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    0504330 Search Results

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    0504330 Price and Stock

    Excelitas Technologies Corporation G050433000

    MOUNT N 12.7
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    DigiKey G050433000 Box 5 1
    • 1 $40
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    Anytek Technology Corporation Ltd YK5050433000G

    CONN BARRIER STRIP 4CIRC 0.374"
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    DigiKey YK5050433000G Bulk 2,016
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    RS YK5050433000G Bulk 2,016
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    Interstate Connecting Components YK5050433000G
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    On-Shore Technology Inc OSTYK50504330

    CONN BARRIER STRIP 4CIRC 0.374"
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    DigiKey OSTYK50504330 Bulk 40
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    Abracon Corporation ASPI-0504-330M-T

    IND 33UH 0.88A 230M
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    DigiKey ASPI-0504-330M-T Reel 1,500
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    Avnet Americas ASPI-0504-330M-T Reel 20 Weeks 1,500
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    Mouser Electronics ASPI-0504-330M-T
    • 1 $0.53
    • 10 $0.454
    • 100 $0.337
    • 1000 $0.24
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    Abracon Corporation ASPI-0504-330K-T

    FIXED IND 33UH 880MA 230MOHM SMD
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    DigiKey ASPI-0504-330K-T Cut Tape 1
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    ASPI-0504-330K-T Digi-Reel 1
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    ASPI-0504-330K-T Reel 1,500
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    Avnet Americas ASPI-0504-330K-T Reel 20 Weeks 1,500
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    • 10000 $0.18635
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    Mouser Electronics ASPI-0504-330K-T
    • 1 $0.43
    • 10 $0.406
    • 100 $0.376
    • 1000 $0.348
    • 10000 $0.23
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    Newark ASPI-0504-330K-T Reel 1,500
    • 1 $0.264
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    0504330 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TMPT6429

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS INC 8 5 1 4 0 1 9 SP RA GU E. ^3 D • 0504330 0003b0L 4 ■ AL6R S E M I C O N D S / ICS 93 D 0 3 6 0 6 J . SMALL-OUTLINE BIPOLAR TRANSISTORS NPN Transistors ELECTRICAL CHARACTERISTICS at TA = 25°C IcBO 40 30 40 60 40 40 25 40 30 25


    OCR Scan     		PDF 0003b0L TMPT2221A TMPT2222 TMPT2222A TMPT2484 TMPT3903 TMPT3904 TMPT4124 TMPT4401 TMPT5088 TMPT6429

    TPQ2222

    Abstract: TPQ6700 tpq2369 2n2222 transistor pin b c e 2N3904 WPSA05 a1005-0a TPQ2907A TPQ6002
    Text: ALLEGRO MICROSYSTEMS INC , 33E 0504330 0005713 mmÊm• 4 SLGR 'T -m v z ^ QUAD TRANSISTOR ARRAYS S eries T P Q quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic


    OCR Scan     		PDF 14-pin TPQ2222 TPQ2222A TPQ2369 TPQ6427 TPQ3904 TPQA06 TPQA05 TPQ2907 TPQ2907A TPQ6700 2n2222 transistor pin b c e 2N3904 WPSA05 a1005-0a TPQ6002

    mpsa25c

    Abstract: MPS-A12 MPS6576C
    Text: AL L E GRO MI C ROS Y S T E MS I NC T3 D • 0504330 DDQBSbb - 8514019 SPRAGUE. 7 ■ ALGR , ^ 93D 03566 3 ' X ' f l i l ~\£> SEMICONDS / ICS BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C Device Type


    OCR Scan     		PDF MPS6521C MPS6530C MPS6531C MPS6532C mpsa25c MPS-A12 MPS6576C

    transistor a1023

    Abstract: ULN2083A transistor D 667 C S2083 transistor D 667 S2083H
    Text: AL L E GRO MI C ROS Y S T E MS 8 5 1 4 0 1 9 S P R A GU E. I NC T3 0504330 D S E M I C O N D S / ICS 0003022 T • ALGR 93 D 03 8 2 2 ULN-2083A AND ULS-2083H TRANSISTOR ARRAYS ULN-2083A AND ULS-2083H TRANSISTOR ARRAYS Five Independent NPN Transistors ■ p \E S IG N E D for use in general purpose, medium


    OCR Scan     		PDF ULN-2083A ULS-2083H -2083A S2083H transistor a1023 ULN2083A transistor D 667 C S2083 transistor D 667

    603 transistor npn

    Abstract: 2N3906 DS transistor BC 312 603 transistor npn dj bipolar BC transistor BC847C di PN 2n2222A 2n3904 2n3906
    Text: ALLEGRO MICROSYSTEMS INC bbE D • 0504330 000b515 4bS ■ ALGR BIPOLAR TRANSISTORS ELECTRICAL CHARACTERISTICS at T = + 25°C A ^CBO 'c Max. V BH CBO V (BR)CEO V(BR)EBO Max. <mA) (V) (V) (V) (nA) ^CEO @ V CB Max. @ v CE (V) (nA) (V) Device Allegro Type Type


