Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am29F400AT/Am29F400AB 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements
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Am29F400AT/Am29F400AB
8-Bit/262
16-Bit)
44-pin
48-pin
0E5752Ã
Am29F400T/Am29F400B
18612B.
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AM2BF010
Abstract: 28F010 TRANSISTOR TZ am28f010-150 P5752 11559F-12 11559F-2 am28f010-200
Text: FINAL a A m 2 8 F 0 1 0 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V — 90 ns maximum access time ■ CMOS Low power consumption
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Am28F010
32-Pin
AM2BF010
28F010
TRANSISTOR TZ
am28f010-150
P5752
11559F-12
11559F-2
am28f010-200
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Am26F010
Abstract: am26f AM28F010
Text: a Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • H igh p e rfo rm a n ce ■ — 90 ns maximum access time ■ CMOS Lo w p o w e r c o n s u m p tio n ■ ■ — No data retention power consumption
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OCR Scan
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Am28F010
32-Pin
0257S2Ã
D033TÃ
Am26F010
am26f
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programming AM29F400
Abstract: TSOP 48 Package am29f400 AM29F400T AM29F400 Am29f400 equivalent AM29 FLASH OES752 29f400b AM29F400TB
Text: P R E L IM IN A R Y Am29F400T/Am29F400B 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase ■ ■ — Minimizes system level power requirements
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OCR Scan
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PDF
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Am29F400T/Am29F400B
8-Bit/262
16-Bit)
44-pin
48-pin
D257S2Ã
003S5bb
programming AM29F400
TSOP 48 Package am29f400
AM29F400T
AM29F400
Am29f400 equivalent
AM29 FLASH
OES752
29f400b
AM29F400TB
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pid u 13t
Abstract: No abstract text available
Text: AD V MICRO {MEMORY]- 0 e! 0257528 ADV MICRO A m DEj D2S7S2Ö DOESbHM MEMORY 89D 9 9 C 1 6 4 /A m 7 j~ 25634 D r T -4 6 -2 3 -1 0 9 9 C L 1 6 4 A m 9 @ C 1 6 5 /A m 9 9 C L 1 6 5 1 6 ,3 8 4 x 4 Static R /W Randoiïi-Access Memory PRELIMINARY > > 33 D ISTINCTIVE CHARACTERISTICS
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OCR Scan
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Am99C165
22-pin
300-lnch
Am99C164
AIS-WCP-10M-7/87-0
pid u 13t
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data programmers DIP PLCC
Abstract: AMD 478 socket pinout
Text: ADV MICRO MEMORY BÖE •.G2S?SSfl QGETÖBQ S ■ A M » 4 a Advanced Micro Devices Am28F010 131,072 x 8-Bit CMOS Flash Memoty DISTINCTIVE CHARACTERISTICS ■ High performance - 9 0 ns maximum access time ■ Latch-up protected to 100 mA from -1 V to Vcc+1 V
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Am28F010
-32-P
32-Pin
02S752fl
data programmers DIP PLCC
AMD 478 socket pinout
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am27c128
Abstract: No abstract text available
Text: ADV MICRO IME MEMORY D I f - q A m 2 7 C 1 2 k Ö2S7S2Ö - 1 3 GGa?3t,a - tF i Advanced Micro Devices 8 16,384 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS Fast access time — 55 ns Low power consumption: - 100 ¡iA maximum standby current Programming voltage: 12.5 V
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T-Hk-13
Am27C128
128K-bit,
002737t,
T-46-13-29
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DG33 transistor
Abstract: No abstract text available
Text: A m 2 8 F 5 1 2 A 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ Embedded Erase Electrical Bulk Chip-Erase H igh p e rfo rm a n ce — 70 ns maximum access time
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32-Pin
Am28F512A
DG33 transistor
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Untitled
Abstract: No abstract text available
Text: a Advanced Micro Devices Am27X256 256 Kilobit 32,768 x 8-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS • As an OTP EPROM alternative: — Factory optimized programming — Fully tested and guaranteed ■ As a Mask ROM alternative: — Shorter leadtime
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Am27X256
Am33C93A
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Untitled
Abstract: No abstract text available
Text: PRELIM INARY n Advanced Micro Devices AmCOOIAFLKA 1 Megabyte Flash Memory PC Card DISTINCTIVE CHARACTERISTICS • High performance - 250 ns maximum access time ■ CMOS low power consumption - 25 mA typical active current X8 - 400 nA typical standby current
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OCR Scan
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68-pin
10mand
7120A-21
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KS000010
Abstract: No abstract text available
Text: ADV M C R O {MEtlORYJ f i l S e 025 75 2Ö OÜ2Sfa54 2 | ~ Am99C641 / Am99CL641 65,536x1 Static Read/Write Random-Access Memory 0257528 ADV M IC R O M E M O R Y ) 89D 25654 ü T - Ÿ ê 'Z l - o s > 3 DISTINCTIVE CHARACTERISTICS <o <0 • • • • High-performance CMOS circuit design and process
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2Sfa54
Am99C641
Am99CL641
536x1
22-pin
OP002570
OP002580
002Sb71
CLR022*
KS000010
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Untitled
Abstract: No abstract text available
Text: ADV MICRO M EM O R Y 3ÔE Q • 0257S2Ö DDS^Sbö 7 ■ T - 4 4 - IV 2 9 Am27C1024 AMD4 d Advanced Micro Devices 1 Megabit (65,536 x 16-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ High Speed Flashrlte programming ■ Fast access time — 100 ns ■
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0257S2Ö
Am27C1024
16-Bit)
40-pin
T-46-13-29
D2S752fl
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