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    Microchip Technology Inc MCP40D17T-103E-LT

    IC DGTL POT 10KOHM 128TAP SC70-6
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    DigiKey MCP40D17T-103E-LT Digi-Reel 15,618 1
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    MCP40D17T-103E-LT Cut Tape 15,618 1
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    MCP40D17T-103E-LT Reel 9,000 3,000
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    Microchip Technology Inc MCP40D17T-503E-LT

    IC DGTL POT 50KOHM 128TAP SC70-6
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    DigiKey MCP40D17T-503E-LT Digi-Reel 9,715 1
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    MCP40D17T-503E-LT Cut Tape 9,715 1
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    MCP40D17T-503E-LT Reel 6,000 3,000
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    Microchip Technology Inc MCP40D17T-502E-LT

    IC DGTL POT 5KOHM 128TAP SC70-6
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    DigiKey MCP40D17T-502E-LT Digi-Reel 8,716 1
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    MCP40D17T-502E-LT Cut Tape 8,716 1
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    MCP40D17T-502E-LT Reel 6,000 3,000
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    Microchip Technology Inc MCP40D17T-104E-LT

    IC DGT POT 100KOHM 128TAP SC70-6
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    DigiKey MCP40D17T-104E-LT Cut Tape 4,017 1
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    MCP40D17T-104E-LT Digi-Reel 4,017 1
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    MCP40D17T-104E-LT Reel 3,000 3,000
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    AZ Displays Inc ATM0350D17-T

    GRAPHIC DISPLAY TFT RGB 3.5"
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    DigiKey ATM0350D17-T Box 7 1
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    0D17T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GES5815

    Abstract: GES5818 17975 GES5316 GES5616 GES5814 GES5816 GES5817 GES5819
    Text: G □1 E SOLID STATE DE I 3fl7SDfll 0D17T74 3 01E 17974 3875081 G E SOLID STATE D T - ¿ > 7 -2-/ Signal Transistors_ GES5814, GES5815, GES5816 GES5817, GES5818, GES5819 Silicon Transistors Features: • Excellent gain linearity over wide range of collector current: ¿ 5 0 0 mA


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    PDF GES5814, GES5815, GES5816 GES5817, GES5818, GES5819 85tfRH GES5816, GES5815 GES5818 17975 GES5316 GES5616 GES5814 GES5817 GES5819

    2n3905A

    Abstract: 2N4125 2N4125 NPN
    Text: G E SOLI» STATE □1 f ' ''' OIE‘“ "17927 3875081 G E SOLÏD'STATE D E | 3 Û 7 S D Û 1 0D17TS7 5 | D Signal Transistors 2N4123, 2N4124, 2N4125, 2N4126 T •2*5-'? BASE C U RR EN T lB - m A C O LLE C T O R C U R R E N T ( lc ) - m A 92CS-42777 Fig. 9 - Typicalbase-to-emittersaturation voltage characteristics for


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    PDF 0D17TS7 2N4123, 2N4124, 2N4125, 2N4126 92CS-42777 2N3905and 2N3906. 10--Typical 2N3905 2n3905A 2N4125 2N4125 NPN

    D7ZS

    Abstract: 2N681 2N681-2N692 2N692 2N689 2N682 2N683 2N684 2N687 2N688
    Text: 6 E SOLI D 3875081 Üi STATE G E SOLID STATE ÖE~| 3ß7SDfll 0D17tt.t 3 01E 17666 Silicon Controlled ¡*3 7* 2N681-2N692 File Number 96 TERMINAL DESIGNATIONS 25-A Silicon Controlled Rectifiers


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    PDF 0017LLb 2N681-2N692 RCA2N681-2N692 O-208AA 2N681-2N692 N681-2N692. 2N681-2N692. D7ZS 2N681 2N692 2N689 2N682 2N683 2N684 2N687 2N688

    2N3906

    Abstract: 2N4125 42761 2N3905 2N4123 2N4124 2N4126 MCS-4277B zc842t70 2n3905A
    Text: G □1 E SOLI» STATE f 3875081 G E SOLÏD'STATE DE|3Û7SDÛ1 ' ''' OIE’“ "17927 0D17TS7 D Signal Transistors 2N4123, 2N4124, 2N4125, 2N4126 r - BA SE C U R R E N T l B - m A C O LLE C T O R C U R R E N T ( l c ) - m A 92CS-42777 fig . 9 - Typical basB-lo-emitlersaturalion voltage characteristics lor


