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    Text: St 'TOSHIBA {DISCRETE/OPTO} DËTJ B O T O S O 0D077G3 J 9097250 TOSHIBA DISCRETE/OPTO 5òTTin70 3 •o' r - 3 ’i w / SILICON NPN EPITAXIA L TYPE (PCT PROCESS) Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. 10.3 MAX 03,6±d2 FEATURES: . Low Collector Saturation Voltage


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    PDF 0D077G3 TTin70 2SA1329