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    Abstract: No abstract text available
    Text: P-CHANNEL POWER MOSFETS SSD2108 FEATURES 8SOIC • L o w e r R ds <on • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF SSD2108 002T473 to150â