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    PDF 2N4123, 2N4124, 2N4125, 2N4126 92CS-42777 2N3905and 2N3906. 2N3905. 2N3905 2N3906 2N4125 42761 2N4123 2N4124 2N4126 MCS-4277B zc842t70 2n3905A

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5 14402A/AL_ 1,048,576-Word x 4-Bit DYNAMIC RAM : STA TIC COLUM N MODE TYPE DESCRIPTION The MSM514402A/AL is a new generation dynam ic RAM organized as 1,048,576-w ord x 4-bit. The technology used to fabricate the MSM514402A/AL is OKI's CMOS silicon gate process technology.


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    PDF 4402A/AL_ 576-Word MSM514402A/AL 576-w cycles/16ms, cycles/128ms b7S424D D0171Ã

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI <Dig./Ana. INTERFACE M 51995P.FP SWITCHING REGULATOR CONTROL DESCRIPTION M51995 is the primary switching regulator controller which is especially designed to get the regulated DC voltage from AC power supply. This 1C can directly drive the MOS-FET w ith fast rise and


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    PDF 51995P M51995 G17T1C

    TA7378P

    Abstract: TA8110AP TA7370P ta7378 audio center va 801 amplifier Capacitor 47 JFK ta7767 TA7787AP TA8110AF sumida ift coil
    Text: TOSHIBA-, ELECTRONIC 05 9097247 TOSHIBA. ì Èf| T0ci7247 DD17b3fe. 1 ELECTRONIC 02E 17636 TA7787AP/AF TA8110AP/AF i T- 77- 05-01 AM/FM IF SYSTEM Unit in mm TA7787AP/AF, TA8110AP/AF are the AM/FM IF SYSTEM ICs TA7 7 8 7AP TA8110AP 16 which are designed for Radio Cassette Players and


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    PDF DD17b3fe. TA7787AP/AF TA8110AP/AF T-77-05-01 TA7787AP/AF, 80dBA 60dBfl TA7378P TA8110AP TA7370P ta7378 audio center va 801 amplifier Capacitor 47 JFK ta7767 TA7787AP TA8110AF sumida ift coil

    Untitled

    Abstract: No abstract text available
    Text: Whp% HEW LETT wL/im PACKARD FDDI, 100 Mbps ATM, and Fast Ethernet Transceivers in Low Cost 1x9 Package Style Technical Data Features D escription • Full Com pliance w ith the Optical Perform ance Requirem ents o f the FDDI PMD Standard • Full Com pliance w ith the


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: SONY I CXP81840A/81848A CMOS 8-bit Single Chip Microcomputer Description The CXP81840A/81848A is a CMOS 8-bit micro­ computer which consists of A/D converter, serial interface, timer/counter, time base timer, vector interruption, high precision timing pattern generation


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    PDF CXP81840A/81848A CXP81840A/81848A 32kHz 100PIN 00P-L01 QFP100-P-1420-A

    2N3392 equivalent

    Abstract: 2N3394 2N3394 equivalent 2N3391 2n3393 equivalent 92C3-426C3 2N3391A 2N3393 2N3392 3391A
    Text: G E SOLID STATE 3875081 G E SOLID STATE 0 1 D E Ï 3Û7S0Û1 0017=111 01E 17911 D r- W ' t l Transistors 2N3390-94,2N3391A Silicon Transistors TO-98 The 6E/RCA 2N3390-94, 2N3391A are planar, passivated


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    PDF DD17111 2N3390-94 2N3391A 2N3390-94, 2N3391A 2N3391 2N3391A. 2CS-427II 750fll 2N3392 equivalent 2N3394 2N3394 equivalent 2n3393 equivalent 92C3-426C3 2N3393 2N3392 3391A

    CSP1084

    Abstract: at&t dsp1610 RXQ1 rxq2 005D IS-54 1251 30 34B
    Text: AT&T K ' Ï Ï Ï Ï * ° ata Sh6et Microelectronics CSP1084 Baseband Radio Interface for IS-54 Dual-Mode Cellular Telephone Applications Features Receive path — Decimation and postfiltering to 10 bits — Programmable gain amplifier with 0 dB to 18 dB gain in 2 dB steps


