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    Text: bRE D N AMER PH ILIP S /D IS C R E TE • bb53R31 00304bQ Rlfl ■ P hilips Sem ico nd uctors Pro d uct Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		bb53R31 00304bQ BUK436-100A/B BUK436 -100A -100B 0Q304b4 PDF