BSH108
Abstract: nokia rf power amplifier transistor Schottky Diode 40V 2A TOPSWITCH battery charger TRANSISTOR BL 100 BL 05A TOPSWITCH battery charger 2A BSH103 BSH111 1PS74SB43
Text: Discretes and MultiMarket ICs DMI – BL Power 08/08/2002 DMI – BL Power Application: Mobile Phone Display LCD Module LCD driver Charger Power Supplies Aux ADCs Smartcard & SIM interface PMU Reset On/Off Analog Audio Codec Hands free GP-IC Semiconductors
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BYD37J
BYG60J
BSH103
BSH111
PBSS5140D
BSH105
BSH112
PBSS5320D
BSH108
BSH114
BSH108
nokia rf power amplifier transistor
Schottky Diode 40V 2A
TOPSWITCH battery charger
TRANSISTOR BL 100
BL 05A
TOPSWITCH battery charger 2A
BSH103
BSH111
1PS74SB43
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MAAMSS0048
Abstract: MAAL-007306 MAAMSS0017 PQFN-16 wimax components MAAP-003438-010PP0 MASWSS0006 MASW-007107 cpe wimax MAFR-000121-5D4S1T
Text: WiMAX broc_Feb08_singles_r2.qxd 3/18/08 3:13 PM Page 1 M/A-COM WiMAX components for next generation wireless February 2008 WiMAX broc_Feb08_singles_r2.qxd 3/18/08 3:13 PM Page 2 M/A-COM WiMAX Mobile and Customer Premises Equipment CPE WiMAX Mobile The newly ratified IEEE 802.16e standard allows manufacturers to begin introducing
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Feb08
MAAMSS0048
MAAL-007306
MAAMSS0017
PQFN-16
wimax components
MAAP-003438-010PP0
MASWSS0006
MASW-007107
cpe wimax
MAFR-000121-5D4S1T
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diode SOT89
Abstract: sot89 SOT89 Package 425M
Text: PACKAGE DIMENSIONS SOT89 3Pin 4.5±0.3 1.5±0.15 0.4±0.1 1 2 3 0.42±0.1 4.25M AX 0.8M IN 2.5±0.3 0.45 1.6 0.42±0.1 +0.15 0.4 -0.05 0.47±0.1 1.5 1.5 UNIT : mm Ver.2003-08-29
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5pin
Abstract: sot89
Text: PACKAGE DIMENSIONS SOT89 5Pin -U1 4.5±0.3 1.5±0.3 1.6 0.47 2 3 0.42 0.47 1.5 GD-U00501B-0 Ver.2003-08-29 +0.5 - 0.3 1 0.4 1.0 4.5 4 0.4 (2) 2.5±0.3 5 0.4 1.5 UNIT : mm
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GD-U00501B-0
5pin
sot89
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sot89
Abstract: 425M
Text: パッケージ外形図 SOT89 3Pin 4.5±0.3 1.5±0.15 0.4±0.1 1 2 3 0.42±0.1 4.25M AX 0.8M IN 2.5±0.3 0.45 1.6 0.42±0.1 +0.15 0.4 -0.05 0.47±0.1 1.5 1.5 単位 : mm Ver.2003-08-29
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sot89
Abstract: No abstract text available
Text: パッケージ外形図 SOT89 5Pin -U1 4.5±0.3 1.5±0.3 1.6 0.47 2 3 0.42 0.47 1.5 GD-U00501B-0 Ver.2003-08-29 +0.5 - 0.3 1 0.4 1.0 4.5 4 0.4 (2) 2.5±0.3 5 0.4 1.5 単位 : mm
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GD-U00501B-0
sot89
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StR 40000
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BCV29; BCV49 NPN Darlington transistors Product specification Supersedes data of 1997 Apr 21 1999 Apr 08 Philips Semiconductors Product specification NPN Darlington transistors BCV29; BCV49 FEATURES
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M3D109
BCV29;
BCV49
BCV28
BCV48.
MAM300
SCA63
115002/00/05/pp8
StR 40000
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BCV28; BCV48 PNP Darlington transistors Product specification Supersedes data of 1997 Apr 21 1999 Apr 08 Philips Semiconductors Product specification PNP Darlington transistors BCV28; BCV48 FEATURES
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M3D109
BCV28;
BCV48
BCV29
BCV49.
