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    0011BB Price and Stock

    Taoglas Antenna Solutions TMJ0011BBNL

    CONN JACK 1PORT 100 BASE-T
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    DigiKey TMJ0011BBNL Tray 1,955 1
    • 1 $6.38
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    • 100 $5.675
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    Mouser Electronics TMJ0011BBNL 1,000
    • 1 $6.38
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    • 100 $5.67
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    Master Electronics TMJ0011BBNL
    • 1 -
    • 10 $12.6
    • 100 $12.04
    • 1000 $5.75
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    Sager TMJ0011BBNL 1
    • 1 $6.12
    • 10 $6.12
    • 100 $5.82
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    JRH Electronics 660-011BBN

    PROTECTIVE COVER
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    DigiKey 660-011BBN Bulk 1
    • 1 $257.61
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    Siemens 3TG10011BB4

    CONTACTOR,TAB CONNECTOR,3NO+1NC,
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    DigiKey 3TG10011BB4 Box 1
    • 1 $236.96
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    Mouser Electronics 3TG10011BB4
    • 1 $195.27
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    JRH Electronics 660-011BBF3-06

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    DigiKey 660-011BBF3-06 Bulk 1
    • 1 $337.68
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    VPG Transducers Y5076V0011BB0L

    VHD200 1K/4K B B
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    DigiKey Y5076V0011BB0L Bulk 25
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    Avnet Americas Y5076V0011BB0L Bulk 25
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    0011BB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    000-3FF

    Abstract: MD1060
    Text: MD1060 1. General Description This ROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed and smaller size with the low u power 4 types of oscillator can be selected by programming option: consump-tion and high noise immunity. On chip


    Original     		PDF MD1060 000-3FF MD1060

    SEIWG-005

    Abstract: 1200VM vhf antenna mtbf SEIWG-005A LEMO WIRELESS BASE STATION STAR1200VM transceiver fsk baud carrier uhf base station RF front end
    Text: STAR 1200VM Specification STAR 1200VM Base Station Specification Revision 2.7 November 13, 1997 Nova Engineering, Inc. 5 Circle Freeway Drive Cincinnati, Ohio 45246 Phone: 513-860-3456 Fax: 513-860-3535 www.nova-eng.com STAR 1200VM Specification 1 . Introduction


    Original     		PDF 1200VM 1200VM SEIWG-005A, 0011bbbb, 9600/N/8/1, RS-232 SEIWG-005 vhf antenna mtbf SEIWG-005A LEMO WIRELESS BASE STATION STAR1200VM transceiver fsk baud carrier uhf base station RF front end

    200H

    Abstract: MDT10C22 PSC 10 289-M
    Text: MDT10C22 XTAL－Standard crystal oscillator 1. General Description HFXT－High frequency crystal oscillator This ROM-Based 8-bit micro-controller uses a fully u 4 oscillator start-up time can be selected by static CMOS design technology to achieve high programming option:


    Original     		PDF MDT10C22 and80 200H MDT10C22 PSC 10 289-M

    MDT10P72

    Abstract: No abstract text available
    Text: MDT10P72 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static u CMOS technology process to achieve higher speed and -5 analog inputs multiplexed into one A/D smaller size with the low power consumption and high noise


    Original     		PDF MDT10P72 16-bit MDT10P72

    mdt1030

    Abstract: 200H 400H TH156
    Text: MDT1030 1. General Description This ROM-Based 8-bit micro-controller uses a fully static CMOS design technology combines higher speed and smaller size with the low power and high noise immunity of CMOS. On chip memory system includes 2.0 K bytes of ROM, and 80 bytes of static RAM.


