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    0024B Search Results

    0024B Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    840024BGILF Renesas Electronics Corporation FemtoClock® Crystal/LVCMOS-to- LVCMOS/LVTTL Frequency Synthesizer Visit Renesas Electronics Corporation
    840024BGILFT Renesas Electronics Corporation FemtoClock® Crystal/LVCMOS-to- LVCMOS/LVTTL Frequency Synthesizer Visit Renesas Electronics Corporation
    10122238-320024BLF Amphenol Communications Solutions HPCE STRADDLE MOUNT with Enhanced walls 32P24S Visit Amphenol Communications Solutions
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    0024B Price and Stock

    Amphenol Communications Solutions Z002-4B7C1-11000

    CLIP,COPPER ALLOY T0.15,HEIGHT 3
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    DigiKey Z002-4B7C1-11000 Cut Tape 21,951 1
    • 1 $0.15
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    • 100 $0.097
    • 1000 $0.07909
    • 10000 $0.07909
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    Z002-4B7C1-11000 Digi-Reel 21,951 1
    • 1 $0.15
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    • 100 $0.097
    • 1000 $0.07909
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    California Eastern Laboratories (CEL) RAC00024-B

    BULK 2.4GHZ ANTENNA
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    DigiKey RAC00024-B Bulk 200 1
    • 1 $2.14
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    Mouser Electronics RAC00024-B 200
    • 1 $2.5
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    • 100 $1.81
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    Inventus Power FWE050024B-10A

    AC/DC DESKTOP ADAPTER 24V 50W
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    DigiKey FWE050024B-10A Box 124 1
    • 1 $24.13
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    Neutron USA FWE050024B-10A
    • 1 $95.13
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    Inventus Power MWA050024B-10A

    AC/DC DESKTOP ADAPTER 24V 50W
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    DigiKey MWA050024B-10A Bulk 80 1
    • 1 $29.03
    • 10 $27.87
    • 100 $25.8324
    • 1000 $25.21458
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    Inventus Power FWE030024B-10A

    AC/DC DESKTOP ADAPTER 24V 30W
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    DigiKey FWE030024B-10A Bulk 79 1
    • 1 $19.65
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    0024B Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    0024B0311-9 TE Connectivity Raychem Cable Protection Cables, Wires - Coaxial Cables (RF) - COAX CABLE-TWINAXIAL Original PDF
    0024B0311-9-L275 TE Connectivity Raychem Cable Protection Cables, Wires - Coaxial Cables (RF) - COAX CABLE-TWINAXIAL Original PDF
    0024B8424-9 TE Connectivity RAYCHEMSPEHIGHSPEEDDIGITAL FEET Original PDF

    0024B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet R8C/38T-A Group RENESAS MCU 1. R01DS0081EJ0100 Rev.1.00 Dec 09, 2011 Overview 1.1 Features The R8C/38T-A Group of single-chip microcontrollers MCUs incorporates the R8C CPU core, which provides sophisticated instructions for a high level of efficiency. With 1 Mbyte of address space, the CPU core is capable of


    Original
    R8C/38T-A R01DS0081EJ0100 R8C/38TA PDF

    R5F21368snfp

    Abstract: 06B2D 0025DH 00285H
    Text: Datasheet R8C/36T-A Group RENESAS MCU 1. R01DS0055EJ0100 Rev.1.00 Dec 09, 2011 Overview 1.1 Features The R8C/36T-A Group of single-chip microcontrollers MCUs incorporates the R8C CPU core, which provides sophisticated instructions for a high level of efficiency. With 1 Mbyte of address space, the CPU core is capable of


    Original
    R8C/36T-A R01DS0055EJ0100 R8C/36TA R5F21368snfp 06B2D 0025DH 00285H PDF

    06B2D

    Abstract: 0029E 000E8H 002C1H 0028b 0027AH 0025DH 00285H 06B13
    Text: Preliminary Datasheet Specifications in this document are tentative and subject to change. R8C/38T-A Group RENESAS MCU 1. R01DS0081EJ0001 Rev.0.01 Feb 23, 2011 Overview 1.1 Features The R8C/38T-A Group single-chip microcontrollers MCUs incorporate the R8C CPU core, which provides


    Original
    R8C/38T-A R01DS0081EJ0001 R8C/38TA 06B2D 0029E 000E8H 002C1H 0028b 0027AH 0025DH 00285H 06B13 PDF

    06B2D

    Abstract: p9530 0023AH 0025DH 00285H
    Text: Datasheet R8C/38T-A Group RENESAS MCU 1. R01DS0081EJ0100 Rev.1.00 Dec 09, 2011 Overview 1.1 Features The R8C/38T-A Group of single-chip microcontrollers MCUs incorporates the R8C CPU core, which provides sophisticated instructions for a high level of efficiency. With 1 Mbyte of address space, the CPU core is capable of


