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    060P2 Search Results

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    060P2 Price and Stock

    JEDEC 62060-P2S02

    PWR XFMR TOROIDAL 25VA CHAS MT
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    DigiKey 62060-P2S02 Bulk 2,112 1
    • 1 $19.06
    • 10 $19.06
    • 100 $18.65
    • 1000 $18.65
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    Brady Worldwide Inc 5060P-2

    5060P-2 YEL 2" GOTHIC QUIK-ALIGN
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    DigiKey 5060P-2 Bulk 1
    • 1 $12.9
    • 10 $12.9
    • 100 $12.9
    • 1000 $12.9
    • 10000 $12.9
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    MACOM CGH35060P2

    RF MOSFET GAN HEMT 28V 440206
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    DigiKey CGH35060P2 Tray 50
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    • 100 $172.2624
    • 1000 $172.2624
    • 10000 $172.2624
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    Mouser Electronics CGH35060P2
    • 1 -
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    • 100 $179.14
    • 1000 $179.14
    • 10000 $179.14
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    Richardson RFPD CGH35060P2 1
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    onsemi ISL9R3060P2

    DIODE GEN PURP 600V 30A TO220-2
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    DigiKey ISL9R3060P2 Tube 1
    • 1 $2.77
    • 10 $2.77
    • 100 $2.226
    • 1000 $2.226
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    Newark ISL9R3060P2 Bulk 73 1
    • 1 $2.89
    • 10 $2.46
    • 100 $1.99
    • 1000 $1.66
    • 10000 $1.31
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    Rochester Electronics ISL9R3060P2 2,652 1
    • 1 $1.18
    • 10 $1.18
    • 100 $1.11
    • 1000 $1
    • 10000 $1
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    New Advantage Corporation ISL9R3060P2 100 1
    • 1 -
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    • 100 $1.36
    • 1000 $1.36
    • 10000 $1.36
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    Rochester Electronics LLC ISL9R3060P2

    STR TO2202L PN 30A 600V
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    DigiKey ISL9R3060P2 Bulk 245
    • 1 -
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    • 1000 $1.23
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    060P2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CGH35060F2 / 060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree’s CGH35060F2/P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 / P2 ideal for


    Original
    PDF CGH35060F2 CGH35060P2 CGH35060F2/P2 CGH3506 CGH35 060P2

    Untitled

    Abstract: No abstract text available
    Text: CGH35060F2 / 060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree’s CGH35060F2/P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 / P2 ideal for


    Original
    PDF CGH35060F2 CGH35060P2 CGH35060F2/P2 CGH3506 CGH35 060P2

    CGH35060

    Abstract: No abstract text available
    Text: CGH35060F2 / 060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree’s CGH35060F2/P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 / P2 ideal for


    Original
    PDF CGH35060F2 CGH35060P2 CGH35060F2/P2 CGH3506 CGH35 060P2 CGH35060