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    PDF CSP1084 IS-54 005002b 17L31 CSP1084 100-Pin 005002k. 0017b32 at&t dsp1610 RXQ1 rxq2 005D 1251 30 34B

    LC6502

    Abstract: LC6505C CSB400P LC6502B LC6500 2716 TI eprom LC6599 LC65PG99 KBR-400B eprom 2532
    Text: No. 1247 LC65PG99 I I CHIP FOR EVALUATING C MOS 4-BIT SINGLE-CHIP MICROCOMPUTER LC6500 SERIES S AN VO 1. General Description The LC65PG99 is a simulation chip intended for use in evaluating C MOS 4-bit single-chip microcomputer LC6500 series. With a 24-pin socket for program EPROM provided on the package surface, it is designed to facilitate the develop­


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    PDF LC65PG99 LC6500 24-pin 7T17Q7b 0D17t LCC5PG90 LC6502 LC6505C CSB400P LC6502B 2716 TI eprom LC6599 KBR-400B eprom 2532

    transistor SMD 41t

    Abstract: smd transistor marking 9J qml-38535 4069UB smd transistor 9j transistor SMD 12E 4069UBN
    Text: REVISIONS LTR DESCRIPTION APPROVED DATE YR-MO-DA REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET PM IC N/A STANDARD M ICRO CIRCUIT DRAW ING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AM SC N/A 1 2 3


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    PDF 5962-E11 17bsa MIL-BUL-103. MIL-BUL-103 T00470fl 0017b70 transistor SMD 41t smd transistor marking 9J qml-38535 4069UB smd transistor 9j transistor SMD 12E 4069UBN

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 256K j512Kx64 MICRON I SGRAM SODIMMs TECHNOLOGY, INC. SYNCHRONOUS GRAPHICS RAM DIMM FEATURES PIN ASSIGNMENT (Front View) • 144-pin, small-outline, dual in-line memory module (DIMM) • 2MB (256K x 64) and 4MB (512K x 64) • Fully synchronous; all signals registered on positive


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    PDF 144-pin, 024-cycle 144-PIN

    Untitled

    Abstract: No abstract text available
    Text: W O Optical disc ICs o w 4-channel BTL driver for CD players B A 6 1 9 8 S / B A C o Q. o 6 1 9 8 F P T h e B A 6198 and B A 6198FP are ICs with an internal 4 -ch ann el BTL pow er driver for C D players, a 5 V regulator (re­ quires attached PNP transistor , standard operational amplifier, and reset output pin. All driver channels have a gain


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    PDF 6198FP BA6198S/BA6198FP 0017T7S

    2N2926

    Abstract: 2N 2926
    Text: G E SOLID STATE 3875081 01 G E S O L ID DE 3Ö7SDÖ1 aD17cJ0ci 3 | ~ STA TE 01E 17909 D Signal Transistors 2N2£26 7 2, ? ~ / î t ' Silicon Transistors TO-98 The G E / R C A 2N 2926 is a planar passivated N P N silicon tran­ sistor intended for genera purpose applications. The planar


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    PDF aD17c 2N2926 100-C 2N2926 2N 2926

    2N4400

    Abstract: 2N4401 2N4402 2N4403 X10-4
    Text: •g~lf“S Ô L λ S T A T E Öl 387508t G E SOLID STATE DÛT! 3Ö750Ö1 □ 0 1 7 c335 T J ~ 01E 17932 D Signal T ra n sisto rs- 2N4400, 2N4401, 2N4402, 2N4403


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    PDF 0017T35 387508t 2N4400, 2N4401, 2N4402, 2N4403 2N4401 2N4403 2N4400 2N4402 X10-4

    42-PIN

    Abstract: MSM51V16180-70 MSM51V16180-80 V16180 MSM51VI6180
    Text: O K I Semiconductor MSM51V16180_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51VI6180 is OKI's CMOS silicon gate process technology.


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    PDF MSM51V16180 576-Word 18-Bit MSM51V16180 MSM51VI6180 cycles/64ms 42-PIN MSM51V16180-70 MSM51V16180-80 V16180