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MELTRIC Corporation 513P0D30473 CONN BACKSHELL SZ3 BLUE
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DigiKey	513P0D30473	Bulk			1	1 $68.91 10 $68.91 100 $68.91 1000 $68.91 10000 $68.91	Buy Now
RS	513P0D30473	Bulk		3 Weeks	1	1 $69.6 10 $69.6 100 $69.6 1000 $69.6 10000 $69.6	Get Quote
Vishay Dale EB41-S0D304XF CONN EDGE DUAL FMALE 60POS 0.100
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DigiKey	EB41-S0D304XF	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Dale EB41-S0D3040X CONN EDGE DUAL FMALE 60POS 0.100
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	EB41-S0D3040X	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Samtec Inc TCSD-10-D-304.80-01-F-N Cable Assembly Flat Ribbon 7.741m 28AWG 20 POS IDC Connector to 20 POS IDC Connector SKT-SKT IDT-IDT Bulk - Bulk (Alt: TCSD-10-D-304.80-0) Free Sample
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Avnet Americas	TCSD-10-D-304.80-01-F-N	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Sager	TCSD-10-D-304.80-01-F-N					1 - 10 - 100 - 1000 - 10000 -	Buy Now
Samtec Inc IDSD-10-D-30.48-G Cable Assembly Flat Ribbon 0.774m 28AWG 20 POS IDC Connector to 20 POS IDC Connector SKT-SKT IDT-IDT Bulk - Bulk (Alt: IDSD-10-D-30.48-G) Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	IDSD-10-D-30.48-G	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Master Electronics	IDSD-10-D-30.48-G					1 - 10 $15.25 100 $9.84 1000 $8.88 10000 $7.83	Buy Now
Sager	IDSD-10-D-30.48-G					1 - 10 - 100 - 1000 - 10000 -	Buy Now

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0D304 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: ADV MICRO MEMORY MAE D Q257S2Û 0D304Ô4 b IA M D 4 T -4 6 -1 3 -2 9 Advanced Micro Devices Am27C2048 2 Megabit (131,072 x 16-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ Fast access time -v 100 ns Low power consumption - 25 mA typical CMOS standby current	OCR Scan	Q257S2Ã 0D304Ã Am27C2048 16-Bit) -40-pin 44-pin D257S2Ã D03DMn 05-006B	PDF
16C256 Abstract: KM416C256DJ Text: KM4 16 C 2 5 6 D J ELECTRONICS CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time	OCR Scan	1C256D 256Kx16 40SOJ KM416C256DJ 16C256 KM416C256DJ	PDF
Untitled Abstract: No abstract text available Text: / CYPRESS PRELIMINARY W150 440BX AGPset Spread Spectrum Frequency Synthesizer Features Table 1. Mode Input Table • Maximized EMI suppression using Cypress’s Spread Spectrum Technology • Single chip system frequency synthesizer for Intel 440BX AGPset	OCR Scan	440BX 48-MHz 24-MHz G03D4Ã	PDF
Zl11 Abstract: A12C Text: ADV MI CRO MEMORY 4ÔE » 0E5755Ö GÜ3 D4 b ö ö • AÎ1DM T—46—13-29 Advanced Micro Devices Am27C020 2 Megabit (262,144 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ 100% Flashrlte programming -typical programming time of 30 seconds Fast access time	OCR Scan	0E5755Ã T-46-13-29 Am27C020 28-pin 32-pln 27C020 DG304Ã 10205-006B Zl11 A12C	PDF
L3103L Abstract: No abstract text available Text: PD - 9.1617B International I R Rectifier IR F 33 15S /L PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF3315S • Low-profile through-hole (IRF3315L) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated	OCR Scan	1617B IRF3315S) IRF3315L) 4A55452 L3103L	PDF
