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    000320B Search Results

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    pmd20k200

    Abstract: diode OA-70 20K150
    Text: SEflTECH CORP 56E D • fiia H B I 000320b 204 150 WATT 14 AMP CONTINUOUS, 20 AMP PEAK ABSOLUTE MAXIMUM RATINGS PARAM ETER SYM BO L Collector Emitter Voltage PMD 20K120 PMD 20K150 PMD 20K200 Collector Base Voltage PMD 20K120 PMD 20K150 PMD 20K200 FEATURES


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    PDF 000320b 20K120 20K150 20K200 pmd20k200 diode OA-70

    Til 322A

    Abstract: FFD11 280/Til 322A
    Text: S A R A Chipset Technical Manual Segmentation SARA Hardware Description Chapter 3. Hardware Description 3.1 Segmentation SARA Hardware Description 3.1.1 Segmentation SARA Internal Block Description Figure 3-1 shows a block diagram of the Segmentation S A R A chip.


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    PDF 3-27B. 3-28B. Til 322A FFD11 280/Til 322A

    IL43 marking

    Abstract: mb 3221 IL43 bit 3105 BTS 308 0314E irf 345h 2tu marking code BTS 716 G cj-cc
    Text: P r e l im in a r y I n f o r m a t io n PMC PMC-Sierra, Inc. P M 63 44 EQUAD QUAD E1 FRAMER ISSUE 3 FEA TU RES • Integrates four full-featured E1 framers and transmitters in a single device for terminating duplex E1 signals. • Software and functionally compatible with the PM6341 E1XC Single E1


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    PDF PM6344 PM6341 PM4344 IL43 marking mb 3221 IL43 bit 3105 BTS 308 0314E irf 345h 2tu marking code BTS 716 G cj-cc

    D3254

    Abstract: No abstract text available
    Text: QS7024A PRELIMINARY High-Speed CMOS 4K x 16 Asynchronous Dual-Port RAM Q FEATURES QS7024A DESCRIPTION High-speed asynchronous dual-port architecture Access times from either port, 20/25/35/55 ns Industry standard pin-out Independent port access and control


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    PDF QS7024A QS7024A 100-pin 84-pin 64Kbit 32-bit MDSF-00024-00 D3254

    SO-8 LTLS e3

    Abstract: ltls e3 IC LTLS E3
    Text: M O S E L V TTE U C PRELIMINARY V52C8256 MULTIPORT VIDEO RAM WITH 256K X 8 DRAM AND 5 1 2 X 8 SAM HIGH PERFORMANCE V52C8256 Max. RAS Access Tim e, tRAC 60 70 80 60 ns 70 ns 80 ns Max. CA S Access Time, (tcAc) 15 ns 20 ns 25 ns Max. Column Address Access Tim e, ( t ^ )


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    PDF V52C8256 V52C8256 V52CB256 SO-8 LTLS e3 ltls e3 IC LTLS E3

    71c1000

    Abstract: GA032 trw 1014 RAS 0510 GM71C1000 GM71C1000-80 GM71C1000-12
    Text: GM71C1000 WORDS X 1 BIT CMOS DYNAMIC RAM Description Pin Configuration The G M 71C1000 is the new generation dynamic RAM QDD3202 1048576 1 M G ST PRELIMINARY SPECIFICATION REV. 0 ^ 18 PLASTIC DIP TOP VIEW organized 1048576 x 1 Bit, GM 71C1000 has realized


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    PDF GM71C1000 71C1000 402A7S7 GA032 trw 1014 RAS 0510 GM71C1000 GM71C1000-80 GM71C1000-12

    Untitled

    Abstract: No abstract text available
    Text: '> 3 7 v o w Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS D5SC4M Case : ITO-220 40V 5A • T j 15 0 t: • P rrsm •7 J L Æ -J b K •S R S S •D C /D C □ » { - ; ? •mm. y - A , oa«§§ •aa, m x-sjim s • ü Ê tè ü RATINGS • Îê fc fU ^ Æ fê


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    PDF ITO-220 000320b

    Untitled

    Abstract: No abstract text available
    Text: WS57C45 HIGH-SPEED 2K x 8 REGISTERED CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time • DESC SMD Nos. 5962-88735/5962-87529 — 25 ns Setup — 12 ns Clock to Output • Pin Compatible with AM27S45 and CY7C245 • Immune to Latch-Up • Low Power Consumption


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    PDF WS57C45 AM27S45 CY7C245 WS57C45 CY7C245. S57C45-35T S57C45-35TMB* MIL-STD-883C S57C45-45KMB*