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    Text: N AflER P H IL IP S /D IS CRETE 2SE D • bbS3T31 0Q2D330 0 ■ PowerMOS transistor BUK442-50A BUK442-50B r-39-o <? GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


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    PDF bbS3T31 0Q2D330 BUK442-50A BUK442-50B r-39-o BUK442