b712 smd
Abstract: schematic diagram inverter 2000w IC25N040 MT702 CT712 MHN2200AT R888 SMB diode tp2256 Tp2350 c840 dell
Text: SENS P10 Owner : Kevin,Lee Signature : HK,Park Robin,Cho APPROVAL TAURUS MAIN BOARD BA41-10013A PBA:BA92-01563A, SMT:BA92-00563B MP 1.0 - 0321 MARCH,21,2001 CHECK : : : : : : DRAW Model Name PBA Name PCB Code Dev. Step Revision T.R. Date CPU : P-IV Northwood
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Original
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SFD-P10K
SCD-P10K24
SDD-P10K8
SRW-P10K8
SFD-P10E
SCD-P10E24
SDD-P10E8
SRW-P10E8
2200mA,
iEEE1394,
b712 smd
schematic diagram inverter 2000w
IC25N040
MT702
CT712
MHN2200AT
R888 SMB diode
tp2256
Tp2350
c840 dell
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PDF
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Untitled
Abstract: No abstract text available
Text: ADV HI CRO TELECCINI 13E 0 £o2S?5S? Am7968/Am7969 00ak35<t 3 | ' T - l S ~37-e5 TAXIchip Integrated Circuits (Transparent Asynchronous Xmitter - Receiver interface PRELIMINARY • Drive coaxial cable directly or Interface with fiber optic data links • 32-100 Mbps (4-12.5 Mbytes/sec data throughput
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OCR Scan
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Am7968/Am7969
37-e5
28-pin
BDOO7201
Am7968
Am7969
AM7968-125
AM7969-125
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PDF
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Untitled
Abstract: No abstract text available
Text: 00AK CMOS D R A M ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time(-5, -6,
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OCR Scan
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KM44V16100AK
16Mx4
16Mx4,
512Kx8)
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PDF
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Untitled
Abstract: No abstract text available
Text: KM44V16000AS CMOS D R AM ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cyde 4K Ref. or 8K Ref. , access time(-5, -6,
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OCR Scan
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KM44V16000AS
16Mx4
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PDF
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ICE ICC3
Abstract: 44v16100
Text: KM44V16000A, KM44V16100A CMOS DRAM 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 16,777,216 x 4 bit Fast Page Mode CM OS DRAM s. Fast Page M ode offers high speed random access of m em ory cells within the sam e row. Refresh cycle 4K Ref. or 8K Ref. , access tim e(-5, -6,
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OCR Scan
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KM44V16000A,
KM44V16100A
ICE ICC3
44v16100
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PDF
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Untitled
Abstract: No abstract text available
Text: KM4 4 V 16 0 0 0 AK C MOS DRAM ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cyde 4K Ref. or 8K Ref. , access time(-5, -6,
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OCR Scan
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16Mx4
16Mx4,
512Kx8)
KM44V16000AK
0G34B34
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PDF
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Untitled
Abstract: No abstract text available
Text: KM44V16100AS CMOS D R A M ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cyde 4K Ref. or 8K Ref. , access time(-5, -6,
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OCR Scan
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KM44V16100AS
16Mx4
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PDF
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KM48c8100A
Abstract: No abstract text available
Text: KM48C8000A, KM48C8100A CMOS DRAM 8M x 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cucye 4K Ref. or 8K Ref. , access time(-5, -6,
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OCR Scan
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KM48C8000A,
KM48C8100A
KM48c8100A
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PDF
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KM48c8100A
Abstract: No abstract text available
Text: KM48C8000A, KM48C8100A CMOS DRAM 8M x 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cucye 4K Ref. or 8K Ref. , access time(-5, -6,
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OCR Scan
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KM48C8000A,
KM48C8100A
KM48C8000A
KM48C8100A
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PDF
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M5916
Abstract: 533410 M5402 KMM591000CN-7 KMM5334100
Text: 1. INTRODUCTION Dynamic RAM Module 14M Based } ; - ilM x 8 "11Mx9 1KMM581000CÑ-6 HKMM58100ÒCN-7 IKMM581000CN-8 j • KMM591000CN-6 : ¡]KMM591000CN-7~ ~~~ffKMM591000CN-8 [4Mx8 J - ]4Mx9 .KMM584Q0ÒC-5 jjKM M584Q00C-6 ] KMM584000C-7 _ |K M M 584000C-8 - 1KMM594000C-5
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OCR Scan
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11Mx9
KMM581000C
KMM584Q0
KMM594000C-5
HKMM58100
KMM591000CN-7
M584Q00C-6
jKMM59400QC-6
KMM533100
KMM5361000C2/C2G
M5916
533410
M5402
KMM591000CN-7
KMM5334100
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PDF
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KM44C16100A
Abstract: No abstract text available
Text: KM44C16000A, KM44C16100A CMOS DRAM 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time(-5, -6,
