Untitled
Abstract: No abstract text available
Text: Datasheet R8C/38T-A Group RENESAS MCU 1. R01DS0081EJ0100 Rev.1.00 Dec 09, 2011 Overview 1.1 Features The R8C/38T-A Group of single-chip microcontrollers MCUs incorporates the R8C CPU core, which provides sophisticated instructions for a high level of efficiency. With 1 Mbyte of address space, the CPU core is capable of
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R8C/38T-A
R01DS0081EJ0100
R8C/38TA
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R5F21368snfp
Abstract: 06B2D 0025DH 00285H
Text: Datasheet R8C/36T-A Group RENESAS MCU 1. R01DS0055EJ0100 Rev.1.00 Dec 09, 2011 Overview 1.1 Features The R8C/36T-A Group of single-chip microcontrollers MCUs incorporates the R8C CPU core, which provides sophisticated instructions for a high level of efficiency. With 1 Mbyte of address space, the CPU core is capable of
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R8C/36T-A
R01DS0055EJ0100
R8C/36TA
R5F21368snfp
06B2D
0025DH
00285H
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06B2D
Abstract: 0029E 000E8H 002C1H 0028b 0027AH 0025DH 00285H 06B13
Text: Preliminary Datasheet Specifications in this document are tentative and subject to change. R8C/38T-A Group RENESAS MCU 1. R01DS0081EJ0001 Rev.0.01 Feb 23, 2011 Overview 1.1 Features The R8C/38T-A Group single-chip microcontrollers MCUs incorporate the R8C CPU core, which provides
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R8C/38T-A
R01DS0081EJ0001
R8C/38TA
06B2D
0029E
000E8H
002C1H
0028b
0027AH
0025DH
00285H
06B13
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06B2D
Abstract: p9530 0023AH 0025DH 00285H
Text: Datasheet R8C/38T-A Group RENESAS MCU 1. R01DS0081EJ0100 Rev.1.00 Dec 09, 2011 Overview 1.1 Features The R8C/38T-A Group of single-chip microcontrollers MCUs incorporates the R8C CPU core, which provides sophisticated instructions for a high level of efficiency. With 1 Mbyte of address space, the CPU core is capable of
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R8C/38T-A
R01DS0081EJ0100
R8C/38TA
06B2D
p9530
0023AH
0025DH
00285H
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R5F21368snfp
Abstract: R5F21368 r5f2136csnfp 0025DH 00285H
Text: Preliminary Datasheet Specifications in this document are tentative and subject to change. R8C/36T-A Group RENESAS MCU 1. R01DS0055EJ0001 Rev.0.01 Jan 28, 2011 Overview 1.1 Features The R8C/36T-A Group single-chip microcontrollers MCUs incorporate the R8C CPU core, which provides
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R8C/36T-A
R01DS0055EJ0001
R8C/36TA
R5F21368snfp
R5F21368
r5f2136csnfp
0025DH
00285H
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Untitled
Abstract: No abstract text available
Text: • bhSB'lBl 002b40b 407 « A P X N AUER PHILIPS/DISCRETE B B 212 b^E D A.M. VARIABLE CAPACITANCE DOUBLE DIODES The BB212 is a double 9V variable capacitance diode w ith common cathode in a plastic TO-92 variant. A special feature is the low tuning voltage which makes the device particularly suited to car and
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002b40b
BB212
002b4QA
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'lE ]> • bbS3^31 002b453 223 « A P X Philips Product specification BBY62 Double variable capacitance diode DESCRIPTION The BBY62 is a double variable capacitance diode in a
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002b453
BBY62
BBY62
D02b45b
DQ2b457
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Untitled
Abstract: No abstract text available
Text: BUS-MATCHING BIDIRECTIONAL FIFO 512 x 1 8 -B IT -1024 x 9-BIT 1024 x 18-BIT - 2048 x 9-BIT Integrated D evice Technology, Inc. IDT72510 IDT72520 FEATURES: DESCRIPTION: • Two side-by-side FIFO memory arrays for bidirectional data transfers • 512 x 18-Bit - 1024 x 9-Bit IDT72510
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18-BIT
IDT72510
IDT72520
IDT72510)
IDT72520)
18-to-9-bit,
36-to-9-bit,
