Untitled
Abstract: No abstract text available
Text: TSDF02830YL Vishay Semiconductors Dual - MOSMIC - two AGC Amplifiers for TV-Tuner Prestage with 5 V Supply Voltage Comments 6 5 4 MOSMIC - MOS Monolithic Integrated Circuit VY Features CW • Easy Gate 1 switch-off with PNP switching transistors inside PLL
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Original
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TSDF02830YL
OT-363L
D-74025
02-May-05
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PDF
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VESD12-02V
Abstract: VESD01-02V VESDxx-02V VESD03-02V VESD05-02V VESD08-02V
Text: VESDxx-02V Vishay Semiconductors Single ESD Protection Diode in SOD-523 Features • • • • • • Small SOD-523 package Low leakage current e3 ESD protection to IEC 61000-4-2 15 kV air ESD protection to IEC 61000-4-2 8 kV (contact) Lead (Pb)-free component
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Original
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VESDxx-02V
OD-523
OD-523
2002/95/EC
2002/96/EC
D-74025
02-May-05
VESD12-02V
VESD01-02V
VESDxx-02V
VESD03-02V
VESD05-02V
VESD08-02V
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PDF
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TSDF1205
Abstract: TSDF1205R TSDF1205RW TSDF1205W
Text: TSDF1205 / 1205R / 1205W / 1205RW Vishay Semiconductors 12 GHz Silicon NPN Planar RF Transistor 2 1 SOT-143 Features • • • • • Low power applications Very low noise figure e3 High transition frequency fT = 12 GHz Lead Pb -free component Component in accordance to RoHS 2002/95/EC
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Original
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TSDF1205
1205R
1205RW
OT-143
2002/95/EC
2002/96/EC
OT-143R
OT-343
OT-343R
TSDF1205
TSDF1205R
TSDF1205RW
TSDF1205W
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PDF
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TSDF2005W
Abstract: No abstract text available
Text: TSDF2005W Vishay Semiconductors 25 GHz Silicon NPN Planar RF Transistor Features • • • • • • • 1 Very low noise figure Very high power gain e3 High transition frequency fT = 25 GHz Low feedback capacitance Emitter pins are thermal leads Lead Pb -free component
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Original
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TSDF2005W
2002/95/EC
2002/96/EC
08-Apr-05
TSDF2005W
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PDF
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TSDF1920W
Abstract: No abstract text available
Text: TSDF1920W Vishay Semiconductors 25 GHz Silicon NPN Planar RF Transistor Features • • • • • • • 1 Very low noise figure Very high power gain e3 High transition frequency fT = 24 GHz Low feedback capacitance Emitter pins are thermal leads Lead Pb -free component
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Original
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TSDF1920W
2002/95/EC
2002/96/EC
OT-343ed
08-Apr-05
TSDF1920W
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PDF
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Untitled
Abstract: No abstract text available
Text: S594TX/S594TXR/S594TXRW Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage 2 1 Comments SOT-143 MOSMIC - MOS Monolithic Integrated Circuit 3 Features • Integrated gate protection diodes • Low noise figure e3 • High gain, medium forward transadmittance 24 mS typ.
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Original
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S594TX/S594TXR/S594TXRW
OT-143
2002/95/EC
2002/96/EC
OT-143R
OT-343R
08-Apr-05
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PDF
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Untitled
Abstract: No abstract text available
Text: S593TX/S593TXR/S593TXRW Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage 2 1 Comments SOT-143 MOSMIC - MOS Monolithic Integrated Circuit 3 Features • Integrated gate protection diodes • Low noise figure e3 • High gain, very high forward transadmittance 40 mS typ.
