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    LL4150

    Abstract: No abstract text available
    Text: LL4150 Vishay Telefunken Silicon Epitaxial Planar Diodes Features D Low forward voltage drop D High forward current capability Applications 94 9371 High speed switch and general purpose use in computer and industrial applications Absolute Maximum Ratings Tj = 25_C


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    LL4150 D-74025 01-Apr-99 LL4150 PDF

    1N4683 data

    Abstract: Telefunken tk 19 1N4678 1N4679 1N4680 1N4681 1N4682 1N4683 1N4684 1N4685
    Text: 1N4678.1N4717 Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D Zener voltage specified at 50 mA Maximum delta VZ given from 10 mA to 100 mA Very high stability Low noise Applications 94 9367 Voltage stabilization Absolute Maximum Ratings


    Original
    1N4678. 1N4717 D-74025 01-Apr-99 1N4683 data Telefunken tk 19 1N4678 1N4679 1N4680 1N4681 1N4682 1N4683 1N4684 1N4685 PDF

    s 8550 d

    Abstract: telefunken ra 100 SCT23
    Text: DZ23C2V7-DZ23C51 Vishay Telefunken 300 mW Dual Surface Mount Zener Diodes Features • SO T-23 surface mount package • 300 mW power dissipation rating • Ideally suited for automatic insertion • AVz for both diodes in one case is < 5% • Common anode style available see AZ series


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    DZ23C2V7-DZ23C51 01-Apr-99 FaxBa35 01-Apr-99 SCT-23 s 8550 d telefunken ra 100 SCT23 PDF

    SOD JEDEC

    Abstract: No abstract text available
    Text: BAS85 Vishay Telefunken Schottky Barrier Diode Features • Integrated protection ring against static discharge • Very low forward voltage Applications Applications where a very low forward voltage is required Absolute Maximum Ratings T, = 25°C Parameter


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    BAS85 50mmx50mmx1 01-Apr-99 BAS85_ -April-99 SOD JEDEC PDF

    Untitled

    Abstract: No abstract text available
    Text: _BAS86 Vishay Telefunken Schottky Barrier Diode Features • Integrated protection ring against static discharge • Very low forward voltage ¿y Applications Applications where a very low forward voltage is required Absolute Maximum Ratings Tj = 25°C


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    BAS86 50mmx50mmx1 01-Apr-99 PDF

    bc815

    Abstract: BC815-25 9600 baud rate converter
    Text: TOIM3232 Vishay Telefunken Integrated Interface Circuits MEMBER IrDA FSn ULC Technology: High-performance gate array package using dual metal layer CMOS technology, featuring sub-micron channel length 0.8 (xm Description The TOIM3232 1C provides proper pulse shaping for


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    OIM3232 OIM3232 4000-series 4000-series RS232 TN0201T -Apr-99 bc815 BC815-25 9600 baud rate converter PDF

    IR5H

    Abstract: diode ir01
    Text: MCL4154 Vishay Telefunken Silicon Epitaxial Planar Diode Features • Electrical data identical with the device 1N4154 • Micro Melf package Applications Extreme fast switches Absolute Maximum Ratings Tj = 25°C Parameter Repetitive peak reverse voltage Reverse voltage


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    MCL4154 1N4154 01-Apr-99 IR5H diode ir01 PDF

    Untitled

    Abstract: No abstract text available
    Text: BZM55C. v is h a y Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • Saving space • Hermetic sealed parts • • Fits onto SOD 323 / SOT 23 footprints Electrical data identical with the devices BZT55C./TZMC. Very sharp reverse characteristic


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    BZM55C. BZT55C. 300K/W e970-5600 01-Apr-99 PDF

    Untitled

    Abstract: No abstract text available
    Text: TZM5221 B.TZM5267B Vishay Telefunken Silicon Z-Diodes Features • Very sharp reverse characteristic • Very high stability • Electrical data identical 1N5221 B.1 N5267B • Low reverse current level • Vz-tolerance ± 5% with the \ devices Applications


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    TZM5221 TZM5267B 1N5221 N5267B 50mmx50mmx1 01-Apr-99 PDF

    Untitled

    Abstract: No abstract text available
    Text: LL4151_ Vishay Telefun ken Silicon Epitaxial Planar Diodes Features • Electrical data identical with the device 1N4151 Applications Extreme fast switches Absolute Maximum Ratings Tj = 25°C Parameter Repetitive peak reverse voltage Reverse voltage


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    LL4151_ 1N4151 50mmx50mmx1 01-Apr-99 PDF

