NEC 4217400-60
Abstract: nec 4216400 4217400-60 4216400 NEC+4217400-60
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT -//¿PD42S16400,4216400,42S17400,4217400 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description The ¿/PD42S16400, 4216400, 42S17400, 4217400 are 4,194,304 words by 4 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.
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uPD42S16400
uPD4216400
uPD42S17400
uPD4217400
/iPD42S16400,
42S17400
26-pin
VP15-207-2
NEC 4217400-60
nec 4216400
4217400-60
4216400
NEC+4217400-60
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PD42273
Abstract: No abstract text available
Text: SEC l i PD42273 Dual-Port Graphics Buffer NEC Electronics Inc. Description Features The ¿/PD42273 is a dual-port graphics buffer equipped with a 256Kx 4-bit random access port and a 512 x 4-bit serial read port. The serial read port is connected to an internal 2048-bit data register through a 512 x 4-bit
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uPD42273
/PD42273
256Kx
2048-bit
PD42273
JJPD42273
iPD42273
PD42273
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PD424256
Abstract: ud41464 uPD41256-12
Text: N E C ELECTRONICS INC 3GE D • t.427525 OOSSltQ 2 ■ NEC MEMORY PRODUCTS Dynamic R A M s Maximum Power Dissipation |mW Accesi Time ns) Cycle Time (ns) Supply Voltage Standby Active Package (Note 1) Pins /JPD41256-10 //PD41256-12 256K x 1 (page) NMOS 100
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uPD41256-10
uPD41256-12
uD41464-10
uPD41464-12
uPD421000-70
uP0421000-80
uPD421000-10
uPD421000-12
uPD42100
256Kx4
PD424256
ud41464
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SIMM 30-pin
Abstract: No abstract text available
Text: \T J7 2 *^ ^ MC-421000C9 1,048,576 x 9-BIT cm o s d y n a m ic ra m m o d u le w NEC Electronics Inc. PRELIMINARY INFORMATION Description Pin Configurations T he M C -421000C 9 is a static-colum n 1,048,576-w ord by 9-b it dynam ic RAM m odule designed to operate
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MC-421000C9
576-w
-421000C
juPD421002
C-421000C9
SIMM 30-pin
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4800L
Abstract: IC-3052B uPD424800 UPD42S480
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT juPD42S4800L, 424800L 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The /¿PD42S4800L, 424800L are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.
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uPD42S4800L
uPD424800L
PD42S4800L,
424800L
PD42S4800L
28-pin
//PD42S4800L-A70,
424800L-A70
/JPD42S4800L-A80,
4800L
IC-3052B
uPD424800
UPD42S480
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NEC 4218165-60
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / / ¿ P D 4 2 S 18 1 6 5 , 4 2 1 8 1 6 5 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The ¿¿PD42S18165, 4218165 are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EDO.
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16-BIT,
uPD42S18165
uPD4218165
42S18165
PD42S18165,
50-pin
42-pin
/iPD42S16165-50,
juPD42S18185-60
/PD42S18165-70,
NEC 4218165-60
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tcam
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUII _ _ _ _ _ _ _ _ _ _ _ _ _ /¿ P D 4 2 1 1 7 5 1 M-Brr DYNAMIC RAM 64K-W0RD BY 16-BIT, HYPER PAGE MODE EDO , BYTE WRITE MODE Description The ¿¡PD421175 is a 65,536 words by 16 bits CMOS dynamic RAM with optional hyper page mode (EDO).
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64K-W0RD
16-BIT,
uPD421175
fiPD421175
44-pin
40-pin
tPD421175-25
PD421175-30
JIPD421175-35
68processes:
tcam
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nec 4216400
Abstract: 7400g PD4216400
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ /¡uPD42S16400,4216400,42S17400,4217400 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description The JJPD42S16400, 4216400, 42S17400, 4217400 are 4,194,304 words by 4 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.
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uPD42S16400
uPD4216400
uPD42S17400
uPD4217400
JJPD42S16400,
42S17400,
PD42S16400,
42S17400
26-pin
nec 4216400
7400g
PD4216400
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707j
Abstract: XC002 D42S161
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ju P D 42S 16 16 5 , 4 2 16 16 5 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description T h e /¿PD 42S16165, 421 6 1 6 5 a re 1,048,576 w o rd s b y 16 b its C M O S dy n a m ic R A M s w ith o p tio nal ED O .
