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    0.18-UM CMOS TECHNOLOGY LENGTH AND WIDTH Search Results

    0.18-UM CMOS TECHNOLOGY LENGTH AND WIDTH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4162F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4206F Toshiba Electronic Devices & Storage Corporation Intelligent power device 500V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation

    0.18-UM CMOS TECHNOLOGY LENGTH AND WIDTH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Highly integrated CMOS RF SPDT switch with ESD and unit cell optimisation in MCM

    Abstract: TPC2A Alcatel-Lucent
    Text: Highly integrated CMOS RF SPDT switch with ESD and unit cell optimisation in MCM A.Y.-K. Chen Presented is the performance of a highly integrated RF single-pole double-throw SPDT switch fabricated in a 0.18 µm bulk CMOS process and housed in a low-cost laminated multi-chip module (MCML) package. A switch controller is also implemented and consumes


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    mlc nand flash lsb msb

    Abstract: ISO7816 ISO7816-3 "saturation processing" "vector instructions" saturation seiko epson RAM IC MEMORY CARD
    Text: S1C33A01 CMOS 32-bit Application Specific Controller z z z z z z z z z z z z z z z 32-bit RISC CPU Core EPSON S1C33 PE core (Max. 90 MHz operation) 1KB Instruction Cache and 1KB Data Cache 100KB RAM (including cache and battery backup RAM) Programmable Operating Clock using PLL


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    PDF S1C33A01 32-bit S1C33 100KB 64-bit 24-bit 16-ch. 8/16-bit mlc nand flash lsb msb ISO7816 ISO7816-3 "saturation processing" "vector instructions" saturation seiko epson RAM IC MEMORY CARD

    XH018

    Abstract: hall sensor 41 hall effect flow sensor 0.18-um CMOS technology characteristics X-Fab primitive sensor signal hall sensor CMOS Process Family micron cmos sensor connection 3 terminal hall effect sensor
    Text: 0.18 µm CMOS Process Family XH018 - Hall Sensor MIXED-SIGNAL FOUNDRY EXPERTS Embedded HALL Effect Sensor IP in 0.18 Micron Technology Description The XH018 Hall Sensor is X-FAB’s specialized readyto-use Hall effect sensor IP, based on the 0.18 m HV CMOS Processes.


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    PDF XH018 hall sensor 41 hall effect flow sensor 0.18-um CMOS technology characteristics X-Fab primitive sensor signal hall sensor CMOS Process Family micron cmos sensor connection 3 terminal hall effect sensor

    hv2300

    Abstract: AXTO bsim3 model for 0.18 micron technology for hspice adc04 x-fabs 0.8um nmos bsim3 model parameters bsim3 model analog devices transistor tutorials analogue digital converter instrumentation delta application instrumentation projects
    Text: 0.8 m CMOS Process CX08 MIXED-SIGNAL FOUNDRY EXPERTS 0.8 Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The CX08 Series is X-FAB‘s 0.8 Micron Modular Mixed Signal Technology. Main target applications are standard cell, semi-custom and full custom


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    iso7816 USB

    Abstract: seiko 320 240 DA16 ISO7816 ISO7816-3
    Text: S1C33E07 CMOS 32-bit Application Specific Controller 32-bit RISC CPU-Core Optimized for SoC EPSON S1C33 PE Built-in 8KB RAM SDRAM Controller with Burst Control Generic DMA Controller (HSDMA/IDMA) 6-ch. PWM Control Timer/Counter Supports Several Interfaces


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    PDF S1C33E07 32-bit S1C33 S1C33E07 iso7816 USB seiko 320 240 DA16 ISO7816 ISO7816-3

    rpp1k1

    Abstract: No abstract text available
    Text: 0.18 m Process Family: XT018 0.18 Micron HV SOI CMOS Technology DESCRIPTION The XT018 series is X-FAB’s 0.18 micron Modular High-voltage SOI CMOS Technology. Based on SOI wafers and the industrial standard single poly with up to six metal layers 0.18-micron drawn gate


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    PDF XT018 XT018 18-micron rpp1k1

    s1c33l26

    Abstract: Picture-in-Picture IC seiko 320 240 color space look-up table
    Text: S1C33L26 CMOS 32-bit Application Specific Controller ● 32-bit RISC CPU core Epson S1C33 PE core (Max. 60 MHz operation) ●34KB RAM (including cache and VRAM) ● Programmable operating clock using PLL (Division ratio: 1/1~1/10, Multiplication ratio: x1~x16)


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    PDF S1C33L26 32-bit S1C33 x1x16) 16M-color) 16M-color s1c33l26 Picture-in-Picture IC seiko 320 240 color space look-up table

    S3C2412

    Abstract: uart protocol touch screen S3C2410A Samsung s3c2412 0.18-um CMOS technology length and width samsung NAND Flash DIE AMBA AHB memory controller 272-FBGA AMBA AHB bus arbiter nand fifo
    Text: Product Technical Brief S3C2412 Rev 2.2, Apr. 2006 Overview SAMSUNG's S3C2412 is a Derivative product of S3C2410A. S3C2412 is designed to provide hand-held devices and general applications with cost-effective, low-power, and high-performance micro-controller


