Untitled
Abstract: No abstract text available
Text: ADV MICRO M E M O R Y b4E J> D2S7S2Ô m 0031^21 T3T Advanced Micro Devices Am27C128 128 Kilobit (16,384 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS Latch-up protected to 100 mA from -1 V to Vcc +1 V • Fast access time — 45 ns High noise immunity
|
OCR Scan
|
PDF
|
Am27C128
28-pin
32-pin
KS000010
11420C-9
|
Untitled
Abstract: No abstract text available
Text: ADV MICRO M E M O R Y 4ÛE D 025752Û DD3DSÛ3 ö T—46—13-25 Am27X512 Advanced Micro Devices 65,536 x 8-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS • ■ ■ As an OTP EPROM alternative: - Factory optimized programming - Fully tested and guaranteed
|
OCR Scan
|
PDF
|
Am27X512
KS000010
0205-005A
|
Untitled
Abstract: No abstract text available
Text: bME D ADV MICRO MEMORY WM 02S7S2Ö DÜ35177 bl5 • A M D 4 Am27X010 1 Megabit (131,072 x 8-Bit) CMOS ExpressROM Device ■ As an OTP EPROM alternative: — Factory optimized programming — Fully tested and guaranteed ■ As a Mask ROM alternative: — Shorter leadtime
|
OCR Scan
|
PDF
|
02S7S2Ã
Am27X010
KS000010
|
Untitled
Abstract: No abstract text available
Text: ADV MICRO b4E MEMORY D • 02S7SEÖ 00321SÖ 7bD ■ Advanced Micro Devices Am27X256 256 Kilobit (32,768 x 8-Bit) CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS ■ As an OTP EPROM alternative: — Factory optimized programming — Fully tested and guaranteed
|
OCR Scan
|
PDF
|
02S7SEÃ
00321SÃ
Am27X256
G257S2Ã
GD321b7
KS000010
|
D0304
Abstract: T-46
Text: ADV MI CRO MEMORY 4ÖE 02S7S2Ö J> 003D4S3 h • AMD4 T - 46-13-29 Advanced Micro Devices A m 2 7 C 1 0 2 4 1 Megabit (65,536 x 16-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ High Speed Flashrite programming ■ Fast access tim e — 100 ns ■ Low power consumption:
|
OCR Scan
|
PDF
|
02S7S2Ã
003D4S3
T-46-13-29
Am27C1024
16-Bit)
40-pin
0D304L
06780-009E
D0304
T-46
|
Untitled
Abstract: No abstract text available
Text: ADV M IC RO A m MEMORY IME d | 0ES75SÔ Q027S45 7 £ 1 Advanced Micro Devices 2 1 4 7 / A m 21 L 4 7 4096x1 Static RAM DISTINCTIVE C H A RA CTERISTICS • High speed — access times down to 35 ns maximum • Automatic power-down when deselected • Low power dissipation
|
OCR Scan
|
PDF
|
0ES75SÃ
Q027S45
4096x1
Am2147/Am21L47
OP000220
OP000440
OP000430
C3P000760
OP000240
OP000230
|
AM29F040A
Abstract: 17113D-4 AMD date code 29f040 Am29F040
Text: a Am29F040 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-oniy, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ ■ ■ ■ ■ — Minimizes system level power requirements Compatible with JEDEC-standards
|
OCR Scan
|
PDF
|
Am29F040
32-pin
0257S2fl
0033bH3
AM29F040A
17113D-4
AMD date code 29f040
|
Untitled
Abstract: No abstract text available
Text: a PRELIMINARY Advanced Micro Devices AmC004AFLKA 4 Megabyte Flash Memory PC Card DISTINCTIVE CHARACTERISTICS • High performance - 250 ns maximum access time ■ CMOS low power consumption - 25 mA typical active current X8 - 400 nA typical standby current
|
OCR Scan
|
PDF
|
AmC004AFLKA
68-pin
G033354
1888888888888888I
7274A-21
0257S2Ã
|
am28F020
Abstract: 28F020
Text: ADV MI CRO MEMORY 4ÖE D Advance Inform ation m 0 2 S7 SEÖ OÜ3 D7 4b T • AMD4 T-46-13-27 Advanced Micro Devices Am28F020 262,144 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS ■ ■ ■ High performance - 90 ns maximum access time CMOS Low power consumption
|
OCR Scan
|
PDF
|
0D3D74b
Am28F020
32-Pin
-32-pin
T-46-13-27
Am28F020-95C4JC
Am28F020-95C3JC
28F020
|
AM27CO10
Abstract: AM27C010-120DC AM27C010 gg2mt
Text: ADV MICRO MEMORY 14E 0 1 Q5S?5Eâ 0Ü27M07 t | Advanced Micro Devices Am27C010 1 Megabit 131,072 x 8-Bit CMO,S EPROM DISTINCTIVE CHARACTERISTICS Compact 32-pin DIP package requires no hardware change for upgrades to 8 megabits Easy upgrade from 28-pin JEDEC EPROMs
|
OCR Scan
|
PDF
|
Am27C010
0G274Q7
28-pln
32-pin
T-46-13-29
0205A-006A
AM27CO10
AM27C010-120DC
gg2mt
|
am28c256
Abstract: No abstract text available
Text: ADV M IC R O ÍM E H O R Y } l b De | [1 2 5 7 5 2 6 Am28C256 0G2fe.fe.2fl i 27 32K x 8 Electrically Erasable PROM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS • • • 5-V only operation Military temperature range available Low-power CMOS - 60 mA active current
|
OCR Scan
|
PDF
|
Am28C256
64-byte
|
