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    06031C103KAT2A Price and Stock

    Kyocera AVX Components 06031C103KAT2A

    Multilayer Ceramic Capacitor, 0.01 uF, 100 V, ? 10% , X7R , 0603 [1608 Metric] - Tape and Reel (Alt: KGM15AR72A103KT)
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    Avnet Americas 06031C103KAT2A Reel 432,000 12 Weeks 4,000
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    06031C103KAT2A Ammo Pack 14 Weeks, 5 Days 1
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    06031C103KAT2A Reel 4,000
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    Mouser Electronics 06031C103KAT2A 388,022
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    Arrow Electronics 06031C103KAT2A 4,000 12 Weeks 4,000
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    Newark 06031C103KAT2A Reel 68,000 4,000
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    06031C103KAT2A Cut Tape 10,822 1
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    RS 06031C103KAT2A Bulk 3,136 4,000
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    06031C103KAT2A Bulk 4,000
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    Future Electronics 06031C103KAT2A Reel 2,680,000 14 Weeks 4,000
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    Onlinecomponents.com 06031C103KAT2A 100,000
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    Bristol Electronics 06031C103KAT2A 11,288
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    06031C103KAT2A 3,490
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    06031C103KAT2A 2,370 89
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    Quest Components 06031C103KAT2A 12,488
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    06031C103KAT2A 3,200
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    06031C103KAT2A 1,896
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    06031C103KAT2A 900
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    06031C103KAT2A 157
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    TME 06031C103KAT2A 31,682 1
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    NexGen Digital 06031C103KAT2A 1,648
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    Avnet Abacus 06031C103KAT2A Reel 88,000 14 Weeks 4,000
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    Component Electronics, Inc 06031C103KAT2A 2,604
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    Kyocera AVX Components 06031C103KAT4A

    Multilayer Ceramic Capacitors MLCC - SMD/SMT KGM15AR72A103KM NEW GLOBAL PN 100V .01uF A 581-KGM15AR72A103KM
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    Mouser Electronics 06031C103KAT4A 59,736
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    Kyocera AVX Components KGM15AR72A103KT

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 100V .01uF X7R 0603 10%
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    Mouser Electronics KGM15AR72A103KT 31,696
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    TTI KGM15AR72A103KT Reel 36,000 4,000
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    KYOCERA AVX Components 06031C103KAT2A

    Cap Ceramic 0.01uF 100V X7R 10% Pad SMD 0603 125°C T/R
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    Verical 06031C103KAT2A 100,000 4,000
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    06031C103KAT2A 31,682 7,937
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    06031C103KAT2A 4,000 4,000
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    Kyocera AVX Components 06031C103KAT2A.

    Ceramic Capacitor 0.01Uf 100V, X7R, 10%, 0603, Full Reel; Capacitance:0.01Μf; Voltage(Dc):100V; Capacitor Case/Package:0603 [1608 Metric]; Capacitance Tolerance:± 10%; Dielectric Characteristic:X7R; Product Range:-; Qualification:-Rohs Compliant: Yes |Kyocera Avx 06031C103KAT2A.
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    Newark 06031C103KAT2A. Reel 4,000
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    06031C103KAT2A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    06031C103KAT2A AVX Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance:+/- 10 %; Working Voltage, DC:100V; Dielectric Characteristic:X7R; Package/Case:0603; Series:MLCC; Leaded Process Compatible:Yes Original PDF

    06031C103KAT2A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PWR530

    Abstract: No abstract text available
    Text: User's Guide SLVU890 – April 2013 TPS54531EVM-530, 5-A Regulator Evaluation Module This user's guide contains information for the TPS54531EVM-530 evaluation module as well as for the TPS54531. Included are the performance specifications, schematic, and the bill of materials of the


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    PDF SLVU890 TPS54531EVM-530, TPS54531EVM-530 TPS54531. TPS54531EVM-530. PWR530

    54FK

    Abstract: No abstract text available
    Text: DEMO MANUAL DC1826A LTC2389 18-Bit/16-Bit, 2.5Msps Low Noise, SAR ADCs with Pin-Configurable Analog Input Range DESCRIPTION Demonstration circuit 1826A features the LTC 2389 low noise, high speed successive approximation register ADC which operates from a single 5V supply. The following


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    PDF DC1826A LTC2389 18-Bit/16-Bit, LTC2389-18, LTC2389-16, LTC2389-18 dc1826afa 54FK

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    Untitled

    Abstract: No abstract text available
    Text: NPTB00004A Gallium Nitride 28V, 5W, DC-6 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Broadband operation from DC-6 GHz 28V Operation Industry Standard Plastic Package High Drain Efficiency >55%


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    PDF NPTB00004A NPTB00004 NPTB00004A NDS-036

    panasonic inverter dv 707 manual

    Abstract: 018T A423 Mosfet FTR 03-E Arcotronics 1.27.6 nsl 7053 mkp DX 3500 manual Honeywell DBM 01A Polyester capacitors 823k 250V SPRAGUE powerlytic 36Dx sprague 68D
    Text: PASSIVE COMPONENTS Resistors Networks and Arrays Bourns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 590, 591, 592 Caddock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 593 CTS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 594


