stk 490 110
Abstract: stk 490 310 stk 490 070 4830A k4013 Transistor y2n stk 490 040 stk*470 090 stk 470 070 STK 290 010
Text: Ordering number : EN4830A Thick Film Hybrid 1C No.4830A S TK 400-020 3-Channel AF Power Amplifier Split Power Supply ( 1 5 W + 1 5 W + 1 5 W min, THD = 0.4 %) Overview Package Dimensions Now, thick-film audio power amplifier ICs are available with pin-com patibility to permit a single PCB to be
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EN4830A
STK400-020
0Cllb57fl
stk 490 110
stk 490 310
stk 490 070
4830A
k4013
Transistor y2n
stk 490 040
stk*470 090
stk 470 070
STK 290 010
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet July 1995 m A T& T Microelectronics DSP1605 Digital Signal Processor 1 Features 2 Description • For 5 V operation: — 25 ns instruction cycle time 40 MIPS — 30 ns instruction cycle time (33 MIPS) ■ For 3.3 V operation: — 31.25 ns instruction cycle time (32 MIPS)
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DSP1605
16-bit
36-bit
005002b
001bb5b
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E D • 7TL,4m2 DDlbSSb TT3 « S M C K KM424C257 CMOS VIDEO RAM 256K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 256K x 4 bits RAM port 512 x 4 bits SAM port * Perform ance The Samsung K M 4 2 4 C 2 5 7 is a CMOS 2 5 6 K X 4 bit Dual
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KM424C257
110ns
130ns
150ns
28-PIN
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intel 4040
Abstract: DSP1605 5-4001 DB3C intel 4008 te 4017 tl 4013 540T2 motorola XT 1606 RM RSTB14
Text: Preliminary Data Sheet July 1995 £ 3 A TgT Microelectronics DSP1605 Digital Signal Processor • 1 Features 2 Description ■ For 5 V operation: — 25 ns instruction cycle time 40 MIPS — 30 ns instruction cycle time (33 MIPS) ■ For 3.3 V operation:
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16-bit
36-bit
intel 4040
DSP1605
5-4001
DB3C
intel 4008
te 4017
tl 4013
540T2
motorola XT 1606 RM
RSTB14
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DIGITAL GATE EMULATOR USING 8085
Abstract: 8086 microprocessor book by A K RAY 180 nm CMOS standard cell library AMI IC1732 DL021 M91C360 ami 0.6 micron 3682D ami equivalent gates ic/TDA7388 equivalent
Text: Library Characteristics il A M I AMERICAN MICROSYSTEMS, INC. L ib ra ry Characteristics AMI6G 0.6 micron CMOS Gate Array AMI6Gx Gate Array Family Overview U S A B LE G ATES1 PART NUM B ER2 B O N D PAD S I/O C E L L S 2 LM 3 LM AMI6G4 1.39 1.85 44 52 AMI6G16S
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AMI6G16S
AMI6G33S
AMI6G41S
AMI6G70S
AMI6G106S
AMI6G150S
AMI6G202S
AMI6G333
AMI6G471
AMI6G603
DIGITAL GATE EMULATOR USING 8085
8086 microprocessor book by A K RAY
180 nm CMOS standard cell library AMI
IC1732
DL021
M91C360
ami 0.6 micron
3682D
ami equivalent gates
ic/TDA7388 equivalent
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lh64256
Abstract: LH64256BD70 CMOS Dynamic RAM 1M x 1
Text: LH64256B CMOS 1M 256K x 4 Dynamic RAM FUNCTION DESCRIPTION • 262,144 words x 4 bit The LH64256B is a 262,144 word x 4-bit dynamic RAM which allows fast page mode access. The LH64256B is fabricated on SHARP’S advanced CMOS double-level polysilicon gate technology. With its input
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LH64256B
20-pin,
300-mil
26-pin,
400-mil
20zip-2
lh64256
LH64256BD70
CMOS Dynamic RAM 1M x 1
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2SD1872
Abstract: darlington complementary 120v 2SB1252
Text: Power T ransistors 2SB1252 2SB1252 Silicon PNP Epitaxial Planar Darlington Type Package Dimensions Power Amplifier Complementary Pair with 2SD1872 • Features U n it : i 4.4 max. 10 .2 m ax. 5.7max. 2 .9 m a x . • O p tim u m fo r 35W hi-fi o u tp u t
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2SB1252
2SD1872
001b27Ã
2SD1872
darlington complementary 120v
2SB1252
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