702-C327-V2 bcy77 K1754 C327 Q62702-C327-V1 Q62702-C327-V3 78-IX Q60203-Y78-H BCY792
Text: 5SC D • a23SbQS 0Q0432S 7 « S I E G r PNP Silicon Planar Transistors _ SIEMENS AKTIENGESELLSCHAF . BCY77 25C 04325 D ;_ B£ I ? S BCY79 BCY 77, BCY 78, and BCY 79 are epitaxial PNP silicon planar transistors in TO 18 cases 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistors are
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53SbOS
G00432S
Q62702-C327
Q62702-C327-V1
Q62702-C327-V2
Q62702-C327-V3
Q60203-Y78
Q60203-Y78-G
Q60203-Y78-H
Q60203-Y78-J
Q62702-C327
Q62702-C327-V2
bcy77
K1754
C327
Q62702-C327-V1
Q62702-C327-V3
78-IX
Q60203-Y78-H
BCY792
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ECG919
Abstract: ECG919D LD94 GH-013
Text: PHILIPS E C G INC bbS3T5â 0Q0434G b 17E ECG919, ECG919D S e m ic o n d u c to rs Features • Tw o independent comparators • Operates from a single SV supply • Typically 80ns response time at ±15V • Minimum fan-out of 2 each side • Maximum Input current of 1 mA over
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000434G
ECG919,
ECG919D
T-73-53
ECG919
ECG919D
LD94
GH-013
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transistor BC 153
Abstract: transistor C719 TRANSISTOR C236 TRANSISTOR BC 141 transistor BC SERIES TRANSISTOR BC 140 transistor BC 153 a TRANSISTOR BC140 c236 transistor BC transistor series
Text: ESC » m ö23SbQS 0Q043.04 2 « S I E G , NPN Silicon Transistors SIEMENS AKTIENGESELLSCHÂF 3c 140 BC 141 BC 140 and BC 141 are epitaxial NPN silicon transistors in TO 39 case 5 C 3 OIN 41873 . The collector is electrically connected to the case. The transistors are intended for use in AF
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23SbQS
0Q043
60203-X
60203-X140-V6
60203-X140-P
140/BC160
62702-C228-S2
62702-C719
transistor BC 153
transistor C719
TRANSISTOR C236
TRANSISTOR BC 141
transistor BC SERIES
TRANSISTOR BC 140
transistor BC 153 a
TRANSISTOR BC140
c236 transistor
BC transistor series
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BA3505F
Abstract: BA3503F 3803F BA3502F K777 A3505 BA3505
Text: i [ —z r j IC /I C s for A udio A pplications BA3502F/BA3503F/BA3504F/BA3505F ROHM CO LTD 4QE D E 7 0 2 0 ^ 0Q0437S b E3RHM — 3502 [F/@Â3 i BÂ BA3 5 0 4 F/B& Ifï 3 v T ?a T ; u y ,; / \ ° 7 - ^ > y 3V D ual P re -P o w e r A m p lifie r 3 5 0 7 = 7 7 -2 /
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BA3502Ã
BA3502F/BA3503F/BA3504F/BA3505FIÃ
BA3502FÃ
BA3503F
BA3502F/BA3503F/BA3504F/3505F
BA3502F/BA3503F/BA3504F/BA3505F
000437S
BA3502F/BA3503F/BA3504F
BA3505F
3803F
BA3502F
K777
A3505
BA3505
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IC 3-8 decoder 74138 pin diagram
Abstract: full adder using ic 74138 circuit diagram for IC 7483 full adder 7483 4 bit binary full adder circuit diagram for 7483 ic 7442 encoder ttl ic 7485 transistor KD 617 0850R 74283 IC pin diagram FOR 8 BIT BINARY MB5000
Text: _ HMHS electronic June 1992 ASIC HI-REL DATA SHEET RADIATION TOLERANT LIBRARY MBRT GATE ARRAY SERIES - 2\a!2 METAL LAYERS MB 0850RT - MB 1300RT - MB 2000RT - MB 2700RT - MB 3200RT MB 4000RT - MB 5000RT - MB 6600RT - MB 7500RT FEATURES . TOTAL DOSE up to 70 krads Si
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0850RT
1300RT
2000RT
2700RT
3200RT
4000RT
5000RT
6600RT
7500RT
D4401
IC 3-8 decoder 74138 pin diagram
full adder using ic 74138
circuit diagram for IC 7483 full adder
7483 4 bit binary full adder circuit diagram for 7483
ic 7442 encoder
ttl ic 7485
transistor KD 617
0850R
74283 IC pin diagram FOR 8 BIT BINARY
MB5000
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HY5116100B
Abstract: No abstract text available
Text: HY5116100B Series -HYUNDAI 16Mx 1-bit CMOS DRAM DESCRIPTION The HY5116100B is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. TheHY5116100B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5116100B
TheHY5116100B
1AD41-00-MAY9S
4b750Ã
0GG435b
HY5116100BJ
HY5116100BSLJ
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PDF
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Untitled
Abstract: No abstract text available
Text: @ «pr SIGNAL PROCESSING TECHNOLOGIES SPT9687 DUAL ULTRAFAST VOLTAGE COMPARATOR FEATURES APPLICATIONS • • • • • • • • • • • • Propagation Delay <2.3 ns Propagation Delay Skew <300 ps Low Power: 185 mW Low Offset ±3 mV Low Feedthrough and Crosstalk
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SPT9687
SPT9687
AD9687.