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    PDF

    smd transistor E21

    Abstract: 50CE100LX SMD diode MARKING e18 smd transistor marking e5 NRCP25J101TRF 50CE100 E5 sot223 06033C474KAT2A sd 431 transistor LTC4366
    Text: DEMO MANUAL DC1850A-A/DC1850A-B LTC4366HTS8-1/LTC4366HTS8-2 Very High Voltage Surge Stopper Description Demonstration Circuit 1850A showcases the LTC 4366 high voltage surge stopper in a 28V vehicular application. DC1850A withstands inputs of up to 100VDC and input


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    PDF DC1850A-A/DC1850A-B LTC4366HTS8-1/LTC4366HTS8-2 DC1850A 100VDC DC1850A-A DC1850A-B dc1850aabf smd transistor E21 50CE100LX SMD diode MARKING e18 smd transistor marking e5 NRCP25J101TRF 50CE100 E5 sot223 06033C474KAT2A sd 431 transistor LTC4366

    ATC 600F

    Abstract: NPTB00004 transistors ND C9 GRM188R72A104KA35D ERJ2GE0R00X 01UF 100UF 10UF AD-015 Nitron
    Text: AD-015 AD-015 Nitronex NPTB00004 GaN HEMT Power Transistors Application Board Tuned for 5.1 to 5.2GHz Application design AD-015 with a Nitronex NPTB00004 GaN HEMT device has approximately 29dBm average RF power under single carrier OFDM WiMax modulation1 and approximately 11dB gain with 23% drain efficiency at 2.5% EVM


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    PDF AD-015 AD-015 NPTB00004 29dBm 150mA. 100ma AD-015: ATC 600F transistors ND C9 GRM188R72A104KA35D ERJ2GE0R00X 01UF 100UF 10UF Nitron

    PIMD3

    Abstract: No abstract text available
    Text: NPTB00004 Gallium Nitride 28V, 5W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE, and other applications from DC to 6GHz • 100% RF Tested at 2500MHz


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    PDF NPTB00004 2500MHz EAR99 6000MHz 2500MHz, NDS-002 PIMD3

    marking code diode SOT23-5 R15

    Abstract: smd code marking sot23-5 "j5" marking T4 sot23-5 Operational Amplifiers DSUB25F SOT23-5 marking code C12 PGA309EVM-USB MARKING CODE SMD IC sot23-5 smd code marking sot23-5 instrument cluster schematic can bus NXP SMD ZENER DIODE MARKING CODE
    Text: User's Guide SBOU084A – February 2010 – Revised February 2011 PGA309EVM-USB This user’s guide describes the characteristics, operation, and use of the PGA309EVM-USB evaluation module EVM . This EVM is designed to evaluate the performance of the PGA309, a voltage output,


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    PDF SBOU084A PGA309EVM-USB PGA309EVM-USB PGA309, marking code diode SOT23-5 R15 smd code marking sot23-5 "j5" marking T4 sot23-5 Operational Amplifiers DSUB25F SOT23-5 marking code C12 MARKING CODE SMD IC sot23-5 smd code marking sot23-5 instrument cluster schematic can bus NXP SMD ZENER DIODE MARKING CODE

    Untitled

    Abstract: No abstract text available
    Text: DEMO MANUAL DC1780A-C LTM4620EV: High Efficiency, PolyPhase 100A Step-Down Power µModule Regulator DESCRIPTION Demonstration circuit 1780A-C features poly phase design using the LTM®4620EV, the high efficiency, high density, dual 13A, switch mode step-down power module regulator.


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    PDF DC1780A-C LTM4620EV: 780A-C 4620EV, DC1780A-C LTM4620s LTM4620 dc1780acfa

    ATC 600F

    Abstract: NPTB00004 AD-016 100uf 16v murata tantalum GRM188R72A104KA35D 490-3285-2-ND ERJ2GE0R00X P033A 06031C103KAT2A Cer cap 100uf
    Text: AD-016 AD-016 Nitronex NPTB00004 GaN HEMT Power Transistors Application Board Tuned for 5.7 to 5.8GHz Application design AD-016 with a Nitronex NPTB00004 GaN HEMT device has approximately 27dBm average RF power under single carrier OFDM WiMax modulation1 and approximately 10dB gain with 23% drain efficiency at 2.5% EVM


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    PDF AD-016 AD-016 NPTB00004 27dBm 150mA. 100ma AD-016: ATC 600F 100uf 16v murata tantalum GRM188R72A104KA35D 490-3285-2-ND ERJ2GE0R00X P033A 06031C103KAT2A Cer cap 100uf

