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    rfp12n10

    Abstract: No abstract text available
    Text: HARRIS SEHICOND SECTOR böE D • 4302271 00S11G0 777 ■ HAFRFR1S UU PCF12N10W P^jF12N1 OEJ S E M I C O N D U C T O R N-Channel MOS Chip January 1993 Die Features • HAS Passivated W • Contact Metallization - Gate and Source - Aluminum • Drain - Tri-Metal Al-Ti-Ni


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    PDF 00S11G0 PCF12N10W jF12N1 Mil-Std-750, IRF120 IRF520 IRFR120 IRFF120 RFM12N10 RFP12N10 rfp12n10