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16-BIT,
42S16165,
50-pin
42-pin
IR35-207-3
VP15-207-3
707j
XC002
D42S161
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Untitled
Abstract: No abstract text available
Text: Selection Guide Part Number 64M DRAM |iPD42 64 40 5 LE - A 70 NEC CMOS Dynamic RAM-64M Dynamic RAM, Refresh Cycle 64 : 8K Refresh 65 : 4K Refresh Organization-40 : x 4 80 : x 8 16 : x ¡6 Function M ode-0 : Fast-Page Mode
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uPD4264405LE-A70
RAM--------64M
rganization----------------------------40
0PD42
MPD42
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EI marking
Abstract: D42S17805L-A50
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT ¿ ^ 0 4 2 5 1 7 8 0 5 1 ., 4 2 1 7 8 0 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, EDO Description The ,uPD42S17805L, 4217805L are 2,097,152 words by 8 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
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uPD42S17805L
uPD4217805L
42S17805L
iPD42S17805L,
4217805L
28-pin
IR35-207-3
VP15-207-3
EI marking
D42S17805L-A50
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42s4260
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PP42S4260AL, 424260AL 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /¿PD42S4260AL, 424260AL are 262,144 words by 16 bits CMOS dynamic RAMs. The fast page mode and
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PP42S4260AL,
424260AL
16-BIT,
uPD42S4260AL
uPD424260AL
PD42S4260AL
44-pin
40-pin
PD42S4260AL-A60,
424260AL-A60
42s4260
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4096x512x8
Abstract: upd4216805 TAA 310a
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / /¿P D 4 2 1 6 8 0 5 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, HYPER PAGE MODE DESCRIPTION The ^PD4216805 is a 2 097 152 w ords by 8 bits dynamic CMOS RAM w ith optional hyper page mode. Hyper page mode is a kind of the page mode and is useful for the read operation.
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uPD4216805
jiPD4216805
28-pin
28-pln
iPD4216805-50
/iPD4216805-60
/iPD4216605-70
735t8g
043to
016tg
4096x512x8
TAA 310a
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2P4N
Abstract: nec 2p4n R06S Marking M60 NEC 4217405-60
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT //PD42S17405, 4217405 16 M-BIT DYNAMIC RAM 4M-WORD BY 4-BIT, HYPER PAGE MODE EDO D e sc rip tio n The /iPD42S17405,4217405 are 4,194,304 words by 4 bits CMOS dynamic RAMs with optional hyper page mode (EDO). Hyper page mode (EDO) is a kind of the page mode and is useful for the read operation.
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uPD42S17405
uPD4217405
/iPD42S17405
/tPD42S17405
26-pin
/fPD42S17405-50,
jfPD42S17405-60.
2P4N
nec 2p4n
R06S
Marking M60
NEC 4217405-60
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Untitled
Abstract: No abstract text available
Text: NEC M O S INTEGRATED CIRCUIT /¿ P D 4 2 1 6 8 0 5 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, HYPER PAGE MODE DESCRIPTION The /iPD4216805 is a 2 097 152 words by 8 bits dynamic CMOS RAM with optional hyper page mode. Hyper page mode is a kind of the page mode and is useful for the read operation.
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/iPD4216805
pPD4216805
28-pin
fiPD4216805-50
//PD4216805-60
b427525
00S4T3S
PD4216805
/iPD4216805.
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _/ ¿¿PD424400-L 4 M-BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE Description The ¿iPD424400-L is a 1 048 576 words by 4 bits dynamic CMOS RAM. The fast page mode capability realize high speed access and low power consumption.
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iPD424400-L
26-pin
PD424400-60L
iiPD424400-70l
0PD4244OO-8OL
/iPD424400-10L
VP15-207-2
b457S25
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42S16160
Abstract: 16160G NEC 4216160
Text: _ DATA SHEET_ _ / MOS INTEGRATED CIRCUIT ^PD42S16160,4216160,42S18160,4218160 16 M-BIT DYNAMIC BAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE D escription The f/PD42S16160, 4216160, 42S18160, 4218160 are 1 048 576 words by 16 bits dynamic CMOS RAM s.
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uPD42S16160
uPD4216160
uPD42S18160
uPD4218160
16-BIT,
f/PD42S16160,
42S18160,
PD42S16160
42S18160
50-pin
42S16160
16160G
NEC 4216160
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT juPD42S16405L, 4216405L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE DESCRIPTION The mPD42S16405L, 4216405L are 4 194 304 words by 4 bits dynamic CMOS RAMs with optional hyper page mode. Hyper page mode is a kind of page mode and is useful for the read operation.
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uPD42S16405L
uPD4216405L
mPD42S16405L,
4216405L
PD42S16405L,
26-pin
/jPD42S
16405L-A60,
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BIPD
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ffP P 4264165, 4265165 64 M-BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, HYPER PAQE MODE EDO , BYTE READ/WRITE MODE D escription The /iPD4264165,4265165 are 4,194,304 words by 16 bits CMOS dynamic RAMs with optional hyper page mode
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16-BIT,
uPD4264165
50-pin
jjPD4264165-A50
jjPD4265165-A50
/jPD426416S-A60
iPD4265165-A60
-60-7JF
PD4264165,
426St65
BIPD
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nec hf 324
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT jiPD42S16800L, 4216800L, 42S178Q0L, 4217800L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The /iPD42S16800L, 4216800L, 42S17800L, 4217800L are 2,097,152 words by 8 bits CMOS dynamic RAMs. The
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uPD42S16800L
uPD4216800L
uPD42S178Q0L
uPD4217800L
/iPD42S16800L,
4216800L,
42S17800L,
4217800L
iPD42S16800L,
42S17800L
nec hf 324
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