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    Text: N AMER PHILIPS/DISCRETE bRE D • bbS3R31 DDBObBO T42 « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		bbS3R31 O220AB BUK454-600B 0D3Db34 PDF