    OCR Scan     		PDF 000b515 2N918 2N2222A 2N2369 2N2484 2N2907A 2N2945 2N3019 2N3117 2N3251A 603 transistor npn 2N3906 DS transistor BC 312 603 transistor npn dj bipolar BC transistor BC847C di PN 2n2222A 2n3904 2n3906

    Untitled

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS INC TB ] • 0504330 0003bS5 b ■ ALGR r - 9 )• O i PROCESS BLA Process BLA NPN High-Voltage Transistor The NPN process BLA transistor is a double­ diffused silicon epitaxial planar device used primarily in video circuits and similar high-voltage, low-current


    OCR Scan     		PDF 0003bS5 D50433Ã GG03b5b

    Untitled

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS INC LIE ]> • 0504330 000b3A7 ■ A L 6R PNP TRANSISTORS TO-92ITO-226AA V*3 W and ‘T P DEVICE TYPES ELECTRICAL CHARACTERISTICS at TA = 25°C 'cBO DC Current Gain v CEIMl] * le V Max. v BR CBO V y(BR>CEO * (BR)EBO Max. @ v CB hFE K e


    OCR Scan     		PDF 000b3A7 O-92ITO-226AA TP2907 TP2907A

    THC3251A

    Abstract: pnp for 2n3019 312 2N3904 2N4033 2N3906 DS 2N3117 2n5401 2n3904 bcy71 ALTERNATIVE 2N2222A 2N2369
    Text: ALLEGRO MICROSYSTEMS INC bbE D • 0504330 000b515 4bS ■ ALGR BIPOLAR TRANSISTORS ELECTRICAL CHARACTERISTICS at T = + 25°C A ^CBO 'c Max. V BH CBO V (BR)CEO V(BR)EBO Max. <mA) (V) (V) (V) (nA) ^CEO @ V CB Max. @ v CE (V) (nA) (V) — — Device Allegro


    OCR Scan     		PDF SG433a 2N918 THC918 2N2222A THC2222A 2N2369 THC2369 2N2484 THC2484 2N2907A THC3251A pnp for 2n3019 312 2N3904 2N4033 2N3906 DS 2N3117 2n5401 2n3904 bcy71 ALTERNATIVE

    Untitled

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS INC T3 D • 0504330 0G037G5 b ■ T-91-01 PROCESS JLA Process JLA NPN Small-Signal Transistor P ro c e ss J L A is a double-diffused epitaxial planar N P N silicon device. It is d esign ed for u se in generalp urp ose amplifier and high-current switching circuits.


    OCR Scan     		PDF 0SD433Ã DDD37DS T-91-01 800mA D37Db T-91-Q1

    transistor a13

    Abstract: A13 transistor
    Text: ALLEGRO MICROSYSTEMS INC T3]> ] • 0504330 G0G3b37 4 P R O CESS A JA T -^ l "O I Process AJA NPN Small-Signal Transistor Process A JA is a double-diffused epitaxial silicon transistor designed for use in medium-power, general-purpose amplifiers and as a switch for line volt­


    OCR Scan     		PDF 0003b37 transistor a13 A13 transistor

    Untitled

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS INC 8514019 SPRAGUE. =53 I> • 0504330 000356b 2 ■ AL6R S E M IC O N D S / IC S 93D 03586 PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C 2N3416 2N3417 TP3444


    OCR Scan     		PDF 000356b 2N3416 2N3417 TP3444 TP3564 TP3565 TP3566 TP3567 TP3568 TP3569

    faa 13

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS INC ^3 D • 0504330 0Q03bfi7 Ö ■ T-91-01 PROCESS FAA Process FAA PNP High-Power Transistor Process FAA is a double-diffused epitaxial planar PN P silicon device designed as a high-speed, highcurrent switch and for use in other high-power


    OCR Scan     		PDF 0Q03bfi7 T-91-01 0003L> faa 13

    Untitled

    Abstract: No abstract text available
    Text: ALLEGRO NICROSYSTEMS INC T3D J> U 0504330 0003715 H • ALCR PRO CESS SLL Process SLL PNP Small-Signal Transistor Process SLL is a double-diffused epitaxial planar PNP silicon device. It is designed for use in generalpurpose amplifier and switching applications. Its


    OCR Scan     		PDF

    NPN Transistor BC548B

    Abstract: BC548 BC238B npn bc337-40 npn transistor
    Text: ALLEGRO MICROSYSTEMS INC 14 D • 0504330 00047^4 3 ■ ALGR T~^9-0| SPRAGUE PROELECTRON T092J TRANSISTOR TYPES»! PROELECTRON T092 TRANSISTOR TYPES Typ« No. Polarity Chip Process BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB BC212LA BC212LB


    OCR Scan     		PDF T092J BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB NPN Transistor BC548B BC548 BC238B npn bc337-40 npn transistor