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    PDF S3C2412 S3C2412 S3C2410A. S3C2410A ARM926EJ 64-Byte 8-/16-bit 200MHz, 266MHz uart protocol touch screen Samsung s3c2412 0.18-um CMOS technology length and width samsung NAND Flash DIE AMBA AHB memory controller 272-FBGA AMBA AHB bus arbiter nand fifo

    486DX-CPU

    Abstract: tamagawa 486DX transistors mos retrograde well 0.35
    Text: MOS Scaling: Transistor Challenges for the 21st Century Scott Thompson, Portland Technology Development, Intel Corp. Paul Packan, Technology Computer Aided Design, Intel Corp. Mark Bohr, Portland Technology Development, Intel Corp. Index words: SDE, transistor, scaling


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    MOB4 nxp

    Abstract: No abstract text available
    Text: P5Cx009/P5Cx072 Secure triple, dual and contact PKI smart card controller Rev. 01 — 5 February 2010 181610 Product short data sheet PUBLIC 1. General description 1.1 SmartMX CMOS18 features The CMOS18 SmartMX family members are a modular set of devices featuring:


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    PDF P5Cx009/P5Cx072 CMOS18 P5CC072 P5CT072 MOB4 nxp

    P5CC072

    Abstract: P5CD072 P5CC072 SOT266-1 P5CD009 P5CT072 Iso 7816 Flash 72 kb Eeprom 72 kb iso 7816-12 MIFARE Classic Key Diversification mifare-1 MOB4 package
    Text: P5Cx009/P5Cx072 Secure triple, dual and contact PKI smart card controller Rev. 01 — 5 February 2010 181610 Product short data sheet PUBLIC 1. General description 1.1 SmartMX CMOS18 features The CMOS18 SmartMX family members are a modular set of devices featuring:


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    PDF P5Cx009/P5Cx072 CMOS18 P5CC072 P5CT072 P5CD072 P5CC072 SOT266-1 P5CD009 Iso 7816 Flash 72 kb Eeprom 72 kb iso 7816-12 MIFARE Classic Key Diversification mifare-1 MOB4 package

    IL311ANM

    Abstract: tda8362b ILa1519B1Q iff4n60 IN1307N tda8890 IL311AN IL91214AN MC74HC123AN IL258D
    Text: SEMICONDUCTOR PRODUCTS SHORT FORM CATALOG INTEGRAL 2010-2011 INTEGRAL JSC reserves the right to make changes in device design, specifications and other information identified in this publication without notice and assumes no responsibility for the use of any device described herein.


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    TUNABLE VCO 10GHZ

    Abstract: MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT 0.18 um CMOS VCO 10GHZ oscillator 8563E spectrum analyzer
    Text: A 10GHz CMOS Distributed Voltage Controlled Oscillator1 Hui Wu and Ali Hajimiri Department of Electrical Engineering, California Institute of Technology, Pasadena, CA 91125, USA Abstract A 10 GHz CMOS distributed voltage controlled oscillator DVCO is designed in a 0.35µm BiCMOS process technology using only CMOS transistors. The oscillator achieves a


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    PDF 10GHz TUNABLE VCO 10GHZ MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT 0.18 um CMOS VCO 10GHZ oscillator 8563E spectrum analyzer

    s3c2413

    Abstract: S3C2410A s3c2410 ARM926EJ ARM926EJ-S 0.18-um CMOS Flash technology LCD based digital alarm clock 289-FBGA Samsung 320x240
    Text: Product Technical Brief S3C2413 Rev 2.2, Apr. 2006 Overview SAMSUNG's S3C2413 is a Derivative product of S3C2410A. S3C2413 is designed to provide hand-held devices and general applications with cost-effective, low-power, and high-performance micro-controller


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    PDF S3C2413 S3C2413 S3C2410A. S3C2410A ARM926EJ 266MHz 100/133MHz 133MHz 8-/16-bit s3c2410 ARM926EJ-S 0.18-um CMOS Flash technology LCD based digital alarm clock 289-FBGA Samsung 320x240

    seiko 320 240

    Abstract: YUV420 64K-color S1C33L19 YUV444 QVGA LCD Monochrome Sharp Color TFT LCD Module cpu interface YUV411 "saturation processing" S1C33L17
    Text: S1C33L19 CMOS 32-bit Application Specific Controller ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● 32-bit RISC CPU-Core Optimized for SoC EPSON S1C33 PE Dual AMBA Bus System for CPU and LCDC Built-in PLL (Multiplication rate: x1 to ×16) Advanced CPU Instruction Queue Buffer


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    PDF S1C33L19 32-bit S1C33 ISO7816-3) seiko 320 240 YUV420 64K-color S1C33L19 YUV444 QVGA LCD Monochrome Sharp Color TFT LCD Module cpu interface YUV411 "saturation processing" S1C33L17

    XH018

    Abstract: No abstract text available
    Text: 0.18 m Process Family: XH018 0.18 Micron Modular Analog Mixed HV Technology DESCRIPTION The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six metal layers 0.18 micron


