59472
Abstract: 2222 050 17103 115 ped-st capacitor
Text: 106 PED-ST Vishay BCcomponents Aluminum Capacitors Power Eurodin Screw Terminals FEATURES • Polarized aluminum electrolytic capacitors, non-solid electrolyte • Large types, cylindrical aluminum case, insulated with a blue sleeve • Also available in bolt version 106 PED-STB
|
Original
|
EN130300
08-Mar-05
59472
2222 050 17103
115 ped-st capacitor
|
PDF
|
TESP5700
Abstract: No abstract text available
Text: TESP5700 Vishay Semiconductors Silicon PIN Photodiode Description TESP5700 PIN photodiode is applicable to high speed data transmission specifically at low reverse voltage. Black epoxy package include side view lens and daylight filter, matched to high speed IR emitters.
|
Original
|
TESP5700
TESP5700
2002/95/EC
2002/96/EC
08-Apr-05
|
PDF
|
ic 8237
Abstract: No abstract text available
Text: BPW16N Vishay Semiconductors Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily
|
Original
|
BPW16N
BPW16N
CQY36N
2002/95/EC
08-Apr-05
ic 8237
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSTS7300 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description The TSTS730. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO-18 package. Their glass lenses provide a high radiant intensity without external optics.
|
Original
|
TSTS7300
TSTS730.
2002/95/EC
2002/96/EC
08-Apr-05
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BPW46 Vishay Semiconductors Silicon PIN Photodiode Description BPW46 is a high speed and high sensitive PIN photodiode in a flat side view plastic package. Due to its waterclear epoxy the device is sensitive to visible and infrared radiation. The large active area combined with a flat case gives
|
Original
|
BPW46
BPW46
2002/95/EC
2002/96/EC
08-Apr-05
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSMF3710 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSMF3710 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant
|
Original
|
TSMF3710
TSMF3710
08-Apr-05
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSML3710 is an infrared emitting diode in GaAlAs on GaAs technology in miniature PLCC-2 SMD package. Features • • • • • SMT IRED with extra high radiant power
|
Original
|
TSML3710
TSML3710
TEMT3700
2002/95/EC
2002/96/EC
08-Apr-05
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSTS7500 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description The TSTS750. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO-18 package. Their flat glass windows make them ideal for use with external optics.
|
Original
|
TSTS7500
TSTS750.
2002/95/EC
2002/96/EC
08-Apr-05
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSUS4400 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSUS4400 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. The device is spectrally matched to silicon photodetectors.
|
Original
|
TSUS4400
TSUS4400
2002/95/EC
2002/96/EC
08-Apr-05
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BPW82 Vishay Semiconductors Silicon PIN Photodiode Description BPW82 is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR emitters λ p ≥ 800 nm .
|
Original
|
BPW82
BPW82
2002/95/EC
08-Apr-05
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TEMD1000 / 1020 / 1030 / 1040 Vishay Semiconductors Silicon PIN Photodiode TEMD1000 Description TEMD1020 TEMD1000 series are high speed silicon PIN photodiodes molded in SMT package with dome lens. Due to integrated Daylight filter devices are sensitive for IR radiation only.
|
Original
|
TEMD1000
TEMD1000
TEMD1020
TEMD1030
TEMD1040
TSMF1000
TSML1000
2002/95/EC
2002/96/EC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Description TSMG3700 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant
|
Original
|
TSMG3700
TSMG3700
08-Apr-05
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSAL6400 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.
