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    SiB488DK

    Abstract: No abstract text available
    Text: SPICE Device Model SiB488DK Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    SiB488DK 18-Jul-08 PDF

    Si7143DP

    Abstract: 26 258
    Text: SPICE Device Model Si7143DP Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    Si7143DP 18-Jul-08 26 258 PDF

    Untitled

    Abstract: No abstract text available
    Text: CCPD-023 5x7mm SMD LVPECL Clock Oscillator CCPD-023 Model 5×7 mm SMD, 2.5V, LVPECL Model CCPD-023 is a 77.760MHz to 161.000MHz LVPECL Clock Oscillator operating at 2.5Volts. The oscillator utilizes a High Q Third Overtone crystal design providing very low


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    CCPD-023 760MHz 000MHz 01-Feb-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: CCPD-024 5x7mm SMD LVPECL Clock Oscillator CCPD-024 Model 5×7 mm SMD, 2.5V, LVPECL Model CCPD-024 is a 162.000MHz to 312.500MHz LVPECL Clock Oscillator operating at 2.5Volts. The oscillator utilizes a High Q Third Overtone crystal design providing very low


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    CCPD-024 000MHz 500MHz 01-Feb-10 PDF

    p0603

    Abstract: P1505 sfernice Vishay Sfernice 250R ,vishay 0805 SMD resistors 0.050 RESISTOR 10R 0.1 P2512 EIA-96 P0302
    Text: P Vishay Sfernice High Precision Wraparound - Wide Ohmic Value Range Thin Film Chip Resistors FEATURES For low noise and precision applications, superior stability, low temperature coefficient of resistance, and low voltage coefficient, Vishay Sfernice’s proven precision


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    MIL-PRF-55342G 18-Jul-08 p0603 P1505 sfernice Vishay Sfernice 250R ,vishay 0805 SMD resistors 0.050 RESISTOR 10R 0.1 P2512 EIA-96 P0302 PDF

    Untitled

    Abstract: No abstract text available
    Text: CCPD-033 5x7mm SMD LVPECL Clock Oscillator CCPD-033 Model 5×7 mm SMD, 3.3V, LVPECL Model CCPD-033 is a 77.760MHz to 161.000MHz LVPECL Clock Oscillator operating at 3.3Volts. The oscillator utilizes a High Q Third Overtone crystal design providing very low


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    CCPD-033 760MHz 000MHz 01-Feb-10 PDF

    20221

    Abstract: CECC00802
    Text: VLMB40L1M2-34 Vishay Semiconductors Low Current SMD LED PLCC-2 FEATURES • High efficient InGaN technology • EIA and ICE standard package • Compatible with IR reflow, vapor phase and wave solder processes acc. to CECC 00802 and J-STD-020 • Available in 8 mm tape reel


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    VLMB40L1M2-34 J-STD-020 2002/95/EC 2002/96/EC JESD22-A114-B AEC-Q101 VLMB40. 18-Jul-08 20221 CECC00802 PDF

    si2300

    Abstract: Si2300DS S10-0258
    Text: SPICE Device Model Si2300DS Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    Si2300DS 18-Jul-08 si2300 S10-0258 PDF

    smps tig welding

    Abstract: transistor 342 G GA200SA60SP
    Text: GA200SA60SP Vishay High Power Products Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)


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    GA200SA60SP OT-227 2002/95/EC 18-Jul-08 smps tig welding transistor 342 G GA200SA60SP PDF

    Untitled

    Abstract: No abstract text available
    Text: CCPD-034 5x7mm SMD LVPECL Clock Oscillator CCPD-034 Model 5×7 mm SMD, 3.3V, LVPECL Model CCPD-034 is a 162.000MHz to 312.500MHz LVPECL Clock Oscillator operating at 3.3Volts. The oscillator utilizes a High Q Third Overtone crystal design providing very low


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    CCPD-034 000MHz 500MHz 01-Feb-10 PDF

    smd transistor REC marking

    Abstract: No abstract text available
    Text: HFA06TB120SPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 6 A FEATURES • • • • • • Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Meets MSL level 1, per J-STD-020, LF maximum