    Original
    R8C/38T-A R01DS0081EJ0100 R8C/38TA 06B2D p9530 0023AH 0025DH 00285H PDF

    R5F21368snfp

    Abstract: R5F21368 r5f2136csnfp 0025DH 00285H
    Text: Preliminary Datasheet Specifications in this document are tentative and subject to change. R8C/36T-A Group RENESAS MCU 1. R01DS0055EJ0001 Rev.0.01 Jan 28, 2011 Overview 1.1 Features The R8C/36T-A Group single-chip microcontrollers MCUs incorporate the R8C CPU core, which provides


    Original
    R8C/36T-A R01DS0055EJ0001 R8C/36TA R5F21368snfp R5F21368 r5f2136csnfp 0025DH 00285H PDF

    M66253FP

    Abstract: No abstract text available
    Text: bSH^öES 0024b30 433 BSHIT1 5K BYTE X 2 FIFO MEMORY I SEMICONDUCTOR TWO BUILT-IN 5K BYTE FIFO MEMORY CIRCUITS HIGH-SPEED FIFO MEMORY SUITABLE FOR DIGITAL PLAIN-M PER COPIERS Ne w s M66253FP The M 66253FP is designed to operate at higher speeds than the conventional


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    0024b30 M66253FP 66253FP 45WmtnttdtfrSSOP1 5120x8 M66253FP PDF

    Transistor AC 187

    Abstract: AC 187 npn transistor TO 1 187 transistor npn
    Text: • Philips Semiconductors bb53T31 0024bfll 175 HIAPX N AMER PHILIPS/DISCRETE Product specification b?E ]>' NPN 1 GHz wideband transistor BF747 PINNING FEATURES • Stable oscillator operation PIN DESCRIPTION Code: E15 • High current gain • Good thermal stability.


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    bb53T31 0024bfll BF747 Transistor AC 187 AC 187 npn transistor TO 1 187 transistor npn PDF

    transistor T43

    Abstract: No abstract text available
    Text: Philips Semiconductors bbSS'Ol 0024b4fl T43 H A P X N AUER PHILIPS/DISCRETE NPN 1 GHz wideband transistor DESCRIPTION Preliminary specification fc,7E D BF547W PINNING Silicon NPN transistor in a plastic SOT323 S-mini envelope. It is primarily intended as a mixer,


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    0024b4fl BF547W OT323 BF547W BF547. MBC870 OT323. transistor T43 PDF

    MSM66101

    Abstract: MSM66G101VS
    Text: O K I Semiconductor MSM66101 OLMS-66K Series 16-Bit Microcontroller GENERAL DESCRIPTION Tlic MSM66I01 is a high performance microcontroller that em p loys OKI original nX -8/lU 0 CPU core. This chip consists o f a 16-bit ALU, 12K bytes of m ask program ROM, 384 bytes of data RAM,


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    MSM66101 OLMS-66K 16-Bit MSMWSI01 nX-8/100 10-bit DD245M1 MSM66101 MSM66G101VS PDF

    M7707

    Abstract: rd201 PLD-10 imv D6-11 BV 726 C 1 Converter w5753 fd187 sGCT function PR 161A RD202
    Text: O K I Semiconductor MSM7707 Baseband integration LSI device for PHS GENERAL DESCRIPTION The MSM7707 is an LSI device with an ADPCM CODEC function, jt/4 shift QPSK modulation/ demodulation function and a TDMA-TDD function required for PHS Personal Handy phone


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    MSM7707 MSM7707 32kbps) Hz/12 b724240 0D257 TQFP100-P-1414-0 M7707 rd201 PLD-10 imv D6-11 BV 726 C 1 Converter w5753 fd187 sGCT function PR 161A RD202 PDF

    MSM5117405

    Abstract: MSM5117405B
    Text: O K I Semiconductor MSM5 1 17405B_ E2G0039-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117405B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117405B achieves high integration, high-speed operation, and low-power


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    E2G0039-17-41 MSM5117405B_ 304-Word MSM5117405B 26/24-pin MSM5117405 PDF

    Untitled

    Abstract: No abstract text available
    Text: For Immediate Assistance, Contact Your Local Salesperson esssar OPA64Q Wideband Voltage Feedback OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • • • • • • • COMMUNICATIONS • MEDICAL IMAGING • TEST EQUIPMENT UNITY-GAIN BANDWIDTH: 1.3GHz UNITY-GAIN STABLE


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    OPA64Q -75dBc 10MHz OPA640 MIL-STD-883. 002M703 OPA640> 17313L5 00247G4 PDF