SPT9687SIN
SPT9687SIP
SPT9687SIC
SPT9687SIS
SPT9687SCU
G0043Ã
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BA3514
Abstract: BA3514AF BA3513AF AUTO RADIO TAPE PLAYER BA3513afic T-77-21
Text: t f —x - f 00043flT b BRHM 40E D ROHM CO LTD BA3513AF/BA3514AF IC /IC s for Audio Applications 7 -7 7 -2 ./ 3V 9 j l 7JU7° V A°7 - T > 7° 3V Dual Prepower Amplifier BJk3S14JkF • /D im ensions U n it: mm BA3513AF/BA3514AF ( i , * ii-§ -s is s 1 1 ^ r
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00Q43flcÃ
BA3513AF/BA3514AF
BA3513AF/BA3514AF(
BA3513AFIC
BA3513AF
whBPF20
20kHz
12dBm
BA3514
BA3514AF
AUTO RADIO TAPE PLAYER
T-77-21
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PDF
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hy5116100
Abstract: No abstract text available
Text: »HYUNDAI H Y 5 1 1 6 1 O O A S e r ie s 16M X 1 -bit CMOS DRAM DESCRIPTION The H Y 5 1 1 6 1 0 0 A isth e new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5116100A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide
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HY51161OOA
HY5116100A
HY51161
C1801
4b750Ã
1AD19-10-MAYÃ
HY5116100AJ
HY51161OOASLJ
hy5116100
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RN5VM1xxC Series
Abstract: No abstract text available
Text: KM Li-Ion BATTERY PROTECTOR RN5VM1 xxC/D Series OUTLINE T he RN5VM Series are protection ICs for over-charge/discharge of rechargeable one-cell Lithium-ion Li+ batteries by CMOS process. The RN5VM Series can detect over-charge/discharge of Ii+ one-cell and excess load current, further include a short cir
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Untitled
Abstract: No abstract text available
Text: 3-INPUT VIDEO SWITCH NJM2249 T he NJM 2249 is 3-input video sw itch for video an d a u d io signal. O ne in p u t term inal has sin k -ch ip clam p function an d so it is ap p lied to fixed D C level o f video signal. T w o o th er in p u t term in als are tra n sisto r base in p u t for lu m in an t
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NJM2249
10MHz.
0G04341
0Q04343
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Untitled
Abstract: No abstract text available
Text: S P SPT7920 T SIGNAL PROCESSING TECHNOLOGIES 12-BIT, 10 MSPS, TTL, A/D CONVERTER FEATURES APPLICATIONS • M onolithic • 12-Bit 10 MSPS Converter • 66 dB S N R @ 1 MHz Input • On-Chip Track/Hold • Bipolar ±2.0 V Analog Input • Low Power 1.1 W Typical
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SPT7920
12-BIT,
12-Bit
T7920
12-bit
SPT7920SCJ
SPT7920SCQ
0240e
0Q04304
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PDF
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8D139
Abstract: bd139 B0139 TRANSISTOR BD 137 transistor BD 378 TRANSISTOR BD 137-10 transistor a110 B0137 D106-V2 BD135
Text: 2SC D • 053SbOS 0004332 4 « S I E G ^ - NPN Silicon Transistors ■ T ^ Ï'O T — BD 135 BD 137 SIEMENS AKTIEN6ESELLSCHAF- BD 139 For AF driver and ou tp u t stages o f m edium performance BD 135, BD 137, and BD 139 are epitaxial NPN silicon planar transistors in TO 126
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fl23SbQS
135/BD
137/BD
BD135,
B0137,
B0139
BD137,
BD139
BD136.
