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    2SA594

    Abstract: c0b35pf 2SC594 70M40
    Text: TOSHIBA í D I S C R E T E / O P T O } 909725 0 T OS HI BA ~SÍ DISCRETE/ OPT O 00G7427 Ql h 21 5òC 0 'f-3/-'Î-3 SILICON NPN EPITAXIA L TYPE (PCT PROCESS) Unit- in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS. 0 9 ,3 9 MAX. VIDEO AMPLIFIER APPLICATIONS. 0 8 .4 5 MAX


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    PDF 00G7427 200MHz 100mA, 2SA594. lllllllllllllllll1l11lllllllllllllllll1ll 2SA594 c0b35pf 2SC594 70M40