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    00G4B Search Results

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    00G4B Price and Stock

    Vishay Intertechnologies G24071936200G4B000

    Resistor High Power Wirewound 620 Ohm 2% 7W ?100ppm/?C to ?180ppm/?C Conformal PC Pin T/R - Ammo Pack (Alt: G24071936200G4B000)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas G24071936200G4B000 Ammo Pack 8 Weeks 500
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    • 1000 $0.78613
    • 10000 $0.61494
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    Mouser Electronics G24071936200G4B000
    • 1 $2.13
    • 10 $1.89
    • 100 $1.45
    • 1000 $0.892
    • 10000 $0.864
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    Avnet Abacus G24071936200G4B000 11 Weeks 500
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    Vishay Intertechnologies G24071931800G4B000

    G204 180R 2% AB G73 - Ammo Pack (Alt: G24071931800G4B000)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas G24071931800G4B000 Ammo Pack 8 Weeks 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.78613
    • 10000 $0.61494
    Buy Now
    Mouser Electronics G24071931800G4B000
    • 1 $2.13
    • 10 $1.89
    • 100 $1.45
    • 1000 $0.892
    • 10000 $0.864
    Get Quote
    Newark G24071931800G4B000 Bulk 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.04
    • 10000 $0.932
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    Vishay Intertechnologies G24071931000G4B000

    Resistor High Power Wirewound 100 Ohm 2% 7W ?100ppm/?C to ?180ppm/?C Conformal PC Pin T/R - Ammo Pack (Alt: G24071931000G4B000)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas G24071931000G4B000 Ammo Pack 8 Weeks 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.78613
    • 10000 $0.61494
    Buy Now
    Mouser Electronics G24071931000G4B000
    • 1 $2.13
    • 10 $1.89
    • 100 $1.45
    • 1000 $0.892
    • 10000 $0.864
    Get Quote

    00G4B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Transistor BFR 97

    Abstract: Transistor BFR 39 transistor npn d 2058 Transistor BFR 35 Transistor BFR 98 Transistor BFR 38 Transistor BFR 80 Transistor BFR 91 K 2056 transistor Transistor BFR 79
    Text: 2SC D • fl23SbOS Q0QMb74 T H S I E G NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers and High-Speed Switching Applications BFR 35 A BFR 35 AR 0 '7 Z3 I - / S 2 N 6619 SIEMENS AKTIENGESELLSCHAF ’4 BFR 35 A is an epitaxial NPN silicon planar RF transistor in TO 2 3 6 plastic package


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    fl23SbOS Q0QMb74 2N6619, 023SbOS 00G4b77 BFR35A 2N6619 Transistor BFR 97 Transistor BFR 39 transistor npn d 2058 Transistor BFR 35 Transistor BFR 98 Transistor BFR 38 Transistor BFR 80 Transistor BFR 91 K 2056 transistor Transistor BFR 79 PDF

    MD15and

    Abstract: SU16
    Text: FUJITSU M I C R O E L E C T R O N I C S °il F U J IT S U D e | 3 7 ^ 7 1 ^ QOD4t.7S 3 | 16 BIT ERROR «CHECKING & CORRECTION T-^ S-i7 -MB1426 I _ 1 A p ril, 1986 E d itio n 1.0 DESCRIPTION The MB1426 Error Checking and Correction ECC device is designed to


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    -------------------MB1426 MB1426 16-bit 64-pin 37417t 00G4b T-45-17 64-Lead PGA-64C-A01) MD15and SU16 PDF

    Untitled

    Abstract: No abstract text available
    Text: 80C26 SEEQ CMOS Ethernet Interface Adapter in 28L Package T e c h n o lo g y , In c o rp o ra te d October 1994 PRELIMINARY SEEQ AutoDUPLEX Designation Sym bol indentifies product as AutoD UPLEX device • Provides Au to D U P L E X Detect Function for Full


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    80C26 80C25 MD400143/- 80C26 D400143/- PDF

    ECG1188

    Abstract: C2 ph zener diode tl74 ECG1186
    Text: PH I L I P S E C G INC 17E • fi bhSBTSfi 0 G 0 4 b 4 G 7 T-7 4 -0 5 -0 1 ECG ECG1186 Video IF Amp and Keyed AGC Sem iconductors Features • Power gain — 46 dB typ f =58 MHz) • Wide AGC Range — 60 dB min • Control signal available fo r delayed


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    ECG1186 ECG1186 ECG1188 C2 ph zener diode tl74 PDF

    BEL 100N TRANSISTOR PIN DIAGRAM

    Abstract: AMD 586 embedded BEL 100N TRANSISTOR 111S3 BEL 100N EPE6047S 80C25 80C26 PT4152 transistor 5bt
    Text: 80C26 SEEQ CMOS EtflBfflGt T e c h n o lo g y , In c o r p o r a te d Interface Adapter in 28L Package P R E LIM IN A R Y O ctober 1994 SEEQ AutoDUPLEX Designation S y m b o l » id e n tifie s p ro d u c t a s A u to D U P L E X d e v ic e • P rovides A u to D U P L E X TU D etect F u nction fo r F u ll