    Untitled

    Abstract: No abstract text available
    Text: _ BB804 Vishay Telefunken Silicon Epitaxial Planar Dual Capacitance Diode Features • Common cathode Applications Tuning of separate resonant circuits, push-pull circuits in FM range, especially for car radios Absolute Maximum Ratings


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    BB804 100MHz 01-Apr-99 OT-23 PDF

    BA979

    Abstract: No abstract text available
    Text: BA979.BA979S VISHAV Vishay Telefunken Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators Absolute Maximum Ratings Tj = 25°C Parameter Reverse voltage Forward current


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    BA979 BA979S 50mmx50mmx1 01-Apr-99 PDF

    Untitled

    Abstract: No abstract text available
    Text: BAQ333.BAQ 335 Vishay Telefun ken Silicon Planar Diodes Features • Saving space • Hermetic sealed parts • Fits onto SO D 323 / S O T 23 footprints • Electrical data identical with the BAQ33.BAQ35 / BAQ133.BAQ135 • Very low reverse current devices


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    BAQ333. BAQ33. BAQ35 BAQ133. BAQ135 BAQ333 BAQ334 BAQ335 01-Apr-99 PDF

    1009C

    Abstract: No abstract text available
    Text: BA679.BA679S Vishay Telefun ken Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled attenuators HF resistance in adjustable Absolute Maximum Ratings Tj = 25°C Parameter Reverse voltage Forward current Junction temperature


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    BA679 BA679S 50mmx50mmx1 1009c 01-Apr-99 1009C PDF

    telefunken ta 350

    Abstract: vishay AX
    Text: 1N4154 Vishay Telefunken Silicon Epitaxial Planar Diode Applications Extreme fast switches Absolute Maximum Ratings Tj = 25°C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current


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    1N4154 85524e 01-Apr-99 telefunken ta 350 vishay AX PDF

    Untitled

    Abstract: No abstract text available
    Text: TZMB._ Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • y Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise • Vz-tolerance ± 2%


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    50mmx50mmx1 01-Apr-99 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N4150_ Vishay Telefun ken Silicon Epitaxial Planar Diode Features • Low forward voltage drop • High forward current capability Applications High speed switch and general purpose use in computer and industrial applications Absolute Maximum Ratings


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    1N4150_ 01-Apr-99 PDF

    Untitled

    Abstract: No abstract text available
    Text: TZS4678.TZS4717 Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • Zener voltage specified at 50 • Maximum delta Vz given from 10 ¡xA to 100 iA • Very high stability • Low noise Applications Voltage stabilization Absolute Maximum Ratings


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    TZS4678. TZS4717 300K/W 50mmx50mmx1 100mA Number85613 -Apr-99 01-Apr-99 PDF

    Untitled

    Abstract: No abstract text available
    Text: LS4151_ VISHAY Vishay Telefunken Silicon Epitaxial Planar Diode Features • Electrical data identical with the device 1N4151 • Quadra Melf package Applications Extreme fast switches Absolute Maximum Ratings T¡ = 25°C Parameter Repetitive peak reverse voltage


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    LS4151_ 1N4151 01-Apr-99 PDF

    FZIT

    Abstract: No abstract text available
    Text: TZQ5221 B.TZQ5267B Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise Applications Voltage stabilization


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    TZQ5221 TZQ5267B --300K/W 50mmx50mmx1 01-Apr-99 FZIT PDF

    TZX18B

    Abstract: TZX 16 C
    Text: TZX._ Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Very high stability • Low noise • Available with tighter tolerances Applications Voltage stabilization


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    200mz 01-Apr-99 TZX18B TZX 16 C PDF

    Untitled

    Abstract: No abstract text available
    Text: LL4150_ VISHAY Vishay Telefunken Silicon Epitaxial Planar Diodes Features • Low forward voltage drop • High forward current capability Applications High speed switch and general purpose use in computer and industrial applications Absolute Maximum Ratings


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    LL4150_ 01-Apr LL4150 01-Apr-99 PDF

    BZX85

    Abstract: No abstract text available
    Text: _BZX85CVishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • Sharp edge in reverse characteristics • Low reverse current • Low noise • Very high stability • Available with tighter tolerances Applications


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    BZX85CVishay 200mA BZX85B. 01-Apr-99 BZX85C. BZX85 PDF

    diode ep sod-323

    Abstract: 1N4148 SOD-323 A
    Text: MCL4148.MCL4448 Vishay Telefunken Silicon Epitaxial Planar Diodes Features • Saving space • Herm etic sealed parts • Fits onto SOD 323 / SOT 23 footprints • Electrical data identical with the devices 1N4148 and 1N4448 respectively • M icro Melf package


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    MCL4148 MCL4448 1N4148 1N4448 Res448 01-Apr-99 diode ep sod-323 1N4148 SOD-323 A PDF