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    04 TRANSISTOR Search Results

    04 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
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    04 TRANSISTOR Price and Stock

    Phoenix Contact NLC-START-04

    24 V DC base unit with PNP transistor outputs, LCD display, USB module, serial cable, input and output simulators, Ethernet, RTC and PNP I/O modules, 24 V DC power supply and Quick Start Guide. Components are assembled, mounted and wired on panel (North American AC power cord).
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com NLC-START-04
    • 1 $572.45
    • 10 $525.79
    • 100 $525.79
    • 1000 $525.79
    • 10000 $525.79
    Buy Now

    04 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ESR3-NO-31

    Abstract: TPD11DIL EMR4-W500-2-C EMR4-W580-2-D EMR4-W500-2-D VS1DIL esr4-no-31 ETR4-69-A ETR4-70-A DIL-R-44D
    Text: 04/001 Moeller HPL0211-2001/2002 Control relays Contactor relays AC and DC operated AC and DC operated System overview Page 04/002 ‘Easy’ control relays Basic units 04/006 04/006 Accessories Expansion units 04/008 04/007 Technical data 04/037 Dimensions


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    PDF HPL0211-2001/2002 Tri2002 ESR3-NO-31 ESR4-NO-31 ESR4-NO-21 ESR4-NM-21 ESR4-NZ-21 ESR4-NT30-30 ESR4-NE-42 ESR4-VE3-42 TPD11DIL EMR4-W500-2-C EMR4-W580-2-D EMR4-W500-2-D VS1DIL esr4-no-31 ETR4-69-A ETR4-70-A DIL-R-44D

    Untitled

    Abstract: No abstract text available
    Text: REVISIONS PART NO. MPX02P ECN # REV DESCRIPTION DRAWN DATE CHECKD DATE APPRVD DATE - A RELEASED Kiran 15/04/09 Suresh 15/04/09 Farnell 29/04/09 Dimensions: Inches Millimetres Part Number Table Description Part Number Transistor Pad, Black TO92 MPX02P http://www.farnell.com


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    PDF MPX02P M10002111

    80NF03

    Abstract: 80NF03L 80NF03L-04 STP80NF03L-04 STB80NF03L-04T4 80nf STB80NF03L-04 STB80NF03L-04-1 TRANSISTOR 023
    Text: STP80NF03L-04 STB80NF03L-04 STB80NF03L-04-1 N-CHANNEL 30V - 0.0035 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STB80NF03L-04/-1 STP80NF03L-04 30 V 30 V <0.004 Ω <0.004 Ω 80 A 80 A TYPICAL RDS(on) = 0.0035Ω


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    PDF STP80NF03L-04 STB80NF03L-04 STB80NF03L-04-1 D2PAK/I2PAK/TO-220 STB80NF03L-04/-1 O-262 O-263 80NF03 80NF03L 80NF03L-04 STP80NF03L-04 STB80NF03L-04T4 80nf STB80NF03L-04-1 TRANSISTOR 023

    3P03L04

    Abstract: ANPS071E INFINEON smd PART MARKING IPI80P03P3L-04 INFINEON PART MARKING DIODE smd marking Ag IPB80P03P3L-04 IPP80P03P3L-04 package to220 DIODE smd marking code UM 31
    Text: Target data sheet IPI80P03P3L-04 IPP80P03P3L-04,IPB80P03P3L-04 OptiMOS -P Power-Transistor Product Summary Feature -30 VDS • P-Channel RDS on max. SMD version • Enhancement mode • Automotive AEC Q101 qualified 4 ID • Logic Level P- TO262 -3-1 V


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    PDF IPI80P03P3L-04 IPP80P03P3L-04 IPB80P03P3L-04 IPP80P03P3L-04 3P03L04 BIPP80P03P3L-04, 3P03L04 ANPS071E INFINEON smd PART MARKING IPI80P03P3L-04 INFINEON PART MARKING DIODE smd marking Ag IPB80P03P3L-04 package to220 DIODE smd marking code UM 31

    80NF03

    Abstract: 80NF03L 80nf03l-04 STP80NF03L-04
    Text: STP80NF03L-04 STB80NF03L-04 STB80NF03L-04-1 N-CHANNEL 30V - 0.0035 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET TYPE STB80NF03L-04/-1 STP80NF03L-04 • ■ ■ ■ VDSS R DS on ID 30 V 30 V <0.004 Ω <0.004 Ω 80 A 80 A TYPICAL RDS(on) = 0.0035Ω


