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    aec 7446 datasheet

    Abstract: BUK7606-75B BUK75 aec 7446
    Text: D2 PA K BUK7606-75B N-channel TrenchMOS standard level FET Rev. 03 — 3 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


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    BUK7606-75B aec 7446 datasheet BUK7606-75B BUK75 aec 7446 PDF

    03ng89

    Abstract: aec 7446 datasheet BUK75 BUK7506-75B
    Text: TO -22 0A B BUK7506-75B N-channel TrenchMOS standard level FET Rev. 03 — 9 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original
    BUK7506-75B 03ng89 aec 7446 datasheet BUK75 BUK7506-75B PDF

    Untitled

    Abstract: No abstract text available
    Text: TO -22 0A B BUK7506-75B N-channel TrenchMOS standard level FET Rev. 03 — 9 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original
    BUK7506-75B PDF

    7606-75B

    Abstract: diode 7446
    Text: BUK75/7606-75B TrenchMOS standard level FET Rev. 02 — 20 September 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.


    Original
    BUK75/7606-75B BUK7506-75B O-220AB) BUK7606-75B OT404 7606-75B diode 7446 PDF

    Untitled

    Abstract: No abstract text available
    Text: D2 PA K BUK7606-75B N-channel TrenchMOS standard level FET Rev. 03 — 3 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original
    BUK7606-75B PDF

    Untitled

    Abstract: No abstract text available
    Text: BUK75/7606-75B TrenchMOS standard level FET Rev. 01 — 5 April 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using generation three TrenchMOS™ technology, featuring very low on-state resistance.


    Original
    BUK75/7606-75B BUK7506-75B O-220AB) BUK7606-75B OT404 PDF