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    Infineon Technologies AG IPD09N03LB-G

    MOSFET N-CH 30V 50A TO252-3
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    Infineon Technologies AG IPU09N03LB-G

    MOSFET N-CH 30V 50A TO251-3
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    09N03LB Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    09n03lb

    Abstract: 09N03 09N03L TRANSISTOR SMD MARKING CODE 42 IPD09N03LB PG-TO252-3-11 IPD09N03LBG
    Text: OptiMOS 2 Power-Transistor 09N03LB G 09N03LB G 09N03LB G 09N03LB G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 9.1 mΩ ID 50 A • N-channel, logic level


    Original     		IPD09N03LB IPU09N03LB IPS09N03LB IPF09N03LB PG-TO252-3-11 PG-TO251-3-11 09n03lb 09N03 09N03L TRANSISTOR SMD MARKING CODE 42 PG-TO252-3-11 IPD09N03LBG PDF

    09N03

    Abstract: S4264 09n03lb IPD09N03LB JESD22 PG-TO252-3-11 P-TO252-3-11 Q67042-S4264
    Text: 09N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 30 V R DS on),max 9.1 mΩ ID 50 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPD09N03LB PG-TO252-3-11 Q67042-S4264 09N03LB 09N03 S4264 09n03lb JESD22 PG-TO252-3-11 P-TO252-3-11 Q67042-S4264 PDF

    09N03

    Abstract: 09n03lb 09n03l IPD09N03LB PG-TO252-3-11
    Text: 09N03LB G 09N03LB G 09N03LB G 09N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max (SMD version) 9.1 mΩ


    Original     		IPD09N03LB IPF09N03LB IPS09N03LB IPU09N03LB PG-TO252-3-11 PG-TO252-3-23 09N03 09n03lb 09n03l PG-TO252-3-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: 09N03LB G 09N03LB G 09N03LB G 09N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max (SMD version) 9.1 mΩ


    Original     		IPD09N03LB IPF09N03LB IPS09N03LB IPU09N03LB PG-TO252-3-11 PG-TO252-3-23 PDF

    smd marking D50

    Abstract: No abstract text available
    Text: 09N03lB G 09N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 9.1 mΩ ID 50 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPD09N03lB IPS09N03LB PG-TO252-3-11 09N03LB PG-TO251-3-11 smd marking D50 PDF

    09N03

    Abstract: 09N03LB IPD09N03LB JESD22 PG-TO252-3-11
    Text: 09N03lB G 09N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 9.1 mΩ ID 50 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPD09N03lB IPS09N03LB PG-TO252-3-11 PG-TO251-3-11 09N03LB 09N03 09N03LB JESD22 PG-TO252-3-11 PDF

    09n03lb

    Abstract: PG-TO252-3-23
    Text: OptiMOS 2 Power-Transistor 09N03LB G 09N03LB G 09N03LB G 09N03LB G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 9.1 mΩ ID 50 A • N-channel, logic level


    Original     		IPD09N03LB IPU09N03LB IPS09N03LB IPF09N03LB 09n03lb PG-TO252-3-23 PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 PDF

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 PDF

    PG-TO252-3-11

    Abstract: 09n03 PG-TO-252-3-11 IPF09N03LB 09N03L PG-TO252 09n03lb
    Text: 09N03LB G 09N03LB G 09N03LB G 09N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max (SMD version) 9.1 mΩ


    Original     		IPD09N03LB IPF09N03LB IPS09N03LB IPU09N03LB PG-TO252-3-11 09N03LB 09n03 PG-TO-252-3-11 09N03L PG-TO252 09n03lb PDF