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    08CN10N Search Results

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    08CN10N Price and Stock

    Infineon Technologies AG IPB08CN10N-G

    MOSFET N-CH 100V 95A D2PAK
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    DigiKey IPB08CN10N-G Reel
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    Infineon Technologies AG IPP08CN10N-G

    MOSFET N-CH 100V 95A TO220-3
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    DigiKey IPP08CN10N-G Tube 500
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    Infineon Technologies AG IPP08CN10NG

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    Component Electronics, Inc IPP08CN10NG 18
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    08CN10N Datasheets Context Search

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    08CN10N

    Abstract: ds 1-08 diode IEC61249-2-21 IPP08CN10N JESD22 PG-TO220-3 C95T
    Text: 08CN10N G 08CN10N G OptiMOS 2 Power-Transistor 08CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 8.2 mΩ ID 95 A • Very low on-resistance R DS(on)


    Original     		PDF IPB08CN10N IPI08CN10N IPP08CN10N IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 08CN10N ds 1-08 diode IEC61249-2-21 JESD22 PG-TO220-3 C95T

    08CN10N

    Abstract: IPP08CN10N JESD22 PG-TO220-3 08CN10 08cn
    Text: 08CN10N G 08CN10N G OptiMOS 2 Power-Transistor 08CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 8.2 mΩ ID 95 A • Very low on-resistance R DS(on)


    Original     		PDF IPB08CN10N IPI08CN10N IPP08CN10N PG-TO263-3 PG-TO262-3 PG-TO220-3 08CN10N 08CN10N JESD22 PG-TO220-3 08CN10 08cn

    08CN10N

    Abstract: No abstract text available
    Text: 08CN10N G 08CN10N G OptiMOS 2 Power-Transistor 08CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 8.2 mΩ ID 95 A • Very low on-resistance R DS(on)


    Original     		PDF IPB08CN10N IPI08CN10N IPP08CN10N PG-TO263-3 08CN10N PG-TO262-3 08CN10N

    08cn10n

    Abstract: IPB08CN10N G IPP08CN10N to262 pcb footprint PG-TO220-3 JESD22
    Text: 08CN10N G 08CN10N G OptiMOS 2 Power-Transistor 08CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 8.2 mΩ ID 95 A • Very low on-resistance R DS(on)


    Original     		PDF IPB08CN10N IPI08CN10N IPP08CN10N PG-TO263-3 PG-TO262-3 PG-TO220-3 08CN10N 08cn10n IPB08CN10N G to262 pcb footprint PG-TO220-3 JESD22

    08CN10N

    Abstract: No abstract text available
    Text: 08CN10N G 08CN10N G OptiMOS 2 Power-Transistor 08CN10N G Product Summary Features V DS 100 V • N-channel, normal level R DS on ,max (TO263) 8.2 m: ID 95 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPB08CN10N IPI08CN10N IPP08CN10N PG-TO263-3 08CN10N PG-TO262-3 08CN10N

    08cn10n

    Abstract: IPP08CN10N JESD22 PG-TO220-3
    Text: 08CN10N G 08CN10N G OptiMOS 2 Power-Transistor 08CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 8.2 mΩ ID 95 A • Very low on-resistance R DS(on)


    Original     		PDF IPB08CN10N IPI08CN10N IPP08CN10N PG-TO263-3 PG-TO262-3 PG-TO220-3 08CN10N 08cn10n JESD22 PG-TO220-3

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819