    Original     		PDF MDT1030 12-bit mdt1030 200H 400H TH156

    910U

    Abstract: ldr 6k MDT10P651
    Text: MDT10P651 1. General Description -CCP1, CCP2, SCM, USAR, USAT, PCM u TMR0 : 8-bit real time clock/counter This EPROM-Based 8-bit micro-controller uses a fully static TMR1 : 16-bit real time clock/count CMOS technology process to achieve higher speed and TMR2 : 8-bit clock/counter internal


    Original     		PDF MDT10P651 16-bit 910U ldr 6k MDT10P651

    basic stamp BS2

    Abstract: 10 switch coded 18 pin ic 1101BBB 18 PIN IC
    Text: ✁ ✂ ✄ ☎ ✆ ✝ ✞ ✟ ✠ ✡ ☛ ☞ ☞ ☞ 1998 by AWC, All Rights Reserved AWC 310 Ivy Glen Ct. League City, TX 77573 [email protected] http://www.al-williams.com/awc/awce.htm v1.1 25 Jan 99 ☞ ✌ ✍ ✎ ✏ ✑ ✒ ✏ ✓ ✔ ✕


    Original     		PDF 10Mhz basic stamp BS2 10 switch coded 18 pin ic 1101BBB 18 PIN IC

    MDT2010

    Abstract: No abstract text available
    Text: MDT2010 IB 1. General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS design technology combines higher speeds and smaller size with the low power and high noise immunity of CMOS. On chip memory system includes 1.0 K(for MDT2010) bytes of ROM, and 32 bytes of


    Original     		PDF MDT2010 MDT2010) MDT2010

    k/833 pin

    Abstract: 200H 400H MDT1020
    Text: MDT1020 u 4 oscillator start-up time : 150 µs, 20 ms, 40 ms, 80 ms 1. General Description This ROM-Based 8-bit micro-controller uses a fully static CMOS design technology combines higher speed and smaller size with the low power and high noise immunity of CMOS.


    Original     		PDF MDT1020 14-bit k/833 pin 200H 400H MDT1020

    MDT10F630

    Abstract: MDT10F630P11 MDT10F630P13 MDT10F630S11
    Text: MDT10F630 automotive 1. General Description to low transmitters/receivers, power pointing remote devices, and This 8-bit Micro-controller uses a fully static telecommunications processors, such as Remote CMOS technology to achieve high speed, small controller,


    Original     		PDF MDT10F630 MDT10F630P11 MDT10F630S11 MDT10F630 Temperature25 MDT10F630P11 MDT10F630P13 MDT10F630S11

    MDT10P432

    Abstract: S31-S38 mdt*10P432
    Text: MDT10P432 1. 概述 上电复位 内部 RC 432K, 440K, 455K, 480KHz 在 OPTION 这个 8 位基本内存控制器是一个集高速体积小、低功 里选择 耗和抗高噪声一体的静态 CMOS 芯片。它包括 512 个字 系统时钟: 455KHz 晶振 OSC1 电容 50P; OSC2


    Original     		PDF MDT10P432 480KHz 455KHz PA0-78 Fosc/12 MDT10P432P11 MDT10P432S11 MDT10P432 S31-S38 mdt*10P432

    MDT2010

    Abstract: 3.0 N1
    Text: MDT2010 JE 1. General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS design technology combines higher speeds and smaller size with the low power and high noise immunity of CMOS. On chip memory system includes 1.0 K(for MDT2010) bytes of ROM, and 32 bytes of


    Original     		PDF MDT2010 MDT2010) MDT2010 3.0 N1

    mdt10p621

    Abstract: No abstract text available
    Text: MDT10P621N AB 1. General Description -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static TMR0 : 8-bit real time clock/counter CMOS technology process to achieve higher speed and TMR1 : 16-bit real time clock/count smaller size with the low power consumption and high


    Original     		PDF MDT10P621N 16-bit oMDT10P621N 4Kx14 MDT10P621N) 192X8 mdt10p621

    MDT10P621

    Abstract: 20MHZ pa 4010 12OSC1
    Text: MDT10P621 1. 概述 －TMR0，TMR1，TMR2 时钟 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计，集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 4K 字节 EPROM 和 192 字节静态 RAM。 －PORTB＜7：4＞电平变化中断


    Original     		PDF MDT10P621 PORTB74 20MHZ 200ns MDT10P 192X8 MDT10P621 20MHZ pa 4010 12OSC1

    Untitled

    Abstract: No abstract text available
    Text: MDT10P72N AB 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static A/D converter module: CMOS technology process to achieve higher speed and -5 analog inputs multiplexed into one A/D smaller size with the low power consumption and high