MAM301
SCA63
115002/00/04/pp8
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BCV49
Abstract: BCV28 BCV29 BCV48
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BCV29; BCV49 NPN Darlington transistors Product specification Supersedes data of 1999 Apr 08 2004 Dec 06 Philips Semiconductors Product specification NPN Darlington transistors BCV29; BCV49 FEATURES
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M3D109
BCV29;
BCV49
BCV28
BCV48.
sym087
SCA76
R75/06/pp8
BCV49
BCV29
BCV48
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BCV48 philips
Abstract: BCV28 BCV29 BCV48 BCV49
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BCV28; BCV48 PNP Darlington transistors Product specification Supersedes data of 1999 Apr 08 2004 Dec 06 Philips Semiconductors Product specification PNP Darlington transistors BCV28; BCV48 FEATURES
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M3D109
BCV28;
BCV48
BCV29
BCV49.
BCV28
SCA76
BCV48 philips
BCV28
BCV48
BCV49
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Tda 7234
Abstract: 0365J transistor bc 647 ICB1FL02G 220V 350mA LED driver 3b0365 TDA 16888 TDA 7239 5085EJ TLE 4242 G
Text: Efficient Lighting Intelligent solutions for LED drivers and lamp ballast control [ www.infineon.com/lighting ] 2 Contents Product Roadmaps 04 Lighting Applications 06 Application Examples 08 Industrial Linear Drivers 10 Automotive Linear Drivers 13 DC/DC
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12F-1,
B127-H9377-X-X-7600
Tda 7234
0365J
transistor bc 647
ICB1FL02G
220V 350mA LED driver
3b0365
TDA 16888
TDA 7239
5085EJ
TLE 4242 G
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GM157
Abstract: No abstract text available
Text: CORPORATION GM157 Description ISSUED DATE :2005/08/19 REVISED DATE : PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR The GM157 is designed for general purpose switching and amplifier applications. Features -60 Volt VCEO 3 Amp continuous current Low saturation voltage
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GM157
GM157
OT-89
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FW82439TX
Abstract: 442-665 FM 4213 904251 C-569 cyber938 777HFR PC505 12v dc choke inverter circuit Rp1214
Text: DATA CUT DATE:1998/08/04 * PC;5033TX/SS-001-M/XX-0A/1XB Spare Parts List * A PART_NO 526266553005 .1 416266553012 .3 411665500201 .4 242600000001 .4 242600000145 .4 242600000158 .4 242600000169 .4 242600000170 .4 242600000195 .4 242901300011
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5033TX/SS-001-M/XX-0A/1XB
LP486
5026VO
200MM
3020F
5033T
FW82439TX
442-665
FM 4213
904251
C-569
cyber938
777HFR
PC505
12v dc choke inverter circuit
Rp1214
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sc6211
Abstract: PBSS4480X PBSS5480X
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS5480X 80 V, 4 A PNP low VCEsat BISS transistor Product specification Supersedes data of 2004 Jun 8 2004 Nov 08 Philips Semiconductors Product specification 80 V, 4 A PNP low VCEsat (BISS) transistor
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M3D109
PBSS5480X
SCA76
R75/02/pp13
sc6211
PBSS4480X
PBSS5480X
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B3P68
Abstract: BC868 BC868-25 BC869 BC869-25 BCP68
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BC868 NPN medium power transistor; 20 V, 1 A Product specification Data supersedes data of 1999 Apr 08 2003 Dec 02 Philips Semiconductors Product specification NPN medium power transistor; 20 V, 1 A
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M3D109
BC868
BC869
SCA75
R75/06/pp10
B3P68
BC868
BC868-25
BC869
BC869-25
BCP68
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AP78L05
Abstract: SO-8 marking code 271 AP78L12 marking CODE A3 SOT89 Marking code 33 29 SOT89 AP78L08
Text: AP78L05/08/12 AP78LXX SERIES 3-TERMINAL POSITIVE REGULATORS Description Pin Assignments The AP78LXX Series is a three terminal positive regulator available with fixed output voltages from 5V, 8V and 12V, making them useful in a wide range of applications. When
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AP78L05/08/12
AP78LXX
DS31054
AP78L05
SO-8 marking code 271
AP78L12
marking CODE A3 SOT89
Marking code 33 29 SOT89
AP78L08
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JESD22-A108
