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    Untitled

    Abstract: No abstract text available
    Text: 2SJ594 P- Channel Silicon MOS FET DC/DC Converter Use TENTATIVE Features and Applications • Low ON-state resistance. • Ultrahigh-speed switching. • 4V drive. Absolute Maximum Ratings / Ta=25°C unit Drain to Source Voltage Gate to Source Voltage Drain Current DC


    Original     		PDF 2SJ594 2SJ594 000905TM2fXHD

    J596

    Abstract: No abstract text available
    Text: 2SJ596 P- Channel Silicon MOS FET DC/DC Converter Use TENTATIVE Features and Applications • Low ON-state resistance. • Ultrahigh-speed switching. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current DC


    Original     		PDF 2SJ596 2SJ596 000905TM2fXHD J596

    J595

    Abstract: No abstract text available
    Text: 2SJ595 P- Channel Silicon MOS FET DC/DC Converter Use TENTATIVE Features and Applications • Low ON-state resistance. • Ultrahigh-speed switching. • 4V drive. Absolute Maximum Ratings / Ta=25°C unit Drain to Source Voltage Gate to Source Voltage Drain Current DC


    Original     		PDF 2SJ595 2SJ595 000905TM2fXHD J595