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    Abstract: No abstract text available
    Text: bOE 1 • S23SbQS 004b51b 734 » S I E G SIEMENS LD 261 ARRAYS LD 262—269/260 SINGLE DIODE SIEMENS AKTIENGESELLSCHAF INFRARED EMITTER DIODES Package Dimensions in Inches mm 106 (2 7) 098 (2 5 ) 1 * » 138(3 5 ) 118(3 0 ) _ L Maximum Ratings


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    RX1214B150W

    Abstract: No abstract text available
    Text: T ^ 3 3 - lè RX1214B150W PHILIPS INTERNATIONAL SbE D Bi 7110fl2b DDHbSlE 1T2 « P H I N — M IC R O W A V E P O W E R T R A N S IS T O R NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power am plifier, operating in the 1.2 to 1.4 G H z frequency range.


    OCR Scan     		PDF RX1214B150W 7110fl2b 711002b 7Z242Ã RX1214B150W