amd socket 940 pinout
Abstract: SSC 9500 KSS 8006 AM27C020 electra 171 AMD 27C020 BXA 4250 27C020 "electronica"
Text: FINAL H Advanced Micro Devices Am27C020 2 Megabit 262,144 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — 70 ns ■ Low power consumption — Typical programming time of 32 seconds ■ Latch-up protected to 100 mA from -1 V to
|
OCR Scan
|
PDF
|
Am27C020
28-pin
32-pin
8M-7/94-0
11507E
amd socket 940 pinout
SSC 9500
KSS 8006
electra 171
AMD 27C020
BXA 4250
27C020
"electronica"
|
DG33 transistor
Abstract: No abstract text available
Text: A m 2 8 F 5 1 2 A 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ Embedded Erase Electrical Bulk Chip-Erase H igh p e rfo rm a n ce — 70 ns maximum access time
|
OCR Scan
|
PDF
|
32-Pin
Am28F512A
DG33 transistor
|
Untitled
Abstract: No abstract text available
Text: Am28F256 256 Kilobit 32,768 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance Latch-up protected to 100 mA from -1 V to Vcc +1 V — 70 ns maximum access time Flasherase Electrical Bulk Chip-Erase
|
OCR Scan
|
PDF
|
Am28F256
32-pin
Am28F256-75
025752fl
DD32b01
|
|
|
AM27C64
Abstract: DG3032 AM27C64-90DC
Text: ADV MICRO MEMORY MAE D • 0257550 0030312 T ■ AflDM Advanced Micro Devices Am27C64 8,192 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ ■ Fast access tlme-55 ns Low power consumption: -100 jiA maximum standby current ■ JEDEC-approved pinout ■
|
OCR Scan
|
PDF
|
Am27C64
tlme-55
64K-bjt,
DG3032b
T-46-13-29
DG3032
AM27C64-90DC
|
AMD am3 socket pinout
Abstract: amd am3 pin out AM28F512
Text: ADV MI CR O MEM OR Y 4fiE D 02S7SEÖ Preliminary DG30bäS 5 « A M D 4 T—46—13—27 Advanced Micro Devices A m 2 8 F 5 1 2 65,536 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS High performance - 90 ns maximum access time • Low power consumption
|
OCR Scan
|
PDF
|
02S7SEÃ
Am28F512
32-pin
T-46-13-27
compatibleD25752Ã
0Q3G714
T-46-13-2
Am28F512-95C4JC
Am28F512-95C3JC
AMD am3 socket pinout
amd am3 pin out
|
AM28F020
Abstract: D0307 28F020 G03G 32ag
Text: ADV MI CRO MEMORY 4ÖE D Advance Inform ation m 0 2 S7 SEÖ OÜ3 D7 4b T • AMD4 T-46-13-27 Advanced Micro Devices Am28F020 262,144 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS ■ ■ ■ High performance - 90 ns maximum access time CMOS Low power consumption
|
OCR Scan
|
PDF
|
0D3D74b
Am28F020
32-Pin
-32-pin
T-46-13-27
Am28F020-95C4JC
Am28F020-95C3JC
D0307
28F020
G03G
32ag
|
Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION * Am29F800T/Am29F800B 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ Embedded Program Algorithms
|
OCR Scan
|
PDF
|
Am29F800T/Am29F800B
8-Bit/524
16-Bit)
44-pin
48-pin
E5752Ã
|
Untitled
Abstract: No abstract text available
Text: ADV NICRO {MEHORY} Tb D eT| 0 2 S 7 52 Ô 002SÖ71 Q J " T - % - l5 : 2 5 Am10P88/Am100P88 65,536-Bit 8 1 9 2 x 8 ECL Bipolar PROM ADVANCE INFORMATION • • Fast Access time (12 ns typ.) — improves system cycle times Power dissipation decreases with Increasing tempera
|
OCR Scan
|
PDF
|
Am10P88/Am100P88
536-Bit
Am10P88
Am100P88
8192-words
|
Untitled
Abstract: No abstract text available
Text: a FINAL Am27C400 Advanced Micro Devices 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit ROM Compatible CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Single +5 V power supply ■ ±10% power supply tolerance standard on most speeds — 100 ns
|
OCR Scan
|
PDF
|
Am27C400
8-Bit/262
16-Bit)
44-pin
42-pin
Am33C93A
|
Untitled
Abstract: No abstract text available
Text: ADV MI CRO ME MORY b4E » GSS7SSÛ DD3SÜSD ÖS1 • AMD4 il Am27C400 Advanced Micro Devices 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) ROM Compatible CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Fast access tim e Single +5 V pow er sup ply — 100 ns ■ Low pow er consum ption
|
OCR Scan
|
PDF
|
Am27C400
8-Bit/262
16-Bit)
44-pin
42-pin
0032D31
KS000010
|
Untitled
Abstract: No abstract text available
Text: — B M M B B B iw n n iim v i w i r w m w M t æ ^ i — -^-“ *i71iiHrcnfnORY> It 0257528 003585? I - S H b - 13 Ami OP14/Am1 OOP14/Am1 OKP14 4,096-Bit 1 0 2 4 x 4 ECL Bipolar PROM ADVANCE INFORM ATIO N • Fast Access tim e (8 ns typ.) — im proves system cycle
|
OCR Scan
|
PDF
|
i71iiHrcnfnORY>
OP14/Am1
OOP14/Am1
OKP14
096-Bit
Am10P14
10KP14,
Am100P14
1024-words
|