Untitled
Abstract: No abstract text available
Text: STGW40H65DFB STGWT40H65DFB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 3 3 1 2 1 TO-247 • Very low saturation voltage: VCE sat = 1.60 V
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Original
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STGW40H65DFB
STGWT40H65DFB
O-247
SC12850
DocID024363
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PDF
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Untitled
Abstract: No abstract text available
Text: GB02SLT12-214 SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB02SLT12-214. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 09-SEP-2013 $ * * GeneSiC Semiconductor Inc.
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Original
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GB02SLT12-214
GB02SLT12-214.
09-SEP-2013
GB02SLT12-214
GB02SLT12
GB02SLT12
05E-15
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PDF
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Untitled
Abstract: No abstract text available
Text: GAP3SLT33-214 Silicon Carbide Power Schottky Diode VRRM IF Tc ≤ 125°C QC Features Package • RoHS Compliant Industry’s leading low leakage currents 175 °C maximum operating temperature Electrically isolated base-plate Positive temperature coefficient of VF
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Original
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GAP3SLT33-214
214AA
GAP3SLT33
39E-14
01E-11
00E-10
00E-03
00E-01
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PDF
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RAD SMD MARKING CODE
Abstract: smd diode marking code TO3
Text: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications
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Original
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STRH40N6
STRH40N6S1
DocID18351
RAD SMD MARKING CODE
smd diode marking code TO3
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PDF
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Untitled
Abstract: No abstract text available
Text: GB01SLT06-214 Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package • RoHS Compliant 650 V Schottky rectifier 175 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability
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Original
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GB01SLT06-214
214AA
s1SLT06
GB01SLT06
57E-18
40E-05
12E-11
00E-10
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PDF
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Untitled
Abstract: No abstract text available
Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened
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Original
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STRH40P10
O-254AA
SC06140p
DocID18354
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PDF
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Untitled
Abstract: No abstract text available
Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened
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Original
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STRH40P10
O-254AA
SC06140p
DocID18354
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PDF
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Untitled
Abstract: No abstract text available
Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened
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Original
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STRH40P10
O-254AA
SC06140p
DocID18354
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PDF
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Untitled
Abstract: No abstract text available
Text: STGW40H65DFB STGWT40H65DFB 650 V, 40 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 3 3 1 2 1 TO-247 • Very low saturation voltage: VCE sat = 1.60 V
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Original
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STGW40H65DFB
STGWT40H65DFB
O-247
SC12850
DocID024363
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PDF
|
Untitled
Abstract: No abstract text available
Text: STGW40H65DFB STGWT40H65DFB 650 V, 40 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 3 3 1 2 1 TO-247 • Very low saturation voltage: VCE sat = 1.60 V
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Original
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STGW40H65DFB
STGWT40H65DFB
O-247
SC12850
DocID024363
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PDF
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DO-214 diode
Abstract: No abstract text available
Text: GB01SLT06-214 Silicon Carbide Power Schottky Diode VRRM IF Tc = 25°C IF (Tc ≤ 150°C) QC Features Package • RoHS Compliant Industry’s leading low leakage currents 175 °C maximum operating temperature Temperature independent switching behavior
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Original
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GB01SLT06-214
214AA
GB01SLT06
57E-18
40E-05
12E-11
00E-10
00E-03
DO-214 diode
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PDF
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Untitled
Abstract: No abstract text available
Text: GB01SLT12-214 Silicon Carbide Power Schottky Diode VRRM IF Tc = 25°C IF (Tc ≤ 150°C) QC Features Package • RoHS Compliant Industry’s leading low leakage currents 175 °C maximum operating temperature Temperature independent switching behavior
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Original
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GB01SLT12-214
214AA
TEMP-24)
GB01SLT12
27E-19
90E-11
00E-10
00E-03
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PDF
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Untitled
Abstract: No abstract text available
Text: GAP3SHT33-CAU Silicon Carbide Power Schottky Diode Chip VRRM VF IF QC = = = = 3300 V 1.7 V 0.3 A 52 nC Features • 3300 V Schottky rectifier 175 °C maximum operating temperature Electrically isolated base-plate Positive temperature coefficient of VF
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Original
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GAP3SHT33-CAU
TEMP-24)
GAP3SHT33
39E-14
01E-11
00E-10
00E-03
00E-01
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PDF
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Untitled
Abstract: No abstract text available
Text: GB01SLT12-214 SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB01SLT12-214. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 09-SEP-2013 $ * * GeneSiC Semiconductor Inc.