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Untitled
Abstract: No abstract text available
Text: HM51441OB/BL Series 1,048,576-word x 4-bit Dynamic RAM The Hitachi H M 51441 OB/BL is a CMOS dynamic R A M o rg a n iz e d 1,0 4 8 ,5 7 6 -w o rd x 4 -b it. H M 5 1441 OB/BL h as re a liz e d h ig h e r d en sity , h ig h e r p e rfo rm a n c e and v a rio u s fu n c tio n s by
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HM51441OB/BL
576-word
20pin
20-pin
HM514410BS/BLS-7
HM51441OBS/BLS-8
300-mil
20-pin
CP-20D)
HM514410BHM514410B/BL
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Untitled
Abstract: No abstract text available
Text: 17313bS DDEbMMÔ S3R OPA655 BU RR - BROW N Wideband FET-lnput OPERATIONAL AMPLIFIER FEATURES DESCRIPTION • 400MHz UNITY GAIN BANDWIDTH • LOW INPUT BIAS CURRENT: 5pA The OPA655 combines a very wideband, unity gain stable, voltage feedback op amp with a FET input
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17313bS
OPA655
400MHz
OPA655
1012Q
ZZ182
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Untitled
Abstract: No abstract text available
Text: HM514405C Series Preliminary 1,048,576-word x 4-bit Dynamic Random Access Memory HITACHI The H itachi H M 514405C is a CMOS dynam ic RA M o rg a n iz e d 1 ,0 4 8 ,5 7 6 w ords x 4 b its. HM514405C has realized higher density, higher performance and various functions by employing
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HM514405C
576-word
514405C
HM514405C
300-mil
26-pin
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37608
Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR 37E D 4302271 OGEtMOLT-'ì BIHAS Radiation-Hardened High-Reliability IC s _ CMM5104/1RZ A O - - 2 18 - V DD 1 7 - A6 A Z - 3 16 -A 7 A3 - 4 1 5 -A8 - 5 M AS - 6 13 -A IO OUT - 7 12 - A11
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CMM5104/1RZ
4096-Word
20-ns
37608
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Untitled
Abstract: No abstract text available
Text: PD 9.863A International k ?r Rectifier IRFL9014 HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling V d s s = -6 0 V R DS on = 0 -5 0 Q
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IRFL9014
OT-223
GD2b44cJ
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IRLL110
Abstract: No abstract text available
Text: PD 9.869A International Rectifier IRLL110 HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V gs=4V & 5V Fast Switching VDSS = 100V
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IRLL110
OT-223
SS452
D02b4bb
IRLL110
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FW250
Abstract: No abstract text available
Text: Advance Data Sheet December 1996 m icroelectronics group Lucent Technologies Bell Labs Innovations FC250R1 Power Module: 18 Vdc to 36 Vdc Input; 28 Vdc Single Output; 250 W Features • Size: 61.0 mm 2.40 in. x 116.8 mm (4.60 in.) x 13.5 mm (0.50 in.) ■ Operating case temperature range:
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FC250R1
005002b
005b4bl
00Sb4t
FW250
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pin diagram of 18 pin IC 8203
Abstract: FC250C1
Text: Advance Data Sheet December 1996 m ic ro e le c tr o n ic s group Lucent Technologies Bell Labs Innovations FC250-Series Power Modules: 18 Vdc to 36 Vdc Input; 250 W Features • Size: 61.0 mm 2.40 in. x 116.8 mm (4.60 in.) x 13.5 mm (0.5 in.) ■ Operating case temperature range:
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FC250-Series
outp86
DS95-141EPS
DS94-100EPS)
pin diagram of 18 pin IC 8203
FC250C1
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI < DIGITAL ASSP> M 6 6 2 3 0 P /F P A2RT ADVANCED ASYNCHRONOUS RECEIVER & TRANSM ITTER DESCRIPTION The M 66230P/FP is an integrated circuit for asynchronous PIN CONFIGUP OP VIEW) serial data communications.it is used In combination with an 8-bit micro-processor and is produced using the silicongate C M OS technology.
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66230P/FP
500kbps
16t-is.