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Original
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S593TX/S593TXR/S593TXRW
OT-143
2002/95/EC
2002/96/EC
OT-143R
OT-343R
D-74025
02-May-05
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PDF
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Untitled
Abstract: No abstract text available
Text: TSDF72830YS Vishay Semiconductors Dual - MOSMIC - two AGC Amplifiers for TV-Tuner Prestage with Integrated Band Switch for One-Line Switching Comments 6 5 4 MOSMIC - MOS Monolithic Integrated Circuit VY Description CW The Dual-MOSMIC® TSDF72830YS, assembled in
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Original
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TSDF72830YS
TSDF72830YS,
OT-363
08-Apr-05
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PDF
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Untitled
Abstract: No abstract text available
Text: SiC734CD9 Vishay Siliconix Fast Switching MOSFETs With Integrated Driver FEATURES PRODUCT SUMMARY Input Voltage Range 3.3 to 24 V Output Voltage Range 0.5 to 6 V Operating Frequency 100 kHz to 1 MHz Continuous Output Current • Low-side MOSFET control pin for pre-bias start-up
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Original
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SiC734CD9
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: TSDF2005W Vishay Semiconductors 25 GHz Silicon NPN Planar RF Transistor Features • • • • • • • 1 Very low noise figure Very high power gain e3 High transition frequency fT = 25 GHz Low feedback capacitance Emitter pins are thermal leads Lead Pb -free component
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Original
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TSDF2005W
2002/95/EC
2002/96/EC
OT-343R
D-74025
02-May-05
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PDF
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smd sot-363 rf amplifier
Abstract: wc4 marking smd RF low noise sot-363
Text: TSDF54040X/TSDF54040XR Vishay Semiconductors Dual - MOSMIC - two AGC Amplifiers for TV-Tuner Prestage with 5 V Supply Voltage Comments 6 MOSMIC - MOS Monolithic Integrated Circuit TY Features • • • • • • • • • • CW Two AGC amplifiers in a single package
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Original
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TSDF54040X/TSDF54040XR
2002/95/EC
2002/96/EC
TSDF54040X
TSDF54040XR
D-74025
02-May-05
smd sot-363 rf amplifier
wc4 marking
smd RF low noise sot-363
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PDF
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Untitled
Abstract: No abstract text available
Text: TSDF53030 Vishay Semiconductors Dual - MOSMIC - two AGC Amplifiers for TV-Tuner Prestage with 5 V Supply Voltage Comments 6 5 4 MOSMIC - MOS Monolithic Integrated Circuit VY CW Features • • • • Two AGC amplifiers in a single package Integrated gate protection diodes
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Original
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TSDF53030
2002/95/EC
2002/96/EC
OT-363
D-74025
02-May-05
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PDF
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smd sot-363 rf amplifier
Abstract: No abstract text available
Text: TSDF03030X/TSDF03030XR Vishay Semiconductors Dual - MOSMIC - two AGC Amplifiers for TV-Tuner Prestage with 5 V Supply Voltage Comments 6 MOSMIC - MOS Monolithic Integrated Circuit TY Features CW • Two AGC amplifiers in a single package • Easy Gate 1 switch-off with PNP switching
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Original
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TSDF03030X/TSDF03030XR
2002/95/EC
2002/96/EC
TSDF03030X
TSDF03030XR
D-74025
02-May-05
smd sot-363 rf amplifier
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PDF
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TSDF02830YR
Abstract: No abstract text available
Text: TSDF02830YR Vishay Semiconductors Dual - MOSMIC - two AGC Amplifiers for TV-Tuner Prestage with 5 V Supply Voltage Comments 6 5 4 MOSMIC - MOS Monolithic Integrated Circuit VY Features CW • Easy Gate 1 switch-off with PNP switching transistors inside PLL
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Original
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TSDF02830YR
D-74025
02-May-05
TSDF02830YR
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PDF
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sot-363 Marking G1
Abstract: TSDF03030X TSDF03030XR
Text: TSDF03030X/TSDF03030XR Vishay Semiconductors Dual - MOSMIC - two AGC Amplifiers for TV-Tuner Prestage with 5 V Supply Voltage Comments 6 MOSMIC - MOS Monolithic Integrated Circuit TY Features CW • Two AGC amplifiers in a single package • Easy Gate 1 switch-off with PNP switching
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Original
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TSDF03030X/TSDF03030XR
2002/95/EC
2002/96/EC
08-Apr-05
sot-363 Marking G1
TSDF03030X
TSDF03030XR
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PDF
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smd sot-363 rf amplifier