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Original
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GB01SLT12-214
GB01SLT12-214.
09-SEP-2013
GB01SLT12-214
TEMP-24)
GB01SLT12
27E-19
90E-11
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PDF
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|
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Untitled
Abstract: No abstract text available
Text: STB26NM60N, STF26NM60N, STP26NM60N N-channel 600 V, 0.135 Ω typ., 20 A MDmesh II Power MOSFETs in D2PAK, TO-220FP and TO-220 packages Datasheet - production data Features TAB Order codes 3 VDS RDS on max ID 600 V 0.165 Ω 20 A STB26NM60N 1 3 D²PAK 1
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Original
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STB26NM60N,
STF26NM60N,
STP26NM60N
O-220FP
O-220
STB26NM60N
STF26NM60N
O-220FP
O-220
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PDF
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STD4N62K3
Abstract: 4n62k
Text: STB4N62K3, STD4N62K3 N-channel 620 V, 1.7 Ω typ., 3.8 A SuperMESH3 Power MOSFETs in D²PAK and DPAK packages Datasheet - production data Features Order codes VDS RDS on max. ID PW 620 V 2Ω 3.8 A 70 W STB4N62K3 TAB STD4N62K3 TAB • 100% avalanche tested
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Original
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STB4N62K3,
STD4N62K3
STB4N62K3
AM01476v1
DocID18337
STD4N62K3
4n62k
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PDF
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Untitled
Abstract: No abstract text available
Text: GB01SLT12-214 Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package • RoHS Compliant 1200 V Schottky rectifier 175 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability
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Original
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GB01SLT12-214
214AA
TEMP-24)
GB01SLT12
27E-19
90E-11
00E-10
00E-03
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PDF
|
Untitled
Abstract: No abstract text available
Text: GAP3SHT33-CAL Silicon Carbide Power Schottky Diode Chip VRRM VF IF QC = = = = 3300 V 1.7 V 0.3 A 52 nC Features • 3300 V Schottky rectifier 175 °C maximum operating temperature Electrically isolated base-plate Positive temperature coefficient of VF
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Original
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GAP3SHT33-CALÂ
TEMP-24)
GAP3SHT33
39E-14
01E-11
00E-10
00E-03
00E-01
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PDF
|
Untitled
Abstract: No abstract text available
Text: GAP3SLT33-214 Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package • RoHS Compliant 3300 V Schottky rectifier 175 °C maximum operating temperature Electrically isolated base-plate Positive temperature coefficient of VF
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Original
|
GAP3SLT33-214
214AA
GAP3SLT33
39E-14
01E-11
00E-10
00E-03
00E-01
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GB02SLT12-214 Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package • RoHS Compliant 1200 V Schottky rectifier 175 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability
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Original
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GB02SLT12-214
214AA
GB02SLT12-214
GB02SLT12
GB02SLT12
05E-15
3E-05
61E-10
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PDF
|
Untitled
Abstract: No abstract text available
Text: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications
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Original
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STRH40N6
STRH40N6S1
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PDF
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Untitled
Abstract: No abstract text available
Text: GB02SLT12-214 Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package • RoHS Compliant 1200 V Schottky rectifier 175 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability
|
Original
|
GB02SLT12-214
214AA
GB02SLT12-214
GB02SLT12
GB02SLT12
05E-15
3E-05
61E-10
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications
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Original
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STRH40N6
STRH40N6S1
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PDF
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Untitled
Abstract: No abstract text available
Text: GB02SLT12-214 Silicon Carbide Power Schottky Diode VRRM IF Tc = 25°C IF (Tc ≤ 150°C) QC Features Package • RoHS Compliant Industry’s leading low leakage currents 175 °C maximum operating temperature Temperature independent switching behavior
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Original
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GB02SLT12-214
214AA
GB02SLT12-214
GB02SLT12
GB02SLT12
05E-15
3E-05
61E-10
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PDF
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