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BUK456 Abstract: C055 T0220AB 7ts transistor Text: N AflER P H I L I P S / D I S C R E T E b^E D • hbS3=J31 003Qb6S DST » A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	003Qb6S BUK456-200A/B T0220AB BUK456 -200A -200B C055 7ts transistor	PDF

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Abstract: C055 T0220AB 7ts transistor
Text: N AflER P H I L I P S / D I S C R E T E b^E D • hbS3=J31 003Qb6S DST » A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

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003Qb6S BUK456-200A/B T0220AB BUK456 -200A -200B C055 7ts transistor

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