Abstract: JESD22-A102 JESD22-B106 A9273 JESD22-A103 JESD22-B102 sot89 JESD22A108 a103 transistor transistor a102
Text: Diodes Zetex Semiconductors Limited Zetex Technology Park, Chadderton, Oldham, OL9 9LL, United Kingdom. Telephone No.: +44 0 161 622 4533 Quality Dept Fax No: +44 (0)161 622 4543 E-mail:[email protected] Internet: http://www.zetex.com Date: 20/08/2008 Device Family:
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ISO/TS16949
A9273
JESD22-A104
JESD22-B106
JESD22-
JESD22-A103
JESD22-A102
JESD22-A108)
638E-04
JESD22-A108
JESD22-A102
JESD22-B106
A9273
JESD22-A103
JESD22-B102
sot89
JESD22A108
a103 transistor
transistor a102
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BC868
Abstract: BC868-25 marking Code philips
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BC868 NPN medium power transistor; 20 V, 1 A Product specification Supersedes data of 2003 Dec 02 2004 Nov 08 Philips Semiconductors Product specification NPN medium power transistor; 20 V, 1 A BC868
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M3D109
BC868
SCA76
R75/07/pp9
BC868
BC868-25
marking Code philips
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PBSS4250X
Abstract: PBSS5250X 08 SC-62
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4250X 50 V, 2 A NPN low VCEsat BISS transistor Product specification Supersedes data of 2003 Jun 17 2004 Nov 08 Philips Semiconductors Product specification 50 V, 2 A NPN low VCEsat (BISS) transistor
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M3D109
PBSS4250X
SC-62)
SCA76
R75/02/pp9
PBSS4250X
PBSS5250X
08 SC-62
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KT 382
Abstract: pdaat powerex ks powerex kt KT 783
Text: POü ÉREX INC 'ìlD D • TaTMLEÍToOQlñTi T Thyristor Assemblies-Air Cooled Device Assembly Module Typ« PTA6T620_15 _20 _30 PTA6T62S_25 _30 _ 40 PTA7T720 _35 _45 _55 PTA7T7S0_55 _65 _75 PTA9T9G0_ 08 _10 _ 12
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PTA6T620_
PTA6T62S_
PTA7T720
PTAATA20_
KT 382
pdaat
powerex ks
powerex kt
KT 783
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2609 al
Abstract: KT 708 459 MARKING sot89 powerex ks powerex kt THYRISTOR br 403
Text: POUEREX INC TID D • TS^MbSl ODDlflfiO 5 m Thyristor Assemblies-Water Cooled Assembly Module Type PTL6T620_ 15 _ 20 _30 PTL6T625_ 25 _30 _40 PTL7T720 _ 35 _ 45 _ 55 PTL7T7S0_55 _ 65 _ 75 PTL9T9G0_ 08 — — 10 _12
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PTL6T620_
PTL6T625_
PTL7T720
PTKATA20_
2609 al
KT 708
459 MARKING sot89
powerex ks
powerex kt
THYRISTOR br 403
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marking code EF
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T BCV29; BCV49 NPN Darlington transistors Product specification Supersedes data of 1997 Apr 21 Philips Sem iconductors 1999 Apr 08 PHILIPS Philips Semiconductors Product specification NPN Darlington transistors BCV29; BCV49
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OCR Scan
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PDF
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BCV29;
BCV49
BCV49
BCV28
BCV48.
BCV29
115002/00/05/pp8
marking code EF
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T BCV28; BCV48 PNP Darlington transistors Product specification Supersedes data of 1997 Apr 21 Philips Sem iconductors 1999 Apr 08 PHILIPS Philips Semiconductors Product specification PNP Darlington transistors BCV28; BCV48
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OCR Scan
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PDF
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BCV28;
BCV48
BCV48
BCV29
BCV49.
BCV28
115002/00/04/pp8
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PNP TRANSISTOR "SOT89" marking pr
Abstract: marking za sot89 SOT89 transistor marking with lb 135
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 Jul 16 Philips Sem iconductors 1999 Apr 08 PHILIPS Philips Semiconductors Product specification NPN medium power transistor BC868 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 20 V).
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BC868
BC869.
BC868
BC868-25
134conductors
115002/00/05/pp8
PNP TRANSISTOR "SOT89" marking pr
marking za sot89
SOT89 transistor marking with lb 135
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