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    Abstract: No abstract text available
    Text: DP AK BUK6213-30A N-channel TrenchMOS intermediate level FET Rev. 03 — 2 February 2011 Product data sheet 1. Product profile 1.1 General description Intermediate level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


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    PDF BUK6213-30A

    03NK60

    Abstract: BUK6213-30A
    Text: DP AK BUK6213-30A N-channel TrenchMOS intermediate level FET Rev. 03 — 2 February 2011 Product data sheet 1. Product profile 1.1 General description Intermediate level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original
    PDF BUK6213-30A 03NK60 BUK6213-30A

    03NK60

    Abstract: BUK6213-30A
    Text: BUK6213-30A TrenchMOS Intermediate level FET Rev. 02 — 22 September 2003 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips General Purpose Automotive GPA TrenchMOS™ technology.


    Original
    PDF BUK6213-30A M3D300 OT428 03NK60 BUK6213-30A

    03NK60

    Abstract: No abstract text available
    Text: BUK6213-30A TrenchMOS logic level FET Rev. 01 — 25 August 2003 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips General Purpose Automotive GPA TrenchMOS™ technology.


    Original
    PDF BUK6213-30A M3D300 BUK6213-30A OT428 03NK60