|
Original
|
TSAL6400
TSAL6400
08-Apr-05
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TEMT3700F Vishay Semiconductors Silicon NPN Phototransistor Description TEMT3700F is a high speed silicon NPN epitaxial planar phototransistor in a miniature PLCC-2 package with integrated IR band pass filter 950 nm . Features • • • • • High sensitivity
|
Original
|
TEMT3700F
TEMT3700F
TSMS3700
TSML3710
2002/95/EC
2002/96/EC
TEMT3700F-GS08
TEMT3700F-GS18
08-Apr-05
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: BPV10 Vishay Semiconductors Silicon PIN Photodiode Description BPV10 is a very high speed and high sensitive PIN photodiode in a standard T-1¾ plastic package. Due to its waterclear epoxy the device is sensitive to visible and infrared radiation. Features
|
Original
|
BPV10
BPV10
2002/95/EC
2002/96/EC
08-Apr-05
|
PDF
|
VSM85
Abstract: CERAMIC LEADLESS CHIP CARRIER LCC 32 socket
Text: VSM85, 86, 87, 88, 89 Vishay Foil Resistors SURFACE MOUNT Bulk Metal Foil Technology Surface Mount Hermetic Resistor Networks In Leadless Chip Carrier LCC Configuration Vishay Model VSM networks incorporate all the performance features of Vishay Bulk Metal® Foil technology in a product
|
Original
|
VSM85,
VSM86,
VSM87,
VSM88
VSM89
08-Apr-05
VSM85
CERAMIC LEADLESS CHIP CARRIER LCC 32 socket
|
PDF
|
CERAMIC LEADLESS CHIP CARRIER LCC 52 socket
Abstract: VSM85
Text: VSM85, 86, 87, 88, 89 Vishay Foil Resistors SURFACE MOUNT Bulk Metal Foil Technology Surface Mount Hermetic Resistor Networks In Leadless Chip Carrier LCC Configuration Vishay Model VSM networks incorporate all the performance features of Vishay Bulk Metal® Foil technology in a product
|
Original
|
VSM85,
VSM86,
VSM87,
VSM88
VSM89
18-Jul-08
CERAMIC LEADLESS CHIP CARRIER LCC 52 socket
VSM85
|
PDF
|
l 708
Abstract: STM705 STM706 STM707 STM708 STM813L 813L 29ac
Text: STM705, STM706, STM707, STM708, STM813L 5V Supervisor FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ 5V OPERATING VOLTAGE PRECISION VCC MONITOR – STM705/707/813L 4.50V ≤ VRST ≤ 4.75V – STM706/708 4.25 ≤ VRST ≤ 4.50V RST AND RST OUTPUTS
|
Original
|
STM705,
STM706,
STM707,
STM708,
STM813L
STM705/707/813L
STM706/708
200ms
STM705
STM706
l 708
STM705
STM706
STM707
STM708
STM813L
813L
29ac
|
PDF
|
BPW96
Abstract: No abstract text available
Text: BPW96 Vishay Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ ∅ 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near
|
Original
|
BPW96
BPW96
2002/95/EC
2002/96/EC
D-74025
08-Mar-05
|
PDF
|
TSAL infrared
Abstract: No abstract text available
Text: TSAL5300 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL5300 is a high efficiency infrared emitting diode in GaAs technology, molded in clear, bluegrey tinted plastic packages. 96 11505 Features Applications •
|
Original
|
TSAL5300
TSAL5300
2000/53/EC,
2002/95/EC
2002/96/EC
D-74025
08-Mar-05
TSAL infrared
|
PDF
|
VPR247
Abstract: No abstract text available
Text: VHP-3, VHP-4, VPR247 Vishay Foil Resistors Bulk Metal Foil Technology Hermetically Sealed Power and Current Sensing Resistors FEATURES • Temperature Coefficient of Resistance Nominal TCR3: + 0.6ppm/°C 0°C to + 25°C ; – 0.6ppm/°C (+ 25°C to + 60°C);
|
Original
|
VPR247
08-Mar-05
VPR247
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSTS7500 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description The TSTS750. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO-18 package. Their flat glass windows make them ideal for use with external optics.
|
Original
|
TSTS7500
TSTS750.
2002/95/EC
2002/96/EC
D-74025
08-Mar-05
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 20- 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 20’ LOC - ALL RIGHTS RESERVED. REVISIONS DIST 00 GP LTR DESCRIPTION REDRAWN PER EC 0S13-0148-04 DATE DWN APVD 08MAR05 TS JG D D A u M A T E R IA L :
|
OCR Scan
|
08MAR05
0S13-0148-04
08MARO5
31MAR2000
|
PDF
|
Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION LOC REVISIONS GP 00 A LL RIGHTS RESERVED. COPYRIGHT DIST BY TYCO ELECTRONICS CORPORATION. LTR DESCRIPTION DWN DATE REDRAWN PER EC 0 S 1 3 - 0 1 4 8 - 0 4 APVD TS JG 08MAR05 A 9- Q D y il il il r i 11 11 11 I I
|
OCR Scan
|
08MAR05
7877S71B
|
PDF
|