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OCR Scan
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KM44C16000A,
KM44C16100A
16Mx4
QG533b5
KM44C16100A
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PDF
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KM44V16100A
Abstract: KM44V16000A
Text: KM44V16000A, KM44V16100A CMOS DRAM 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 16,777,216 x 4 bit Fast Page M ode CM OS DRAM s. Fast Page M ode offers high speed random access of m em ory cells w ithin the same row. Refresh cycle 4K Ref. or 8K Ref. , access tim e(-5, -6,
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OCR Scan
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KM44V16000A,
KM44V16100A
16Mx4
cibm42
KM44V16100A
KM44V16000A
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PDF
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Untitled
Abstract: No abstract text available
Text: KM48V8000A, KM48V8100A CMOS DRAM 8M x 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 8,388,608 x 8 bit Fast Page Mode CM O S DRAMs. Fast Page M ode offers high speed random access of m em ory cells w ithin the sam e row. Refresh cycle 4K Ref. o r 8K Ref. , access tim e(-5, -6,
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OCR Scan
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KM48V8000A,
KM48V8100A
13For
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs DRAM MODULE MH4M9B0DJA-6,-7,-8 FAST PAGE MODE 37748736-BIT(4194304-WORD BY 9-BIT)DYNAMIC RAM DESCRIPTION The MH4M9B0DJA is 41 94304-w ord x 9 -b it dynamic RAM and consists of nine industry standard 4M x 1 dynamic RAMs in SOJ. The mounting of SOJ on a single in-line package provides
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OCR Scan
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37748736-BIT
4194304-WORD
94304-w
37748736-BIT
Hfl25
Q02ti3fl2
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PDF
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KM44C4000A
Abstract: km44c4100a km44v4100a
Text: KM44C4000A, KM44C4100A KM44V4000A, KM44V4100A CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh
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OCR Scan
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KM44C4000A,
KM44C4100A
KM44V4000A,
KM44V4100A
KM44C4000A
km44c4100a
km44v4100a
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PDF
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KM48V8000A
Abstract: No abstract text available
Text: KM48V8000A, KM48V8100A CMOS DRAM 8M x 8 Bit CM O S Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time(-5, -6,
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OCR Scan
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KM48V8000A,
KM48V8100A
13For
KM48V8000A
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PDF
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Untitled
Abstract: No abstract text available
Text: KM44V16000A, KM44V16100A CMOS DRAM 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time(-5, -6,
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OCR Scan
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KM44V16000A,
KM44V16100A
16Mx4
2334T
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PDF
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Untitled
Abstract: No abstract text available
Text: KM44C4000A, KM44C4100A KM44V4000A, KM44V4100A CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh
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OCR Scan
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KM44C4000A,
KM44C4100A
KM44V4000A,
KM44V4100A
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PDF
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Untitled
Abstract: No abstract text available
Text: KM48V8000A, KM48V8100A CMOS DRAM 8M x 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION T his is a fam ily of 8,388,608 x 8 bit Fast Page M ode CM O S DRAMs. Fast Page M ode offers high speed random access of m em ory cells w ithin the sam e row. Refresh cycle 4K Ref. or 8K Ref. , access tim e(-5 -6
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OCR Scan
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KM48V8000A,
KM48V8100A
13For
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PDF
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mps3904
Abstract: MPS3903 MPS3904 transistor To92 transistor
Text: MOTOROLA SC 1EE D XSTRS/R F I ti3ti7aSM Symbol Rating Unit Value VCEO - 40 Vdc Collector-Base Voltage VcBO 60 ' Vdc Emitter-Base Voltage Vebo 6.0 Vdc Collector Current — Continuous ic 100 mAdc Total Device Dissipation @ T a = 25°C Derate above 25°C Pd
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OCR Scan
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MPS3903
MPS3904
O-226AA)
mps3904
MPS3904 transistor
To92 transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: 00AK3 DRAM Module ELECTRONICS 00AK3/AS3, KMM372V3280AK3/AS3 Fast Page Mode 32Mx72 DRAM DIMM with ECC, 3.3V Preliminary GENERAL DESCRIPTION FEATURES The Samsung KMM372V320 8 0A is a 32M bit x 72 • Part Identification Dynamic RAM high density memory module. The
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OCR Scan
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KMM372V3200AK3
KMM372V3200AK3/AS3,
KMM372V3280AK3/AS3
32Mx72
KMM372V320
16Mx4bit
400mil
48pin
168-pin
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PDF
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