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    HFA06TB120SPbF J-STD-020, 2002/95/EC AEC-Q101 18-Jul-08 smd transistor REC marking PDF

    Untitled

    Abstract: No abstract text available
    Text: VLMB40L1M2-34 Vishay Semiconductors Low Current SMD LED PLCC-2 FEATURES • High efficient InGaN technology • EIA and ICE standard package • Compatible with IR reflow, vapor phase and wave solder processes acc. to CECC 00802 and J-STD-020 • Available in 8 mm tape reel


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    VLMB40L1M2-34 J-STD-020 2002/95/EC 2002/96/EC JESD22-A114-B AEC-Q101 VLMB40. 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiA406DJ Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    SiA406DJ 18-Jul-08 PDF

    VPR221T

    Abstract: VPR220 VPR220S VPR220Z VPR221 VPR221Z
    Text: VPR220, VPR221 Vishay Foil Resistors Bulk Metal Foil Technology Precision Foil Power Resistors in TO-220 Configuration with TCR of ± 2 ppm/°C, Tolerance of to ± 0.01 % and Power Rating to 8 W FEATURES Any value at any tolerance within resistance range


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    VPR220, VPR221 O-220 VPR220 VPR221, VPR221 VPR220 18-Jul-08 VPR221T VPR220S VPR220Z VPR221Z PDF

    RESISTANCE RS71Y

    Abstract: rb 57 sfernice
    Text: V I S H AY I N T E R T E C H N O L O GY, I N C . INTERACTIVE data book THICK FILM, METAL FILM AND WIREWOUND TECHNOLOGIES VISHAY SFERNICE VSE-DB0098-1002 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


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    VSE-DB0098-1002 RESISTANCE RS71Y rb 57 sfernice PDF

    siA975

    Abstract: SIA975DJ DSA00206566
    Text: SPICE Device Model SiA975DJ Vishay Siliconix Dual P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    SiA975DJ 18-Jul-08 siA975 DSA00206566 PDF

    Untitled

    Abstract: No abstract text available
    Text: VLMB40L1M2-34 Vishay Semiconductors Low Current SMD LED PLCC-2 FEATURES • High efficient InGaN technology • EIA and ICE standard package • Compatible with IR reflow, vapor phase and wave solder processes acc. to CECC 00802 and J-STD-020 • Available in 8 mm tape reel


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    VLMB40L1M2-34 J-STD-020 2002/95/EC 2002/96/EC JESD22-A114-B AEC-Q101 VLMB40. 2011/65/EU 2002/95/EC. PDF

    ov 2094

    Abstract: ov 2094/41 d 1698
    Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOG J ALL RIGHTS RESERVED. D IST R E V IS IO N S £2 LTR DESCRIPTION R E V IS E D F1 A 3. -0 8 -0 0 5 7 8 1 ^?©[1S£N0.2¿: APVD J.S S.M 05M AR’08 01FEB10


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    ECO-10-000444 01FEB10 175151--X 175152--X 31MAR2000 ov 2094 ov 2094/41 d 1698 PDF

    DIN 3966

    Abstract: DIN 16901 ISO 3966 539660-1 DIN-46228 PART 4 5000AW HO-25 DIN ISO 2768 iso2768 DIN-46228 spec
    Text: 4 3 T H I S D R A W IN G i impi ipi - V I R T R A U L I C I i r U N V h U u h i T b Ñ i LI LI I I L ¿ . L I U I N UNU CO PY R IG H T BY TYCO RELEASED POR PU B LIC A T IO N FREI F U E R V E R O E FF E N T LIC H U N G ELEC T R O N IC S C RO SS ORD ER D NO.


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    DIN 16901 140

    Abstract: No abstract text available
    Text: DIESES ZEICHNUNG5D0KUMENT WIRD DURCH TE INCORPORATED KONTROLLIERT. AENDERUNGEN, DIE DEN TECHNISCHEN FORTSCHRITT DIENEN, SIND VORBEHALTEN. DEN JEWEILS LETZTGUELTIGEN AENDERUNGSSTAND ERFAHREN S IE AUF ANFRAGE. rar — m rn n rm r PASSEND ZU. PROJEKT NR. i E


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