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    PDF XH018 XH018 18-micron

    130 nm CMOS standard cell library

    Abstract: 180 nm CMOS standard cell library Synopsys 130 nm CMOS standard cell library ST C4002-1 VGC450/VGC453
    Text: V L S I Tech n o lo gy , in c . oec t a PRELIMINARY VGC450/VGC453 LIBRARY O.8-MICRON GATE A R R A Y S E R IE S FEATURES • Advanced 0.7-micron effective channel length , 0.8-micron (drawn gate length) silicon gate CMOS technology • Fully integrated with COMPASS


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    PDF VGC450/VGC453 VGC453 VGC450 130 nm CMOS standard cell library 180 nm CMOS standard cell library Synopsys 130 nm CMOS standard cell library ST C4002-1

    PT6042

    Abstract: VGC453 model values for 0.18 micron technology cmos nd02d2
    Text: V L S I TECHNOLOGY INC T3aa3M? oooaaio □ M7E D V L S I T echn o lo gy , in c . VTI ' PRELIMINARY -0 9 VGC450/VGC453 LIBRARY O.8-MICRON GATE ARRAY SERIES FEATURES • Advanced 0.7-micron effective channel length , 0.8-micron (drawn gate length) silicon gate CMOS


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    PDF VGC450/VGC453 VGC453 VGC450 PT6042 model values for 0.18 micron technology cmos nd02d2

    lm 7803

    Abstract: BT 815 transistor 32nm matching p735 AL 5052 MD8253A bsim3 model BSIM
    Text: Gate current: Modeling, AL extraction and impact on RF performance R. van Langevelde, A.J. Schölten, R. Duffy*, F.N. Cubaynes*, M.J. Knitel and D.B.M. Klaassen Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands Phone: +31-40-2742418; Fax: +31-40-2744113; E-mail: [email protected]


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    PDF B-3001 net/1999 292-IEDM lm 7803 BT 815 transistor 32nm matching p735 AL 5052 MD8253A bsim3 model BSIM

    93LC56BX

    Abstract: No abstract text available
    Text: M ic r o c h ip 93LC56A/B 2K 2.5V Microwire Serial EEPROM BLOCK DIAGRAM FEATURES • Single supply with operation down to 2.5V • Low power CMOS technology - 1 mA active current typical - 1 standby current (maximum) 256 x 8 bit organization (93LC56A)


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    PDF 93LC56A) 93LC56B) 93LC56A/B O-153 DS00049M 93LC56BX

    SOIC Package 8-Pin Surface Mount 601

    Abstract: No abstract text available
    Text: 93LC66A/B M ic r o c h ip 4K 2.5 V Microwire Serial EEPROM BLOCK DIAGRAM FEATURES • Single supply with operation down to 2.5V • Low power CMOS technology - 1 mA active current typical - 1 standby current (maximum) 512 x 8 bit organization (93LC66A)


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    PDF 93LC66A/B 93LC66A) 93LC66B) O-153 DS00049M SOIC Package 8-Pin Surface Mount 601

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet July 1996 mi c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations T7501 PCM Codec with Filters Features • Pin-selectable transmit and receive gain control ■ Pin-selectable |i-law or A-law operation ■ Latch-up free CMOS technology


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    PDF T7501 T7250 PUB43801) 27TYP 5-4413r T7501-PC T7501-EC 18-Pin,

    8 bit wallace tree multiplier verilog code

    Abstract: 16 bit wallace tree multiplier verilog code 24 bit wallace tree multiplier verilog code vhdl code for Wallace tree multiplier 8 bit multiplication vhdl code using wallace tree 4 bit multiplication vhdl code using wallace tree vhdl code Wallace tree multiplier 32 bit wallace tree multiplier verilog code LSI Logic EPBGA 4 bit wallace tree multiplier verilog code
    Text: LSI LOGIC Process Overview 0.6-Micron, 5-Volt LCB605K ASIC Products Datasheet LSI Logic’s LCB605K cell-based ASICs provide a very dense, cost-effective solution that is ideal for 5-volt system integration. Based on LSI Logic’s 0.45-micron effective channel length


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    PDF LCB605K 45-micron 8 bit wallace tree multiplier verilog code 16 bit wallace tree multiplier verilog code 24 bit wallace tree multiplier verilog code vhdl code for Wallace tree multiplier 8 bit multiplication vhdl code using wallace tree 4 bit multiplication vhdl code using wallace tree vhdl code Wallace tree multiplier 32 bit wallace tree multiplier verilog code LSI Logic EPBGA 4 bit wallace tree multiplier verilog code

    AN792

    Abstract: C281 G42-88 TC1016 MARKING GA
    Text: TC1016 M i c r o c h ip 8OmA, Tiny CMOS LDO With Shutdown Features General Description • S pa ce-S a ving 5-P in SC -70 P ackage T he T C 10 16 is a high a ccu ra cy typica lly ±0 .5 % C M O S up gra de fo r b ip o la r low d ro p o u t regulators. It is


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    PDF TC1016 SC-70 TC1016 D-81739 DS21666A-page DS21666A AN792 C281 G42-88 MARKING GA