sud35n10
Abstract: No abstract text available
Text: New Product SUD35N10-26P Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ) 100 0.026 at VGS = 10 V 35 31 nC • TrenchFET Power MOSFET • 100 % UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch
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SUD35N10-26P
O-252
SUD35N10-26P-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
sud35n10
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Si4626ADY
Abstract: No abstract text available
Text: New Product Si4626ADY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0033 at VGS = 10 V 30 0.0041 at VGS = 4.5 V 26.3 VDS (V) 30 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) RoHS COMPLIANT
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Si4626ADY
Si4626ADY-T1-E3
08-Apr-05
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S-80183
Abstract: No abstract text available
Text: SUM60N02-3m9P Vishay Siliconix N-Channel 20-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0039 at VGS = 10 V 60 0.0052 at VGS = 4.5 V 60 V(BR)DSS (V) 20 TrenchFET Power MOSFET 175 °C Junction Temperature 100 % Rg Tested 100 % UIS Tested
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SUM60N02-3m9P
O-263
SUM60N02-3m9P-E3
18-Jul-08
S-80183
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Si5499DC
Abstract: pf42-08
Text: New Product Si5499DC Vishay Siliconix P-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)e 0.036 at VGS = - 4.5 V -6 0.045 at VGS = - 2.5 V -6 0.056 at VGS = - 1.8 V -6 0.077 at VGS = - 1.5 V -6 VDS (V) -8 Qg (Typ.) • TrenchFET Power MOSFET: 1.5 V Rated
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Si5499DC
Si5499DC-T1-E3
18-Jul-08
pf42-08
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SI3447CDV
Abstract: No abstract text available
Text: New Product Si3447CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.036 at VGS = - 4.5 V - 7.8 0.050 at VGS = - 2.5 V - 6.6 0.068 at VGS = - 1.8 V - 5.6 VDS (V) - 12 • TrenchFET Power MOSFET • PWM Optimized
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Si3447CDV
Si3447CDV-T1-E3
08-Apr-05
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SUD35N10-26P
Abstract: No abstract text available
Text: New Product SUD35N10-26P Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ) 100 0.026 at VGS = 10 V 35 31 nC • TrenchFET Power MOSFET • 100 % UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch
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SUD35N10-26P
O-252
SUD35N10-26P-E3
08-Apr-05
SUD35N10-26P
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PDF
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Si4626ADY
Abstract: No abstract text available
Text: New Product Si4626ADY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0033 at VGS = 10 V 30 0.0041 at VGS = 4.5 V 26.3 VDS (V) 30 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) RoHS COMPLIANT
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Si4626ADY
Si4626ADY-T1-E3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Package Information Vishay Siliconix PowerPAK 2 x 5 K E2 K L θ L 2 D1 D 4 D2 e 5 2 4 3 θ 3 1 6 Z b 6 1 L1 BACKSIDE VIEW OF SINGLE PAD θ A1 c A θ 2 E1 DETAIL Z E Notes 1. Dimensions in millimeters will govern. 2. Dimensions exclusive of mold gate burrs.
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T-08019-Rev.
04-Feb-08
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ptc 585
Abstract: TLWR7600 VLWY9630
Text: VLWY9630 Vishay Semiconductors TELUX 19232 DESCRIPTION The TELUX series is a clear, non diffused LED for applications where supreme luminous flux is required. It is designed in an industry standard 7.62 mm square package utilizing highly developed with super bright,
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VLWY9630
18-Jul-08
ptc 585
TLWR7600
VLWY9630
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uPD78F1168GC-16BT
Abstract: VT-200
Text: 78K0R/KG3 04-Feb-08 Evaluation of Subsystem Clock Oscillation Circuit [uPD78F1168GC-16BT] QFP 14x14 0.50mm pitch Measurement conditions : 5.0V Model Vdd=1.8 to 5.5V :VT-200 IC Frequency :Fo=32.768kHz Frequency tolerance :dF/Fo= +/-20x10-6 Load capacitance
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78K0R/KG3
04-Feb-08
uPD78F1168GC-16BT
14x14)
VT-200
768kHz
/-20x10-6
1x10-6F
50kohm
1x10-6W
VT-200
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Untitled
Abstract: No abstract text available
Text: New Product Si1072X Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.093 at VGS = 10 V 1.3a 0.129 at VGS = 4.5 V 1.2 Qg (Typ.) 5.41 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS APPLICATIONS
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Si1072X
SC-89
Si1072X-T1-E3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: SUP90N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 150 0.018 at VGS = 10 V 90d 64 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT
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SUP90N15-18P
O-220AB
SUP90N15-18P-E3
11-Mar-11
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vr1 500
Abstract: 8S2TH06FP
Text: New Product 8S2TH06FP Vishay High Power Products Hyperfast Rectifier, 8 A FEATURES • Hyperfast recovery time RoHS • Low forward voltage drop COMPLIANT • Low leakage current • 175 °C operating junction temperature • Designed and qualified for industrial level