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    PDF D2PAK/I2PAK/TO-220 STB80NF03L-04/-1 STP80NF03L-04 STP80NF03L-04 STB80NF03L-04 STB80NF03L-04-1 O-263 O-262 O-220 80NF03 80NF03L 80nf03l-04

    80NF03

    Abstract: 80NF03L 80nf03l-04 80nf 3240A STP80NF03L-04 STB80NF03L-04 N STB80NF03L-04 STB80NF03L-04-1 STB80NF03L-04T4
    Text: STP80NF03L-04 STB80NF03L-04 STB80NF03L-04-1 N-CHANNEL 30V - 0.0035 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET TYPE STB80NF03L-04/-1 STP80NF03L-04 • ■ ■ ■ VDSS R DS on ID 30 V 30 V <0.004 Ω <0.004 Ω 80 A 80 A TYPICAL RDS(on) = 0.0035Ω


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    PDF STP80NF03L-04 STB80NF03L-04 STB80NF03L-04-1 D2PAK/I2PAK/TO-220 STB80NF03L-04/-1 O-262 O-263 80NF03 80NF03L 80nf03l-04 80nf 3240A STP80NF03L-04 STB80NF03L-04 N STB80NF03L-04-1 STB80NF03L-04T4

    3PN0604

    Abstract: TRANSISTOR SMD MARKING CODE 04 IPB100N06S3-04 IPI100N06S3-04 IPP100N06S3-04 PG-TO263-3-2
    Text: IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3-04 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 4.1 mΩ ID 100 A • MSL1 up to 260°C peak reflow


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    PDF IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 SP0001-02220 3PN0604 3PN0604 TRANSISTOR SMD MARKING CODE 04 IPB100N06S3-04 IPI100N06S3-04 IPP100N06S3-04 PG-TO263-3-2

    2n0404

    Abstract: ANPS071E SPB80N04S2-04 OPTIMOS TRANSISTOR transistor smd code marking 420 TRANSISTOR SMD MARKING CODE 42 TRANSISTOR SMD MARKING CODE ag SPI80N04S2-04 SPP80N04S2-04 DSA003760
    Text: SPI80N04S2-04 SPP80N04S2-04,SPB80N04S2-04 OptiMOS Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • 175°C operating temperature P- TO262 -3-1 • Avalanche rated VDS 40 V RDS on max. SMD version 3.4 mΩ ID 80 A P- TO263 -3-2


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    PDF SPI80N04S2-04 SPP80N04S2-04 SPB80N04S2-04 SPP80N04S2-04 Q67040-S4260 2N0404 Q67040-S4257 2n0404 ANPS071E SPB80N04S2-04 OPTIMOS TRANSISTOR transistor smd code marking 420 TRANSISTOR SMD MARKING CODE 42 TRANSISTOR SMD MARKING CODE ag SPI80N04S2-04 DSA003760

    4P03L04

    Abstract: 4p03 IPB80P03P4L-04 146a marking diode DIODE smd marking Ag PG-TO263-3-2 IPI80P03P4L-04 IPP80P03P4L-04 4p03l
    Text: IPB80P03P4L-04 IPI80P03P4L-04, IPP80P03P4L-04 OptiMOS -P2 Power-Transistor Product Summary V DS -30 V R DS on (SMD Version) 4.1 mΩ ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1


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    PDF IPB80P03P4L-04 IPI80P03P4L-04, IPP80P03P4L-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4P03L04 IPI80P03P4L-04 4P03L04 4p03 IPB80P03P4L-04 146a marking diode DIODE smd marking Ag PG-TO263-3-2 IPI80P03P4L-04 IPP80P03P4L-04 4p03l

    3N0404

    Abstract: infineon smd package
    Text: Preliminary Data Sheet IPB80N04S3-04 IPI80N04S3-04, IPP80N04S3-04 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 3.9 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1


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    PDF IPB80N04S3-04 IPI80N04S3-04, IPP80N04S3-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB80N04S3-04 IPI80N04S3-04 3N0404 infineon smd package

    IPP120P04P4-04

    Abstract: 340ua IPI120P04P4-04 4P04
    Text: IPB120P04P4-04 IPI120P04P4-04, IPP120P04P4-04 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 3.5 mW ID -120 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1


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    PDF IPB120P04P4-04 IPI120P04P4-04, IPP120P04P4-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI120P04P4-04 IPP120P04P4-04 340ua 4P04