D0304 Abstract: T-46 Text: ADV MI CRO MEMORY 4ÖE 02S7S2Ö J> 003D4S3 h • AMD4 T - 46-13-29 Advanced Micro Devices A m 2 7 C 1 0 2 4 1 Megabit (65,536 x 16-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ High Speed Flashrite programming ■ Fast access tim e — 100 ns ■ Low power consumption:	OCR Scan	02S7S2Ã 003D4S3 T-46-13-29 Am27C1024 16-Bit) 40-pin 0D304L 06780-009E D0304 T-46	PDF
BUK436-100A Abstract: BUK436-100B Text: N AMER P H I L I P S / D I S C R E T E b*lE D • bbSa^Bl 0a3QMb0 T l f l ■ APX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	BUK436-100A/B -100A -100B 00304b4 BUK436-1OOA/B BUK436-100A BUK436-100B	PDF
am27h10 Abstract: No abstract text available Text: ADV MIC RO M E MO RY MfiE D • Ü25752Ô □ D 3 0 l)13 5 ■ A M D 1» T-46-13-29 A m 2 7 H 0 1 0 Advanced 1 Megabit (131,072 x 8-Bit) High Speed CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Industry's fastest -45ns 1 megabit CMOS EPROM ■ Versions available in industrial and military	OCR Scan	T-46-13-29 -45ns Am27C010 Am27H010 withtheAm27C010 KS000010 2750-006A am27h10	PDF
Untitled Abstract: No abstract text available Text: bRE D N AMER PH ILIP S /D IS C R E TE • bb53R31 00304bQ Rlfl ■ P hilips Sem ico nd uctors Pro d uct Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	bb53R31 00304bQ BUK436-100A/B BUK436 -100A -100B 0Q304b4	PDF
optocoupler ic 6N136 Abstract: OPTOCOUPLER 6N136 ic 6n136 6N136 IC philips 3120 6N135 6N136 MCB375 sot97f Text: PHILIPS MIE D m ?110a2b 0030400 3 BiPHIN INT ER NATIONAL - p v ; - ? 3 P h ilip s S e m ico n d u cto rs P ro d u c t s p e c ific a tio n High-speed optocouplers 6N135/6N136 FEATURES • Short propagation delay times • Low saturation voltage • High transient immunity	OCR Scan	110a2b 6N135/6N136 6N135 6N136) 6N136 OT97F optocoupler ic 6N136 OPTOCOUPLER 6N136 ic 6n136 6N136 IC philips 3120 MCB375 sot97f	PDF
Untitled Abstract: No abstract text available Text: KM4 1 6C2 5 4 DT CMOS D R AM ELECTRONICS 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,	OCR Scan	256Kx16 KM416C254DT 00304flb	PDF
Untitled Abstract: No abstract text available Text: KM416C1204BT CMOS D R A M ELECTRONICS 1 M x 1 6 B i t CMOS Dynamic HAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power	OCR Scan	KM416C1204BT 1Mx16 416C1204BT D03D425 DD3G42h	PDF
CNW85 Abstract: optocoupler ic MBB037 Optocoupler 601 philips 23 BS415 BS7002 CNW84 VDE0884 Text: PH ILIP S 41E INTERNATIONAL 7iiQôab D oa3aHsa b m p h i n 7 " - v / - 8 3 P ro d u c t s p e c ific a tio n P h ilip s S e m ico n d u cto rs J C N W 8 4/C N W 85 H eavy duty o p to co u p lers FEATURES • Minimum 2 mm isolation thickness between emitter and	OCR Scan	711005b CNW84/CNW85 CNW84 CNW85 optocoupler ic MBB037 Optocoupler 601 philips 23 BS415 BS7002 VDE0884	PDF
KM416C254DJ-7 Abstract: C254D VL 7143 Text: KM4 1 6 C 2 5 4 D J ELECTRONICS CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,	OCR Scan	6C254D 256Kx 256Kx16 T7JSDT27W nraEEES55BM5 KM416C254DJ 003045b KM416C254DJ-7 C254D VL 7143	PDF

Untitled Abstract: No abstract text available Text: M.S. KENNEDY CORP. DUAL HIGH POWER OP-AMP 2541 8170 Thompson Road • Cicero, N.Y. 13039 315 699-9201 FEATURES: • High Output Current - 10 Amps Peak • Wide Power Supply Range - ±10V to ±40V • On Board Current Limit • Fet input • Isolated Case	OCR Scan	2541B Mil-H-38534	PDF