0G253bD
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M37700M
Abstract: No abstract text available
Text: MITSUBISHI MICROCOMPUTERS M 37704M 2A XXXFP M37704M2-XXXFP and M37704S1FP are respectively unified into M37704M2AXXXFP and M37704S1AFP. |U |5 Iw iw 7 7 a a 4 S 1 A F P S IN G L E -C H IP 1 6 -B IT CM O S M IC R O C O M P U T E R DESCRIPTION APPLICATION The M37704M2AXXXFP and M37704S1AFP are single-chip
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37704M
M37704M2-XXXFP
M37704S1FP
M37704M2AXXXFP
M37704S1AFP.
M37704S1AFP
80-pin
25mVrms,
M37700M
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PDF
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IRF7102
Abstract: IOR 336 AN-994
Text: International '«»Rectifier PD 9.872A IRF7102 HEXFET Power MOSFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching V DSS= 5 0 V
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IRF7102
554S2
S54S2
IRF7102
IOR 336
AN-994
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KS57C2616
Abstract: LC5012 64 pin IC microcontroller LCD ic 555 timer 10 minute buzzer obo 112 KS57C2516
Text: KS57C261& 4-BIT CMOS Microcontroller ELECTRONICS „ J ^ , Product Specification OVERVIEW The KS57C2616 single-chip CMOS microcontroller is designed for high performance using Samsung's newest 4-bit CPU core. With its up-to-896-dot LCD direct drive capability, flexible 8-bit and 16-bit timer/counters, and
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KS57C261&
KS57C2616
up-to-896-dot
16-bit
100-pin
4D02bH43
71b4142
LC5012
64 pin IC microcontroller LCD
ic 555 timer 10 minute
buzzer obo 112
KS57C2516
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m1-m7
Abstract: No abstract text available
Text: MITSUBISHI LSIs DRAM MODULE o«tUW«N^ V M O «' s» f 3 MH1M72BTJ-6.-7 FAST PAGE MODE 75497472-BIT(1048576-WQRD BY 72-BIT)DYNAMIC RAM DESCRIPTION The MH1M72BTJ is 1048576-word x 72bit dynamic RAM module. This consists of eighteen industry standard 1M x 4
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MH1M72BTJ-6
75497472-BIT
1048576-WQRD
72-BIT
MH1M72BTJ
1048576-word
72bit
MH1M72BTJ-6
MH1M72BTJ-7
75497472-BIT
m1-m7
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36B8
Abstract: No abstract text available
Text: MITSUBISHI LSIs {DRAM MODULE MH2M36BDJ-7,-8/ MH2M36BNDJ-7,-8 FAST PAGE MODE 75497472-BIT 2097152-WORD BY 36-BIT)DYNAMIC RAM DESCRIPTION The M H 2M 36B D J/B N D J is 2 0 9 7 1 5 2 -w o rd x 3 6 -b it dynamic R A M . This consists of eight industry standard
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MH2M36BDJ-7
MH2M36BNDJ-7
75497472-BIT
2097152-WORD
36-BIT
2Q97152-WORD
36-BIT)
MH2M36BDJ
MH2M36BNDJ
MH2M36BTJ
36B8
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Untitled
Abstract: No abstract text available
Text: 6 7 DRAWING MADE THIS IN DRAWING @ THIRD IS ANGLE U N P U B L IS H E D . COPYRIGH T 5 19 RELEASED BY AMP 2 3 4 O PR OJ EC TI ON FOR P U B L I C A T I O N INCORPORATED. ALL LOG ,19 INTERNATIONAL RIGHTS D I 5T AD RESERVED. 47 REV I 5 I 0 N 5 P F ZONE LTR DESCRIPTION
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M514800A
Abstract: m514800
Text: HM514800A/AL Series HM51S4800A/AL Series Preliminary 52 4,28 8-w o rd x 8 -b it D y n a m ic R a n d o m A c ce ss M em ory T he H itach i H M 514800A are C M O S d ynam ic R A M o rg a n iz e d as 5 2 4 ,2 8 8 -w o rd x 8 -b it. HM 514800A have realized higher density, higher
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M514800A/AL
HM51S4800A/AL
288-word
HM514800A
400-mil
28-pin
M514800A
m514800
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