8D139
bd139
B0139
TRANSISTOR BD 137
transistor BD 378
TRANSISTOR BD 137-10
transistor a110
B0137
D106-V2
BD135
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EZ1585
Abstract: EZ1585D EZ1585DCT
Text: R £ ïïïïM g [X ] 6.0 AMP LOW DROPOUT POSITIVE VOLTAGE REGULATORS TEL: 805-498-2111 FEATURES • • • • • • • • • EZ1585D FAX: 805-498-3804 DEVICE SELECTION GUIDE Low dropout performance, 1.3V max. Full current rating over line and temperature
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EZ1585D
O-220
EZ1585
O-220
a131131
0QD4354
EZ1585D
EZ1585DCT
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PDF
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Untitled
Abstract: No abstract text available
Text: [MïïTlC^K] 150mA ADJUSTABLE VOLTAGE REGULATOR TEL: 805-498-2111 PRELIMINARY DATA NOVEMBER 1996 FEATURES • • • • • • Guaranteed 150mA Current Adjustable Output Voltage - 1.24V to 29V Accurate 5V output @150mA Low Dropout Voltage - 350-400mV @ 150mA
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150mA
150mA
350-400mV
LP2951,
LP2951A,
MIC2951
AS2951A
400pA
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PDF
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b0615
Abstract: b0613 bo 615 8 HJC bd 426 BD 615 transistors q62702 BD PNP siemens 611 b0617
Text: 2SC D • ô23StQS 000437^ û W S IE f i , NPN Silicon Epibase Transistors 7"’- 3 3 - 07 - 25C 0 *3 7 9 BD 611 0 - SIEMENS AKTIENGESELLSCHAF BD 619 The transistors BD 6 1 1 , BD 6 1 3 r BD 6 1 5 , BD 6 1 7 , and BD 6 1 9 are NPN silicon epibase
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--25C
BD618,
Q62702-D946
Q62702-D948
Q62702-D950
Q62702-D952
Q62702-D954
611/BD
613/BD
S250C
b0615
b0613
bo 615
8 HJC
bd 426
BD 615 transistors
q62702
BD PNP
siemens 611
b0617
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PDF
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DDD4327
Abstract: HJM2247A NJM2247 NJM2247A NJM2247B NJMZ247B MNRB
Text: VIDEO COLOR SUPER IMPOSER NJM2247A/B NJM 2247 A /B is the m ulti-functional color superim poser IC for video base b and Y . R -Y , B-Y . V arious type o f Y, R-Y , B-Y o u tput signals can be m ade by the digital controlled signals. T he signal control at the base band, m ade it
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NJM2247A/B
NJM2247
300mW
D00433t>
DDD4327
HJM2247A
NJM2247A
NJM2247B
NJMZ247B
MNRB
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PDF
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TCI a7s
Abstract: marking z7s A17CC SD16 TL413 KD453 AK2376 TE5 marking
Text: ASA H I KASEI [AK2376] AK 2 3 7 6 AKM AUDIO INTERFACE . LSI FOR D I G I T A L CELLULAR huül u F e a t u res □ □ □ □ □ □ □ □ □ □ □ □ □ Suitable for audio interface of digital cellular 14bit linear codec TX & RX filter, compliant with CCITT recommendation
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AK2376]
14bit
48pin
KD045300>
10004Q5
AK2376
TCI a7s
marking z7s
A17CC
SD16
TL413
KD453
TE5 marking
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PDF
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Untitled
Abstract: No abstract text available
Text: S ta n d a rd P r o d u c t _w_ PMC I/ l ^ I PMC-Sierra, Inc. ISSUE 3 PM7375 LASAR-155 LOCAL A m SAR & PHYSICAL LAYER 1. F E A T U R E S • Single-chip Peripheral Component Interface PCI Bus Local ATM Network Interface using SONET/SDH framing at 155.52 or 51.84 Mbit/s and ATM
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PM7375
LASAR-155
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PDF
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KA8401
Abstract: switch on off
Text: SAMSUNG SE MI CONDU CT OR INC Tö Ì>É| T T t m M H 0004304 7 | •. • • ••: - : • T ~ “7*7> *2 -/ - KA8401 LINEAR INTEGRATED CIRCUIT SWITCHLESS RECORDING/ PLAY BACK AMPLIFIER The KA8401 is a monolithic integrated circuit in a 16-lead zigzag In
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KA8401
KA8401
16-lead
switch on off
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PDF
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G0D4322
Abstract: No abstract text available
Text: ÚUALITY TECHNOLOGIES CORP 5?E D ?Mbbû51 DD Ü 43 EG •ûTY European “Pro Electron” Registered T y p e s _ CNY51 Optoisolator GaAs Infrared Emitting Diode and NPN — A— Silicon Phototransistor g 3 o 4 FEATURES: 1 ITOPVIEW » SYMJUl -VW A c D
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CNY51
CNY51
0Q04323
G0D4322
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PDF
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Untitled
Abstract: No abstract text available
Text: SED1181 CMOS DOT MATRIX EXTENSION LCD DRIVER S-MOS Systems, I nc. • 2460 North First Street • San Jose, CA 95131 • Tel: 408 922-0200 • Fax: (408) 922-0238 • I 7R32R0R 0 0 0 4 3 2 7 027 ■ THIS PAGE INTENTIONALLY BLANK S-MOS Systems, Inc. • 2460 North First Street • San Jose, CA 95131 • Tel: (408) 922-0200 • Fax: (408) 922-0238
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SED1181
7R32R0R
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PDF
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high Q notch filter
Abstract: adjustable Q notch filter ECG924 ECG924M P793
Text: PHILIPS E C G INC 17E • bhSBTEfl Q0D43S1 0 ■ ECG924, ECG924M Sem iconductors Features • Input current: 10nA m ax. over temperature range • Sm all signal bandwidth: 20MHz • S le w rate: 30V / m» • Supply voltage range: ± 5 V to ±18V Voltage Follower
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Q0D43S1
ECG924,
ECG924M
20MHz
ECG924
ECG924M
high Q notch filter
adjustable Q notch filter
P793
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