    Untitled

    Abstract: No abstract text available
    Text: OPA623 B U R R - B R O W N AVAILABLE IN DIE Wide Bandwidth, Current-Feedback OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • BANDWIDTH: 350MHz, 2.8Vp-p HIGH OUTPUT CURRENT: ±70mA SLEW RATE: 2100V/ns, 5Vp-p DIFFERENTIAL GAIN/PHASE: 0.12%/0.05°


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    OPA623 350MHz, 100V/ns, OPA623 AMPLIFIERS23 10ns/div 17313b5 0024bb3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Or, Call Customer Service at 1-8B0-548-S132 USA f l/ i/ y j B U R R -B R O W N i OPA628 OPA628 FEATURES APPLICATIONS • • • • • BROADCAST QUALITY VIDEO • • • • • EXCELLENT DIFFERENTIAL GAIN: 0.015% EXCELLENT DIFFERENTIAL PHASE: 0.015°


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    1-8B0-548-S132 OPA628 60dBm 150MHz 30MHz OPA628 150i2 ADC614 PDF

    Untitled

    Abstract: No abstract text available
    Text: KSA643 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • Complement to KSD261 • Collector Dissipation Pc =500mW ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC)


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    KSA643 KSD261 500mW Emitt350/ 0024b4b PDF

    5962-9310504QXA

    Abstract: MG80486DX-25 mg80486DX-33 MG80486DX33 59629310506QXA MG80486 80486dx33 TA80486DX266 80486DX-25 5962-9310505QXA
    Text: REVISIONS LTR DESCRIPTION Add devices 03, 04. throughout. DATE YR-MO-DA Editorial changes Add devices 05, 06, 07, 08. throughout. Editorial changes Add device types 09 and 10. Update boilerplate. APPROVED 94-03-23 Monica L. Poelking 96-03-28 Monica L. Poelking


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    TD0M70Ã 00E4fc 5962-9310504QXA MG80486DX-25 mg80486DX-33 MG80486DX33 59629310506QXA MG80486 80486dx33 TA80486DX266 80486DX-25 5962-9310505QXA PDF

    Untitled

    Abstract: No abstract text available
    Text: • b b S a i a i QQS4h?3 QTT » A P X N AMER PHILIPS/DISCRETE B F720 B F722 b?E » SILICON EPITAXIAL TRANSISTORS NPN transistors in a microminiature plastic envelope intended for class-B video output stages in colour television receivers, and general purpose high voltage circuits.


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    BF721 BF723 BF720 BF722 bbS3T31 0024b75 PDF

    Untitled

    Abstract: No abstract text available
    Text: • £.b53531 002MLi21 ?TD H A P X N AUER PHILIPS/DISCRETE BF510 to 513 b?E D J V N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended fo r applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special


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    b53531 002MLi21 BF510 BF510) BF511) BF512) BF513) bb53531 D02MbE4 PDF

    BF550

    Abstract: transistor marking code 325 0024-B
    Text: • bbSBTBi □ □ S 4 b in aaT m a p x N AUER PHILIPS/DISCRETE BF550 b7E D SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor, in a microminiature plastic envelope, intended for applications in thick and thin-film circuits. This transistor is primarily intended for use in i.f. detection applications.


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    24LMC] BF550 OT-23 BF550 transistor marking code 325 0024-B PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5 116 4 0 0 B_ E2G0033-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116400B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5116400B achieves high integration, high-speed operation, and low-power


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    E2G0033-17-41 304-Word MSM5116400B /24-pin cycles/64 PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5 1 17405B_ E2G0039-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117405B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117405B achieves high integration, high-speed operation, and low-power


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    17405B_ E2G0039-17-41 304-Word MSM5117405B /24-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5 1 17400B_ E2G0035-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117400B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117400B achieves high integration, high-speed operation, and low-power


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    17400B_ E2G0035-17-41 304-Word MSM5117400B /24-pin PDF

    KSR1004

    Abstract: KSR2004
    Text: KSR1004 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ia s R e s is to r B u ilt In • Switching circuit, Inverter. Interface circuit Driver circuit • Built in bias Resistor(Ri=47KÍÍ, R¡ = 47KÍ2) • Complement to KSR2004 TO-92 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)


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    KSR1004 47Kil, KSR2004 10fiA, KSR1004 KSR2004 PDF

    KSA708

    Abstract: KSC1008
    Text: KSA708 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER TO-92 MEDIUM SPEED SWITCHING • Complement to KSC1008 • Collector-Base Voltage VCBo=-80V • Collector Dissipation Pc =800mW ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Voltage


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    KSA708 KSC1008 800mW -100f QQ24b4à Sbm42 KSA708 KSC1008 PDF