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    080N06N Search Results

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    080N06N Price and Stock

    Infineon Technologies AG IPP080N06N-G

    MOSFET N-CH 60V 80A TO220-3
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    DigiKey IPP080N06N-G Tube 500
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    Infineon Technologies AG IPB080N06N-G

    MOSFET N-CH 60V 80A TO263-3
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    DigiKey IPB080N06N-G Digi-Reel 1
    • 1 $1.18
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    IPB080N06N-G Reel 1,000
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    IPB080N06N-G Cut Tape 1
    • 1 $1.18
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    080N06N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IEC61249-2-21

    Abstract: PG-TO220-3 080N06N
    Text: 080N06N G OptiMOS Power-Transistor 080N06N G Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 7.7 mΩ 80 A • 175 °C operating temperature


    Original     		IPB080N06N IPP080N06N IEC61249-2-21 P-TO263-3-2 P-TO220-3-1 080N06N IEC61249-2-21 PG-TO220-3 080N06N PDF

    080N06N

    Abstract: d80 DIODE PG-TO220-3
    Text: 080N06N G OptiMOS Power-Transistor 080N06N G Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 7.7 m: 80 A • 175 °C operating temperature • Avalanche rated


    Original     		IPB080N06N IPP080N06N PG-TO263-3 PG-TO220-3 080N06N 080N06N d80 DIODE PG-TO220-3 PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 PDF

    PG-TO220-3

    Abstract: IPP080N06N d80 DIODE 65V8
    Text: 080N06N G OptiMOS Power-Transistor 080N06N G Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 7.7 mΩ 80 A • 175 °C operating temperature


    Original     		IPB080N06N IPP080N06N P-TO263-3-2 P-TO220-3-1 080N06N PG-TO220-3 d80 DIODE 65V8 PDF

    Untitled

    Abstract: No abstract text available
    Text: 080N06N G OptiMOS Power-Transistor 080N06N G Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 7.7 mΩ 80 A • 175 °C operating temperature


    Original     		IPB080N06N IPP080N06N P-TO263-3-2 080N06N P-TO220-3-1 PDF