    Original     		PDF MDT10P72N 16-bit 2Kx14 MDT10P72N) 128X8

    12OSC1

    Abstract: MDT10P72 XT 4MHZ 20MHZ
    Text: MDT10P72 1. 概述 －TMR0，TMR1，TMR2 时钟 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计，集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 2K 字节 EPROM 和 128 字节静态 RAM。 －A／D 转换完成


    Original     		PDF MDT10P72 PORTB74 20MHZ 200ns 128X8 12OSC1 MDT10P72 XT 4MHZ 20MHZ

    cf 455

    Abstract: MDT10P23
    Text: MDT10P23 CF 1. General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS design technology to achieve high speed, small size, low power and high noise immunity. On chip memory includes 2K words EPROM and80 bytes static RAM. Four comparator inputs with external Vref


    Original     		PDF MDT10P23 and80 14-bit MDT10P23 cf 455

    MDT10P62

    Abstract: MDT10P
    Text: MDT10P62 BB 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed TMR0 : 8-bit real time clock/counter and smaller size with the low power consumption and


    Original     		PDF MDT10P62 16-bit MDT10P 128X8

    MDT10P65

    Abstract: MDT10P65A1Q MDT10P65A2Q MDT10P65SD42 RT 8284 N pd711
    Text: MDT10P65 1. General Description This OTP-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed and smaller size with the low power consumption and high noise immunity. On chip memory includes 4K words of EPROM, and 192 bytes of static RAM.


    Original     		PDF MDT10P65 Temperature25 MDT10P65 MDT10P65A1Q MDT10P65A2Q MDT10P65SD42 RT 8284 N pd711

    MDT10P05

    Abstract: IC TTL 4700
    Text: MDT10P05 BG 1.概述 这个 8 位基本内存控制器是一个集高速体 积小、低功耗和抗高噪声一体的静态 CMOS 芯片。它包括 0.5K ROM 和 32 字节静态 RAM。 四种可选振荡器起始定时器定时时间：150 s，20ms，40ms，80ms


    Original     		PDF MDT10P05 s20ms40ms80ms MDT10P05 20MHz 200ns IC TTL 4700

    20MHZ

    Abstract: 100nnn
    Text: MDT10P621N AB 1. 概述 －TMR0，TMR1，TMR2 时钟 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计，集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 4K 字节 EPROM 和 192 字节静态 RAM。 －PORTB＜7：4＞电平变化中断


    Original     		PDF MDT10P621N PORTB74 MDT10P621N 20MHZ 200ns 4Kx14 MDT10P621N) 192X8 20MHZ 100nnn

    LCD09

    Abstract: MDT11P0122LQ11 R107H r11ah LCD05 DL05 MDT11P0122 LCD02 R89H DL050
    Text: MDT11P0122 1. 概述 这个 8 位 EPROM 微控制器是由完全静态 CMOS 技术设计，集高速体积小、低功 耗和高抗干扰性一体的芯片。内存包括 4K MDT11P0122 的应用范围从发动机控制器， 高速自动电机（电车）到低电源遥控发射、接


    Original     		PDF MDT11P0122 PG6/SEG26 PG5/SEG25 LCD09 MDT11P0122LQ11 R107H r11ah LCD05 DL05 MDT11P0122 LCD02 R89H DL050

    MDT10P72

    Abstract: DC MOTOR SPEED CONTROLLER
    Text: MDT10P72 BB 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static A/D converter module: CMOS technology process to achieve higher speed and -5 analog inputs multiplexed into one A/D smaller size with the low power consumption and high


    Original     		PDF MDT10P72 16-bit 128X8 DC MOTOR SPEED CONTROLLER

    Untitled

    Abstract: No abstract text available
    Text: 1,2 , 4 MEG X 32 DRAM SODIMMs MICRON I TECHNOLOGY INC SMALL-OUTLINE DRAM MODULE MT2LDT132H X (S) MT4LDT232H (X) (S) MT8LDT432H(X)(S) FEATURES • JEDEC- and industry-standard pinout in a 72-pin, small-outline, dual in-line memory module (DIMM) • 4MB (1 Meg x 32), 8MB (2 Meg x 32),


    OCR Scan     		PDF MT2LDT132H MT4LDT232H MT8LDT432H 72-pin, 024-cycle 048-cycle 128ms