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8S2TH06FP
8S2TH06FP
12-Mar-07
vr1 500
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Untitled
Abstract: No abstract text available
Text: SUP60N02-4m5P Vishay Siliconix N-Channel 20-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0045 at VGS = 10 V 60 0.0065 at VGS = 4.5 V 60 V(BR)DSS (V) 20 • • • • TrenchFET Power MOSFET 175 °C Junction Temperature 100 % Rg Tested
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SUP60N02-4m5P
O-220AB
SUP60N02-4m5P-E3
08-Apr-05
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SUP90N15-18P
Abstract: SUP90N15-18P-E3
Text: SUP90N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 150 0.018 at VGS = 10 V 90d 64 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT
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SUP90N15-18P
O-220AB
SUP90N15-18P-E3
11-Mar-11
SUP90N15-18P
SUP90N15-18P-E3
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Si7905DN
Abstract: Si7905DN-T1-E3
Text: New Product Si7905DN Vishay Siliconix Dual P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 rDS(on) (Ω) ID (A) 0.060 at VGS = - 10 V - 6e 0.089 at VGS = - 4.5V - 5f Qg (Typ.) 11 nC • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®
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Si7905DN
Si7905DN-T1-E3
08-Apr-05
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SUP60N02-4M5P-E3
Abstract: No abstract text available
Text: SUP60N02-4m5P Vishay Siliconix N-Channel 20-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0045 at VGS = 10 V 60 0.0065 at VGS = 4.5 V 60 V(BR)DSS (V) 20 • • • • TrenchFET Power MOSFET 175 °C Junction Temperature 100 % Rg Tested
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SUP60N02-4m5P
O-220AB
SUP60N02-4m5P-E3
18-Jul-08
SUP60N02-4M5P-E3
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DG611
Abstract: DG613AEY-T1-E3 DG613AEY
Text: New Product DG611A/DG612A/DG613A Vishay Siliconix 1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches DESCRIPTION FEATURES The DG611A, DG612A and DG613A contain four independently selectable SPST switches. They offer improved performance over the industry standard DG611
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DG611A/DG612A/DG613A
DG611A,
DG612A
DG613A
DG611
DG611A
18-Jul-08
DG611
DG613AEY-T1-E3
DG613AEY
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SUD40N02-3M3P-E3
Abstract: No abstract text available
Text: New Product SUD40N02-3m3P Vishay Siliconix N-Channel 20-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0033 at VGS = 10 V 40 0.0044 at VGS = 4.5 V 40 VDS (V) 20 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg Tested RoHS COMPLIANT
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SUD40N02-3m3P
O-252
SUD40N02-3m3P-E3
18-Jul-08
SUD40N02-3M3P-E3
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Si1563EDH
Abstract: diode 0750 SI1563EDH-T1
Text: New Product Si1563EDH Vishay Siliconix Complementary 20-V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 rDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.0 0.490 at VGS = - 4.5 V
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Si1563EDH
OT-363
SC-70
SC-70
18-Jul-08
diode 0750
SI1563EDH-T1
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SI3447CDV
Abstract: No abstract text available
Text: New Product Si3447CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.036 at VGS = - 4.5 V - 7.8 0.050 at VGS = - 2.5 V - 6.6 0.068 at VGS = - 1.8 V - 5.6 VDS (V) - 12 • TrenchFET Power MOSFET • PWM Optimized
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Si3447CDV
Si3447CDV-T1-E3
18-Jul-08
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AT91SAM9XE-EK Evaluation Board User Guide
Abstract: DM9161A LFBGA217 ARM926EJ-S AT73C213 AT91SAM9XE CR1225 PQFP208 PQFP208 footprint schematics nand flash controller
Text: AT91SAM9XE-EK Evaluation Board . User Guide 6311A–ATARM–04-Feb-08 Table of Contents Section 1 Overview . 1-1
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AT91SAM9XE-EK
04-Feb-08
AT91SAM9XE-EK Evaluation Board User Guide
DM9161A
LFBGA217
ARM926EJ-S
AT73C213
AT91SAM9XE
CR1225
PQFP208
PQFP208 footprint
schematics nand flash controller
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SIP42104
Abstract: No abstract text available
Text: SiP42104 Vishay Siliconix H-Bridge Driver and Pulse Width Controller for Digital Camera Micro Modules DESCRIPTION FEATURES The SiP42104 is a 250 mA integrated H-bridge driver and programmable output-pulse-width controller. It offers a complete and cost-effective solution for micro camera focus
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SiP42104
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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BME6-2RN373
Abstract: No abstract text available
Text: A. F O - 5 5 1 1 1 -A HONEYWELL PART NUMBER REV B DOCUMENT 0 038308 CH A NG E D BY KVS 01AP R 08 CHECK ASD B M E 6-2R N 373 COMPONENTS BY EXTERNAL BANDING HAROENED STEEL PLUNGER 3.0404.030 .33 OIA .47 SPHERICAL R 6 -3 2 UNC X I.OOO REF FLAT HEAD SELF LOCKING SCREW
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BME6-2RN373
01APR08
2A-125,
1/2A-125
1AA-250
04FEB08
5M-1994
BME6-2RN373
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