    12062C103KAT2A

    Abstract: 06035G104ZAT2A 1812HC102KAT1A 70001410 12065C224KAT 06035C333KAT2A 04025A180JAT2A 06031A221JAT2A 0402YC223KAT2A 12065C104JAT
    Text: 1764-2012:QuarkCatalogTempNew 9/11/12 10:47 AM Page 1764 TEST & MEASUREMENT 21 Ceramic Chip Capacitors RoHS Multilayer ceramic capacitors are available in both Class I and Class II formulations. Temperature compensating formulations are Class I and temperature stable and


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    PDF pF-22 12061A470JAT2A 06031A560JAT2A 08051A560JAT2A 08051A680JAT2A 06031A820JAT2A 06031A101FAT2A 06031A101JAT2A 06031A101KAT2A 08051A10102 12062C103KAT2A 06035G104ZAT2A 1812HC102KAT1A 70001410 12065C224KAT 06035C333KAT2A 04025A180JAT2A 06031A221JAT2A 0402YC223KAT2A 12065C104JAT

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


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    PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    GRM188R72A104KA35D

    Abstract: GaN Bias 25 watt NPTB00025 12101C105KAT2A atc600f rl0603fr UPW1C151MED 06031C103KAT2A ELXY630ELL271MK25S NBD-019
    Text: AD-001 AD-001: Nitronex NPTB00025 GaN HEMT Tuned for 2.11 to 2.17GHz Application board AD-001 with a Nitronex NPTB00025 GaN HEMT device outputs approximately 3 Watts of average RF power under single carrier WCDMA modulation1 with approximately 12.5.0 dB gain, 30+% drain efficiency and an ACPR better then 35dBc. All measurements were collected at 2.11 to 2.17GHz with a drain bias of


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    PDF AD-001 AD-001: NPTB00025 17GHz AD-001 35dBc. 17GHz 250mA. GRM188R72A104KA35D GaN Bias 25 watt 12101C105KAT2A atc600f rl0603fr UPW1C151MED 06031C103KAT2A ELXY630ELL271MK25S NBD-019

    nptb00004

    Abstract: NPTB00004DT NPTB00004D 250v m1 APP-NPTB00004-25 NPTB00004DR NBD-012 0J100 j105 250v j105100
    Text: NPTB00004 Datasheet Gallium Nitride 28V, 5W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE, and other applications from DC to 6GHz • 100% RF Tested at 2500MHz


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    PDF NPTB00004 2500MHz EAR99 6000MHz 2500MHz, NDS-002 NPTB00004DT NPTB00004D 250v m1 APP-NPTB00004-25 NPTB00004DR NBD-012 0J100 j105 250v j105100

    EIA 549 Class 130B transformer

    Abstract: mcf 300.04 capacitor 225 35k 844 SMD av 1.40.00 mkt x2 .01uf NTC 20K honeywell 1000 rpm dc motor 12v 100watt BO 680Y clarostat POTENTIOMETER 73JA SMD MARKING CODE 503b 03028BR
    Text: ND3% BASE1 XXXX0118-0396-1-P 396 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 20-07-11 Hour: 11:09 TS:TS date TS time CAPACITORS Find Datasheets Online CERAMIC CAPACITORS MULTILAYER CERAMIC CAPACITORS - 0.5pF TO 82,000pF 2 MULTILAYER CERAMIC CAPACITORS - 0.5pF TO 82,000pF CONT.


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    PDF 000pF 000pF 0201ZD103KAT2A 0201ZC103KAT2A 0201YC101KAT2A 0201YC271KAT2A 0201YC471KAT2A 02013A1R0CAT2A 02013A4R7CAT2A 02013A100JAT2A EIA 549 Class 130B transformer mcf 300.04 capacitor 225 35k 844 SMD av 1.40.00 mkt x2 .01uf NTC 20K honeywell 1000 rpm dc motor 12v 100watt BO 680Y clarostat POTENTIOMETER 73JA SMD MARKING CODE 503b 03028BR

    Untitled

    Abstract: No abstract text available
    Text: NPTB00004A Gallium Nitride 28V, 5W, DC-6 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Broadband operation from DC-6 GHz 28V Operation Industry Standard Plastic Package High Drain Efficiency >55%


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    PDF NPTB00004A NPTB00004 NPTB00004A NDS-036

    PIMD3

    Abstract: No abstract text available
    Text: NPTB00004 Gallium Nitride 28V, 5W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE, and other applications from DC to 6GHz • 100% RF Tested at 2500MHz


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    PDF NPTB00004 2500MHz EAR99 6000MHz 2500MHz, NDS-002 PIMD3

    Untitled

    Abstract: No abstract text available
    Text: Bill of Materials for the NCN7200MTGEVB Evaluation Board Designator Quantity Description U1, U2 J1, J2, J3 J4, J5 J6 J7, J8, J9, J10 J11, J12, J13, J14, J15, J16, J17, J18 C1, C9 C2, C3, C4, C5, C6, C7, C8, C10, C11, C12, C13,C14, C15, C16 F1, F2, F3, F4 F1, F2, F3, F4


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    PDF NCN7200MTGEVB NCN7200 6-32THR, NCN7200MTTWG GRM155R60J105 06031C103KAT2A 1903C WQFN42