    Untitled

    Abstract: No abstract text available
    Text: AL L E G R O MICROSYSTEMS INC » 0504330 0 0 0 3 7 Ô 1 Q I ALGR T-91-01 PROCESS BQB Process BQB Power Schottky Diode P ro c e ss B Q B is a silicon Schottky-barrier diode with a typical breakdown-voltage rating of 45V. D e ­ sign e d for high-power applications, it ca n sustain a


    OCR Scan     		PDF 0S0433Ã DG037Ã T-91-01

    THC697

    Abstract: THC699 THC718 THC760 THC760A THC915 THC916 THC917
    Text: ALL E GR O M I C R O S Y S T E M S INC 8 5 1 4 0 1 9 S P R A GU E. “13 5 • 0504330 0003550 S E M I C O N D S / ICS 3 ■ AL 6R l'Alto 93 D 0 3 5 5 8 P BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘TH ’ Device Types E LE C T R IC A L CH ARACTERISTICS at TA = 25°C


    OCR Scan     		PDF 05G433Ã 03558P BRJC80 THC697 THC699 THC718 THC760 THC2222 THC2222A THC2243 THC760A THC915 THC916 THC917

    Untitled

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS INC T3 D • 0504330 DD037S3 t> ■ î-91-01 P R O C E S S NJ16 Process NJ16 N-Channel Junction Field-Effect Transistor Process NJ16 is an N-channel junction fieid-effect transistor designed for low-current, general-purpose applications. This process is particularly useful in


    OCR Scan     		PDF DD037S3 50433A T-91-01

    A80G

    Abstract: back-emf motor A8932CLW
    Text: ALLEGRO MICROSYSTEMS INC 33E 0504330 0005340 IAL6R VO ICE C O IL M O TO R D R IV E R Providing control and drive of the voice coil motor used for head positioning in 5 V disk drive applications,-the A8932CLW is a full-bridge driver which can be configured so that its output current is a direct


    OCR Scan     		PDF PP-042 A8932CLW uvT01D A80G back-emf motor

    A13 transistor

    Abstract: No abstract text available
    Text: L _ . , . AL L E G R O M I C R O S Y S T E M S INC T3 » • 0504330 0003^5 7 ■ AL6R T-91-01 PROCESS FEE Process FEE NPN Small-Signal Transistor The F E E Process results in double-diffused silicon


    OCR Scan     		PDF T-91-01 DS0433Ã T-91-01 A13 transistor

    UDN2951Z-2

    Abstract: Q19A UDN2955W-2
    Text: ALLEGRO MICROSYSTEMS INC 33E D 0504330 » A .* * - ' ^ .s U '.U L . JJ 0005155 L.' J « ’ » '.V 7 • /l|L6R Í f T - 5Z - n HIGH-CURRENT HALF-BRIDGE POWER DRIVER GROUND ~ SUPPLY E l NO CONNECTION E l SOURCE OUT E l o SOURCE IN E l SENSE E l ENABLE | SINK IN E l


    OCR Scan     		PDF PP-023 UDN2955W-2 UDN2951Z-2 Q19A

    Untitled

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS INC T3 D • 0504330 0 0 0 3 7 clb 2 ■ ALGR T-91-01 PROCESS YAA Process YAA Power Diode Process YAA is a silicon epitaxial P on N diode designed for high-power applications. It can operate with a forward current of up to 3A. r * - ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF 0SQ433Ã OG37clb T-91-01 /-55C

    MPS3405C

    Abstract: MPS3414C MPS3415C MPS3416C MPS3417C MPS3563C MPS3565C MPS3566C MPS3567C MPS3568C
    Text: ALLEGRO MICROSYSTEMS INC 85 140 19 SP RA GU E. D T3 • 0504330 G0G3SbS S ■! AL6R S E M I C O N D S / ICS TA 9 3 D 03 5 6 5 ^ BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘MPS’ Device Types E LE C T R IC A L CH ARACTERISTICS at TA = 25°C DC Current Gain


    OCR Scan     		PDF G5DM33Ã MPS3405C MPS3414C MPS3415C MPS3416C MPS3417C 1807C MPS5172C MPS5305C MPS5306C MPS3563C MPS3565C MPS3566C MPS3567C MPS3568C

    Untitled

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS INC 33 E D 0504330 000Sb2ô 2 BIAL GR COUNTDOWN POWER TIMERS MODE SELECT NO CONNECTION NO CONNECTION Dwg. PS-016 The ULQ2436M and ULQ2437M are rugged, long-duration count­ down timers specifically designed to operate in an automotive or


    OCR Scan     		PDF 000Sb2Ã PS-016 ULQ2436M ULQ2437M ES-013

    Untitled

    Abstract: No abstract text available
    Text: AL L E G R O MICROSYSTEMS INC T3 » • 0504330 0003bôl 7 ■ ALGR T-91-01 PROCESS DMA Process DMA NPN Small-Signal Transistor Process DMA is a double-diffused NPN silicon epitaxial planar device designed for use in VH F and UHF amplifiers, mixers, and oscillators.


    OCR Scan     		PDF 0003bà T-91-01 QS0433Ã