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    80C26 10Base-T 10Base-5, 10Base-2, B0C25 ofAUI/10Base-T MD400143/- 00D4bM0 BEL 100N TRANSISTOR PIN DIAGRAM AMD 586 embedded BEL 100N TRANSISTOR 111S3 BEL 100N EPE6047S 80C25 80C26 PT4152 transistor 5bt PDF

    2322 730 61 resistor

    Abstract: b20413
    Text: Product Specification Philips Components Resistor Chip Size 0805 5% FEATURES Reduced size of final equipment 9C08052A.J 2322 7 3 0 QUICK REFERENCE DATA Resistance Range 1£2 to 10 M£2; E24 Series and Jumper (0 fl) Lower assembly costs Higher component and equipment


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    E24/E96 G04121 00G4b23 2322 730 61 resistor b20413 PDF

    2764 EEPROM

    Abstract: EEPROM 2864 2864 EEPROM 28 PINS 2864 EEPROM 2764 eprom PINOUT
    Text: DS1225DÆ DALLAS SEMICONDUCTOR CORP SOE D PA LLAS GGOMbSb PIN ASSIGNMENT FEATURES • Data retention in the absence of Vcc NC i h • Data is automatically protected during power loss x A12 I 2 A7 1 3 8 volatile static RAM or A6 A5 • Unlimited write cycles


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    DS1225D/E 28-pin T-46-23-37 2bl413D 00G4bb3 DS1225D/E 010TNA 2764 EEPROM EEPROM 2864 2864 EEPROM 28 PINS 2864 EEPROM 2764 eprom PINOUT PDF

    Untitled

    Abstract: No abstract text available
    Text: Lattice' ispLSI' and pLSI' 2128 ; ¡¡ ; Semiconductor • ■ ■ Corporation High-Density Programmable Logic Features Functional Block Diagram • HIGH DENSITY PROGRAMMABLE LOGIC — — — — — 6000 PLD Gates 128 I/O Pins, Eight Dedicated inputs 128 Registers


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    0212-80Bisp/2128 160-Pin 176-Pin 28-80L PDF

    Untitled

    Abstract: No abstract text available
    Text: PHILIPS E C G INC ECG Semiconductors 17E c CMOS Frequency Divider and Amp I XT C 2 XTC 3 ° I2 C 4 VDDC 5 Qll C 6 °IO C 7 °8 C 8 GNO C 9 A bso lu te M axim um Ratings Ta =25°C C haracteristic Sym bol Rating U n it Supply Voltage VpD 10 Input Voltage V|N


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    00D4bb3 ECG1197 ECG1197 00D4bbS PDF

    Untitled

    Abstract: No abstract text available
    Text: FU JI 2SK2641-01 N-channel MOS-FET FAP-IIS Series 500V > Features - 0,9Q 10A 100W Outline Drawing TO-3P High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated 4.5 > Applications


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    2SK2641-01 0004bb3 PDF

    S24L2

    Abstract: No abstract text available
    Text: SME D SONY A3fl23fl3 GG04b47 TDfc. « S O N Y - '3 CXK58257ATM/AYM -70LL/85LL/10LL/12LL 70L/85L/10L/12L 32768-word x 8-bit High Speed CMOS Static RAM S O NY CORP/COMPONENT PRODS Description C X K 5 8 2 5 7 A T M /A Y M is a 256K toits, 32,768 w o rds by 8 bits, CMOS static RAM.


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    0D04b47 CXK58257ATM/AYM -70LL/85LL/1 OLL/12LL 32768-word CXK58257ATM/AYM CXK58257ATM CXK58257AYM CXK5825Ta S24L2 PDF

    SED1560TQA

    Abstract: K15 crystal liquid 73501 PA rf SED1560 series H6187 LI 1806 E 151 R mpu-28
    Text: SED1560/1/2 Technical Manual Preliminary S-MOS Systems, Inc. October, 1996 Version 3.0 (Prelim inary) S-MOS Systems, Inc. • 150 River Oaks Parkway • San Jose, CA 95134 »Tel: (408) 922-0200 • Fax: (408) 922-0238 • 7^3210^ OOÜMbDS Ô54 ■ THIS PAGE INTENTIONALLY BLANK


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    SED1560/1/2 SED1560 SED1560TQA K15 crystal liquid 73501 PA rf SED1560 series H6187 LI 1806 E 151 R mpu-28 PDF

    ECG1212

    Abstract: No abstract text available
    Text: T h iT iP S E C G INC Ù 17E • fabSaiSfl OOOMbTl 5 T -7 4 -Û 5 -Û 1 ECG1212 AUDIO POWER AM PLIFIER Sem ico nd u cto rs ECG1212 is a hybrid Integrated circuit designed for usa m a ! channel audio power amplifier. If Has 9 .5 W minimum output with an 8 ohm lood at a supply voltage


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    ECG1212 T-74-Ã ECG1212 bb53TEfl ecg12i2 PDF

    Untitled

    Abstract: No abstract text available
    Text: im X28HC64 64K 8K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION * 55ns Access Time * Simple Byte and Page Write —Single 5V Supply —No External High Voltages or Vpp Control Circuits —Self-Timed — No Erase Before Write —No Complex Programming Algorithms


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    X28HC64 0Q04b03 PDF