XA2 MMIC
Abstract: TOP MARKING C1 ROHM lot No MPO-100136 SIRENZA Sirenza C4 marking
Text: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable
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SXA-289
SXA-289
MPO-100136
016REF
118REF
041REF
015TYP
EDS-100622
XA2 MMIC
TOP MARKING C1 ROHM lot No
SIRENZA
Sirenza C4 marking
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Sirenza amplifier SOT-89 Marking
Abstract: .XA2
Text: Not Recommended for New Designs Product Description SXH-189 Sirenza Microdevices’ SXH-189 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth
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SXH-189
SXH-189
SXA-289
016REF
118REF
041REF
EDS-101247
Sirenza amplifier SOT-89 Marking
.XA2
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1485C
Abstract: SE 194 Sirenza amplifier SOT-89
Text: Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable
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SXA-389B
SXA-389B
MPO-100136
016REF
118REF
041REF
015TYP
EDS-102915
1485C
SE 194
Sirenza amplifier SOT-89
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Xa2 TRANSISTOR
Abstract: XA2 MMIC SXA-289 Sirenza amplifier SOT-89 marking XA2 EDS-100622 RF transistor marking IN SOT-89 sxa289 TOP MARKING C1 ROHM ROHM SOT89 MARKING
Text: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable
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SXA-289
SXA-289
016REF
118REF
041REF
EDS-100622
Xa2 TRANSISTOR
XA2 MMIC
Sirenza amplifier SOT-89
marking XA2
RF transistor marking IN SOT-89
sxa289
TOP MARKING C1 ROHM
ROHM SOT89 MARKING
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Xa2 TRANSISTOR
Abstract: transistor 289 MMIC "SOT 89" marking SXA-289 rf power amplifier 850 MHZ
Text: Preliminary Product Description Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable
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SXA-289
016REF
118REF
041REF
EDS-100622
Xa2 TRANSISTOR
transistor 289
MMIC "SOT 89" marking
rf power amplifier 850 MHZ
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SXT-289
Abstract: transistor 289 marking 25 mmic sot-89 MMIC "SOT 89" marking Xa2 marking Xa2 TRANSISTOR xamp 034 XA2 MMIC
Text: Product Description Stanford Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth
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SXT-289
Pate02
016REF
118REF
041REF
EDS-101157
transistor 289
marking 25 mmic sot-89
MMIC "SOT 89" marking
Xa2 marking
Xa2 TRANSISTOR
xamp 034
XA2 MMIC
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marking 25 mmic sot-89
Abstract: RF transistor marking IN SOT-89 MARKING 30 SOT89 DBM
Text: Product Description Stanford Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth
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SXT-289
SXT-289
016REF
118REF
041REF
EDS-101157
marking 25 mmic sot-89
RF transistor marking IN SOT-89
MARKING 30 SOT89 DBM
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Xa3 TRANSISTOR
Abstract: 041R 267M3502104 MCH18 SXA-389 MMIC "SOT 89" marking
Text: Product Description SXA-389 Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable
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SXA-389
SXA-389
MPO-100136
016REF
118REF
041REF
015TYP
EDS-102231
Xa3 TRANSISTOR
041R
267M3502104
MCH18
MMIC "SOT 89" marking
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MCH18
Abstract: SXA-389B xa3b EL115
Text: Preliminary Product Description SXA-389B Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular
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SXA-389B
SXA-389B
MPO-100136
016REF
118REF
041REF
015TYP
EDS-102915
MCH18
xa3b
EL115
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xa3b
Abstract: No abstract text available
Text: SXA-389B SXA-389BZ Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surfacemountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent
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SXA-389B
SXA-389BZ
MPO-100136
016REF
118REF
041REF
015TYP
SXA-389B
EDS-102915
xa3b
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XA2 MMIC
Abstract: MPO-100136 TOP MARKING C1 ROHM lot No
Text: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable
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SXA-289
SXA-289
MPO-100136
016REF
118REF
041REF
015TYP
EDS-100622
XA2 MMIC
TOP MARKING C1 ROHM lot No
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marking xt2 mmic
Abstract: EDS-101157 MCH18 MCR03 SXT-289 267M3502104 Sirenza amplifier SOT-89
Text: Product Description SXT-289 Sirenza Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth
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SXT-289
SXT-289
016REF
118REF
041REF
EDS-101157
marking xt2 mmic
MCH18
MCR03
267M3502104
Sirenza amplifier SOT-89
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267M3502104K
Abstract: 2425-C
Text: Preliminary Product Description SXB-4089 Sirenza Microdevices’ SXB-4089 amplifier is a high efficiency InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost, surface-mountable plastic package. 400-2500 MHz ½ W Medium Power InGaP/GaAs HBT Amplifier with
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SXB-4089
SXB-4089
45propriate
MPO-100136
016REF
118REF
041REF
015TYP
EDS-103215
267M3502104K
2425-C
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Xa3 TRANSISTOR
Abstract: matsuo
Text: Preliminary Product Description SXA-389 Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable
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SXA-389
SXA-389
016REF
118REF
041REF
EDS-102231
Xa3 TRANSISTOR
matsuo
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Untitled
Abstract: No abstract text available
Text: Preliminary Product Description SXA-389 Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable
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SXA-389
SXA-389
016REF
118REF
041REF
EDS-102231
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