Abstract: TSDF54040X TSDF54040XR
Text: TSDF54040X/TSDF54040XR Vishay Semiconductors Dual - MOSMIC - two AGC Amplifiers for TV-Tuner Prestage with 5 V Supply Voltage Comments 6 MOSMIC - MOS Monolithic Integrated Circuit TY Features • • • • • • • • • • CW Two AGC amplifiers in a single package
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Original
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TSDF54040X/TSDF54040XR
2002/95/EC
2002/96/EC
08-Apr-05
smd sot-363 rf amplifier
TSDF54040X
TSDF54040XR
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PDF
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8517
Abstract: TSDF52830YS
Text: TSDF52830YS Vishay Semiconductors Dual - MOSMIC - two AGC Amplifiers for TV-Tuner Prestage with Integrated Band Switch for One-Line Switching Comments 6 5 4 MOSMIC - MOS Monolithic Integrated Circuit VY CW Description The Dual-MOSMIC® TSDF52830YS, assembled in
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Original
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TSDF52830YS
TSDF52830YS,
OT-363
08-Apr-05
8517
TSDF52830YS
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PDF
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TSDF52424
Abstract: No abstract text available
Text: TSDF52424 Vishay Semiconductors Dual - MOSMIC - two AGC Amplifiers for TV-Tuner Prestage with 5 V Supply Voltage Comments 6 5 4 MOSMIC - MOS Monolithic Integrated Circuit VY CW Features • • • • Two AGC amplifiers in a single package Integrated gate protection diodes
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Original
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TSDF52424
2002/95/EC
2002/96/EC
08-Apr-05
TSDF52424
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PDF
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TSDF02830YL
Abstract: marking WM3
Text: TSDF02830YL Vishay Semiconductors Dual - MOSMIC - two AGC Amplifiers for TV-Tuner Prestage with 5 V Supply Voltage Comments 6 5 4 MOSMIC - MOS Monolithic Integrated Circuit VY Features CW • Easy Gate 1 switch-off with PNP switching transistors inside PLL
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Original
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TSDF02830YL
OT-363L
08-Apr-05
TSDF02830YL
marking WM3
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PDF
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TSDF04040XR
Abstract: TSDF04040X
Text: TSDF04040X/TSDF04040XR Vishay Semiconductors Dual - MOSMIC - two AGC Amplifiers for TV-Tuner Prestage with 5 V Supply Voltage Comments 6 MOSMIC - MOS Monolithic Integrated Circuit TY Features CW • Two AGC amplifiers in a single package • Easy Gate 1 switch-off with PNP switching
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Original
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TSDF04040X/TSDF04040XR
2002/95/EC
2002/96/EC
08-Apr-05
TSDF04040XR
TSDF04040X
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PDF
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TSDF2020W
Abstract: No abstract text available
Text: TSDF2020W Vishay Semiconductors 25 GHz Silicon NPN Planar RF Transistor Features • • • • • • • 1 Very low noise figure Very high power gain e3 High transition frequency fT = 25 GHz Low feedback capacitance Emitter pins are thermal leads Lead Pb -free component
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Original
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TSDF2020W
2002/95/EC
2002/96/EC
OT-343ed
08-Apr-05
TSDF2020W
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PDF
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SOT-490
Abstract: TSDF1220F
Text: TSDF1220F Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to more than 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a
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Original
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TSDF1220F
OT-490
08-Apr-05
SOT-490
TSDF1220F
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PDF
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Untitled
Abstract: No abstract text available
Text: 2 THIS DRAWI NG IS UNPUBLISHED. C O P Y R I G H T 20 R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S C O R P O R A T I O N . A L L 20 LOC 00 ES R 1G H T S R E S E RV E D. A OPTIONAL CENTER MOD U L E , WI T H 0 . 1 5 0 R E V 1S I O N S
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OCR Scan
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03SEP2009
24AUG2009
04SEP2009
I00779Â
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PDF
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Untitled
Abstract: No abstract text available
Text: 2 THIS DRAWI NG IS UNPUBLISHED. C O P Y R I G H T 20 R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S C O R P O R A T I O N . A L L 20 LOC 00 GP R 1G H T S R E S E RV E D. R E V 1S I O N S DIST P LTR DESCRIPTION D2 D3 D4 D5 A "AMP",
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OCR Scan
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1IFEB2009
17FEB2009
31MAR2009
02MAY05
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PDF
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