    IPB100P03P3L-04

    Abstract: 864V 3P03L04 optimos battery protection reverse IPI100P03P3L-04 IPP100P03P3L-04 PG-TO263-3-2
    Text: IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L-04 OptiMOS -P Trench Power-Transistor Product Summary V DS Features -30 R DS on ,max (SMD version) • P-channel - Logic Level - Enhancement mode 4 ID • Automotive AEC Q101 qualified V mΩ -100 A • MSL1 up to 260°C peak reflow


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    PDF IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3P03L04 IPI100P03P3L-04 IPB100P03P3L-04 864V 3P03L04 optimos battery protection reverse IPI100P03P3L-04 IPP100P03P3L-04 PG-TO263-3-2

    3PN06L04

    Abstract: SMD code d59 TRANSISTOR SMD MARKING CODE 04 IPI100N06S3L-04 d59 smd IPB100N06S3L-04 IPP100N06S3L-04 PG-TO263-3-2
    Text: IPB100N06S3L-04 IPI100N06S3L-04, IPP100N06S3L-04 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 3.5 mΩ ID 100 A • MSL1 up to 260°C peak reflow


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    PDF IPB100N06S3L-04 IPI100N06S3L-04, IPP100N06S3L-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 SP0001-02219 3PN06L04 3PN06L04 SMD code d59 TRANSISTOR SMD MARKING CODE 04 IPI100N06S3L-04 d59 smd IPB100N06S3L-04 IPP100N06S3L-04 PG-TO263-3-2

    2n0404

    Abstract: DD 127 D TRANSISTOR TRANSISTOR SMD MARKING CODE 04 TRANSISTOR SMD MARKING CODE 42 IPB80N04S2-04 IPI80N04S2-04 IPP80N04S2-04 PG-TO263-3-2 SP0002-18154
    Text: IPB80N04S2-04 IPP80N04S2-04, IPI80N04S2-04 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.4 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


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    PDF IPB80N04S2-04 IPP80N04S2-04, IPI80N04S2-04 PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 SP0002-18154 2N0404 2n0404 DD 127 D TRANSISTOR TRANSISTOR SMD MARKING CODE 04 TRANSISTOR SMD MARKING CODE 42 IPB80N04S2-04 IPI80N04S2-04 IPP80N04S2-04 PG-TO263-3-2 SP0002-18154

    3PN0604

    Abstract: ANPS071E IPB100N06S3-04 IPI100N06S3-04 IPP100N06S3-04 PG-TO263-3-2
    Text: IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3-04 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 4.1 mΩ ID 100 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified


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    PDF IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3PN0604 IPI100N06S3-04 3PN0604 ANPS071E IPB100N06S3-04 IPI100N06S3-04 IPP100N06S3-04 PG-TO263-3-2

    3PN06L04

    Abstract: IPI100N06S3L-04 SMD code d59 ANPS071E IPB100N06S3L-04 IPP100N06S3L-04 PG-TO263-3-2 3pn06 d59 smd
    Text: IPB100N06S3L-04 IPI100N06S3L-04, IPP100N06S3L-04 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 3.5 mΩ ID 100 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


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    PDF IPB100N06S3L-04 IPI100N06S3L-04, IPP100N06S3L-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3PN06L04 IPI100N06S3L-04 3PN06L04 IPI100N06S3L-04 SMD code d59 ANPS071E IPB100N06S3L-04 IPP100N06S3L-04 PG-TO263-3-2 3pn06 d59 smd

    2n0404

    Abstract: No abstract text available
    Text: IPB80N04S2-04 IPP80N04S2-04, IPI80N04S2-04 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.4 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


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    PDF IPB80N04S2-04 IPP80N04S2-04, IPI80N04S2-04 PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 IPP80N04S2-04 PG-TO263-3-2 2n0404

    3N0404

    Abstract: IPB80N04S3-04 ANPS071E IPI80N04S3-04 IPP80N04S3-04 PG-TO263-3-2 d80 DIODE
    Text: IPB80N04S3-04 IPI80N04S3-04, IPP80N04S3-04 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 3.8 mΩ ID 80 A Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1


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    PDF IPB80N04S3-04 IPI80N04S3-04, IPP80N04S3-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N0404 IPI80N04S3-04 3N0404 IPB80N04S3-04 ANPS071E IPI80N04S3-04 IPP80N04S3-04 PG-TO263-3-2 d80 DIODE

