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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: BEE D • 023b3SQ 0Glb712 3 H S I P BCX54 ■BCX 56 NPN Silicon AF Transistors SIEMENS/ SPCL-. SEMICONDS • • • • For A F driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: B C X 51-•• B C X 53 PNP	OCR Scan	023b3SQ 0Glb712 BCX54 23b32d GQ1L71S	PDF
DIGITAL GATE EMULATOR USING 8085 Abstract: 8086 microprocessor book by A K RAY 180 nm CMOS standard cell library AMI IC1732 DL021 M91C360 ami 0.6 micron 3682D ami equivalent gates ic/TDA7388 equivalent Text: Library Characteristics il A M I AMERICAN MICROSYSTEMS, INC. L ib ra ry Characteristics AMI6G 0.6 micron CMOS Gate Array AMI6Gx Gate Array Family Overview U S A B LE G ATES1 PART NUM B ER2 B O N D PAD S I/O C E L L S 2 LM 3 LM AMI6G4 1.39 1.85 44 52 AMI6G16S	OCR Scan	AMI6G16S AMI6G33S AMI6G41S AMI6G70S AMI6G106S AMI6G150S AMI6G202S AMI6G333 AMI6G471 AMI6G603 DIGITAL GATE EMULATOR USING 8085 8086 microprocessor book by A K RAY 180 nm CMOS standard cell library AMI IC1732 DL021 M91C360 ami 0.6 micron 3682D ami equivalent gates ic/TDA7388 equivalent	PDF
CXK58257 Abstract: cxk56257b Text: SONY CXK58257BTM/BM -7QLLB/10LLB 32768-word x 8-bit High Speed CMOS Static RAM Description The CXK58257BTM/BM is 262,144 bits high speed CMOS static RAM organized as 32,768 words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data	OCR Scan	CXK58257BTM/BM -7QLLB/10LLB 32768-word CXK58257 CXK58257BTM CXK58257BM CXK58257BTM/BM 70LLB 10LLB cxk56257b	PDF
Untitled Abstract: No abstract text available Text: SAMSUNG ELECTRONICS INC b?E D • Vlhima G01b7Db 22T H S M G K PRELIMINARY KM428C258 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION - Dual port A rchitecture 256K x 8 b its RAM port 512 x 8 bits SAM port ■ Performance range : The Samsung KM428C258 is a CMOS 256K x 8 bit Dual	OCR Scan	G01b7Db KM428C258 KM428C258 110ns 130ns 150ns 40-PIN 40/44-PIN	PDF