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    Text: FTD1015 P- Channel Silicon MOS FET Load S/W Use TENTATIVE Features • Low ON-state resistance. • 4V drive. • Mount height of 1.1mm. • Complex Type enabling high density mount Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage


    Original     		PDF FTD1015 --10V, --10V 000119TM2fXHD