    2n03l04

    Abstract: smd TRANSISTOR code marking 8K 35G100 SPB80N03S2L-04 SPI80N03S2L-04 SPP80N03S2L-04 60E-12 ANPS071E Q67042-S4112 2N03L
    Text: SPI80N03S2L-04 SPP80N03S2L-04,SPB80N03S2L-04 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode RDS on max. SMD version 3.9 mΩ ID 80 A • Logic Level • Excellent Gate Charge x R DS(on) P- TO262 -3-1 P- TO263 -3-2


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    PDF SPI80N03S2L-04 SPP80N03S2L-04 SPB80N03S2L-04 SPP80N03S2L-04 Q67042-S4113 Q67042-S4112 2N03L04 Q67042-S4114 2n03l04 smd TRANSISTOR code marking 8K 35G100 SPB80N03S2L-04 SPI80N03S2L-04 60E-12 ANPS071E Q67042-S4112 2N03L

    4n0404

    Abstract: IPB80N04S4-04 IPP80N04S4-04 IPI80N04S4-04 PG-TO263-3-2 IPB80N04S4
    Text: IPB80N04S4-04 IPI80N04S4-04, IPP80N04S4-04 OptiMOS -T2 Power-Transistor Product Summary Features V DS 40 V R DS on ,max (SMD version) 4.2 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow


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    PDF IPB80N04S4-04 IPI80N04S4-04, IPP80N04S4-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N0404 IPI80N04S4-04 4n0404 IPB80N04S4-04 IPP80N04S4-04 IPI80N04S4-04 PG-TO263-3-2 IPB80N04S4

    PC MOTHERBOARD CIRCUIT diagram

    Abstract: diode c24 06 6D LM386 BLOCK DIAGRAM DESCRIPTION hcm1206 5V power supply using bridge circuit using 7805 2 pin 2.5 3.5 ptt motorola jack diagram LM386 Audio Amplifier computer schematic power supply circuit diagram 4W53 computer motherboard circuit diagram
    Text: Si2493/57/34/15/04 Global ISOmodem-EVB Evaluation Board for the Si2493/57/34/15/04 with a UART Interface Description The global Si2493/57/34/15/04-EVB evaluation board provides the system designer an easy way of evaluating the Si2493/57/34/15/04 ISOmodem . The Si2493/57/


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    PDF Si2493/57/34/15/04 Si2493/57/34/15/04-EVB Si2493/57/ 34/15/04-EVB RS-232 PC MOTHERBOARD CIRCUIT diagram diode c24 06 6D LM386 BLOCK DIAGRAM DESCRIPTION hcm1206 5V power supply using bridge circuit using 7805 2 pin 2.5 3.5 ptt motorola jack diagram LM386 Audio Amplifier computer schematic power supply circuit diagram 4W53 computer motherboard circuit diagram

    4N04L04

    Abstract: DIODE smd marking Ag IPI80N04S4L-04 IPP80N04S4L-04 PG-TO262-3-1 m9120 IPB80N04S4L-04 4N04 SMD DIODE 681
    Text: IPB80N04S4L-04 IPI80N04S4L-04, IPP80N04S4L-04 OptiMOS -T2 Power-Transistor Product Summary Features V DS 40 V R DS on ,max (SMD version) 4.0 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow


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    PDF IPB80N04S4L-04 IPI80N04S4L-04, IPP80N04S4L-04 PG-TO262-3-1 PG-TO263-3-2 PG-TO220-3-1 IPI80N04S4L-04 PG-TO263-3-2 4N04L04 DIODE smd marking Ag IPP80N04S4L-04 m9120 4N04 SMD DIODE 681

    4P04L04

    Abstract: IPP80P04P4L-04 4P04 IPI80P04P4L-04
    Text: IPB80P04P4L-04 IPI80P04P4L-04, IPP80P04P4L-04 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 4.4 mW ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


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    PDF IPB80P04P4L-04 IPI80P04P4L-04, IPP80P04P4L-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI80P04P4L-04 4P04L04 IPP80P04P4L-04 4P04

    Untitled

    Abstract: No abstract text available
    Text: REV. DESCRIPTION A B C D DATE APPROVED 04/05/04 11/04/04 07/12/11 03/13/12 Engineering Release Engineering Update Request for Quotation Dimensioned Bumps M. C. M. C. T. Y. T. Y. 0.20 [5.1mm] 0.22 [5.5mm] 0.035 [0.9mm] —«- r 0.015 [0.4mm] TYP. 0.071 [1.8mm]


    OCR Scan
    PDF 03-NL. BV00-E101.